FDN5618PD87Z - Fairchild Semiconductor Corporation

October 2000

2000 Fairchild Semiconductor Corporation FDN5618P Rev C(W)

FDN5618P

60V P-Channel Logic Level PowerTrench



 MOSFET

General Description

This 60V P-Channel MOSFET uses Fairchild’s high

voltage PowerTrench process. It has been optimized for

power management applications.

Applications

• DC-DC converters

• Load switch

• Power management

Features

• –1.25 A, –60 V. RDS(ON) = 0.170 Ω @ VGS = –10 V

DS(ON) = 0.230 Ω @ VGS = –4.5 V

• Fast switching speed

• High performance trench technology for extremely

low RDS(ON)

SuperSOT -3

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol Parameter Ratings Units

VDSS Drain-Source Voltage –60 V

VGSS Gate-Source Voltage ±20 V

IDDrain Current – Continuous (Note 1a) –1.25 A

– Pulsed –10

Maximum Power Dissipation (Note 1a) 0.5

PD(Note 1b) 0.46

TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C

Thermal Characteristics

RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W

RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

618 FDN5618P 7’’ 8mm 3000 units

FDN5618P

FDN5618P Rev C(W)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA–60 V

∆BVDSS

===∆TJ

Breakdown Voltage Temperature

Coefficient

ID = –250 µA,Referenced to 25°C–58 mV/°C

IDSS Zero Gate Voltage Drain Current VDS = –48 V, VGS = 0 V –1 µA

IGSSF Gate–Body Leakage, Forward VGS = 20V, VDS = 0 V 100 nA

IGSSR Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA

On Characteristics (Note 2)

VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA–1 –1.6 –3 V

∆VGS(th)

===∆TJ

Gate Threshold Voltage

Temperature Coefficient

ID = –250 µA,Referenced to 25°C4mV/°C

RDS(on) Static Drain–Source

On–Resistance

VGS = –10 V, ID = –1.25 A

VGS = –4.5 V, ID = –1.0 A

VGS = –10 V, ID = –3 A TJ=125°C

0.148

0.185

0.245

0.170

0.230

0.315

Ω

ID(on) On–State Drain Current VGS = –10 V, VDS = –5 V –5 A

gFS Forward Transconductance VDS = –5 V, ID = –1.25 A 4.3 S

Dynamic Characteristics

Ciss Input Capacitance 430 pF

Coss Output Capacitance 52 pF

Crss Reverse Transfer Capacitance

VDS = –30 V, V GS = 0 V,

f = 1.0 MHz

19 pF

Switching Characteristics (Note 2)

td(on) Turn–On Delay Time 6.5 13 ns

trTurn–On Rise Time 8 16 ns

td(off) Turn–Off Delay Time 16.5 30 ns

tfTurn–Off Fall Time

VDD = –30 V, ID = –1 A,

VGS = –10 V, RGEN = 6 Ω

48ns

QgTotal Gate Charge 8.6 13.8 nC

Qgs Gate–Source Charge 1.5 nC

Qgd Gate–Drain Charge

VDS = –30 V, ID = –1.25 A,

VGS = –10 V

1.3 nC

Drain–Source Diode Characteristics and Maximum Ratings

ISMaximum Continuous Drain–Source Diode Forward Current –0.42 A

VSD Drain–Source Diode Forward

Voltage

VGS = 0 V, IS = –0.42 (Note 2) –0.7 –1.2 V

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) 250°C/W when mounted on a

0.02 in2 pad of 2 oz. copper.

b) 270°C/W when mounted on a

minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width ≤=300 µs, Duty Cycle ≤=2.0

FDN5618P

FDN5618P Rev C(W)

Typical Characteristics

01234

-VDS, DRAIN-SOURCE VOLTAGE (V)

-4.5V

6.0V

-2.5V

-4.0V

-3.5V

VGS = -10V

-3.0V

0.8

1.2

1.4

1.6

1.8

2.2

012345

-ID, DRAIN CURRENT (A)

VGS = -3.0V

-4.0V

-1

-4.5V

-6.0V

-3.5V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.8

0.9

1.1

1.2

1.3

-50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

ID = -1.25A

VGS = -10V

0.1

0.2

0.3

0.4

0.5

0.6

246810

-VGS, GATE TO SOURCE VOLTAGE (V)

ID = -0.65 A

TA = 125oC

TA = 25oC

Figure 3. On-Resistance Variation

withTemperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

11.522.533.54

-VGS, GATE TO SOURCE VOLTAGE (V)

TA = 125oC25oC

VDS = - 5V

-55oC

0.0001

0.001

0.01

0.1

0 0.2 0.4 0.6 0.8 1 1.2 1.4

-VSD, BODY DIODE FORWARD VOLTAGE (V)

TA = 125oC

25oC

-55oC

VGS = 0V

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDN5618P

FDN5618P Rev C(W)

Typical Characteristics

0246810

Qg, GATE CHARGE (nC)

ID = -1.25A VDS = -20V

-40V

-30V

100

200

300

400

500

600

700

024681012

-VDS, DRAIN TO SOURCE VOLTAGE (V)

CISS

CRSS

COSS

f = 1MHz

VGS = 0 V

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

0.001

0.01

0.1

100

0.1 1 10 100

-VDS, DRAIN-SOURCE VOLTAGE (V)

-I

, DRAIN CURRENT (A

)

DC 10s

100ms

RDS(ON) LIMIT

VGS =-10V

SINGLE PULSE

RθJA = 270oC/W

TA = 25oC

10ms

1ms

0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

SINGLE PULSE

RθJA = 270°C/W

TA = 25°C

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

0.001

0.01

0.1

0.0001 0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

RθJA(t) = r(t) + RθJA

RθJA = 270 °C/W

TJ - TA = P * RθJA(t)

Duty Cycle, D = t1 / t2

P(pk)

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.

FDN5618P

SSOT-3 Packaging

Configuration: Figure 1.0

Components Leader Tape

500mm min imum or

125 empty poc kets

Tr aile r Tape

300mm min imum or

75 empty poc kets

SSOT-3 Tape Leader and Trailer

Configuration: Figure 2.0

Cover Tape

Carrier Tape

Note/Comments

Packaging Option

SSOT-3 Std Packaging Information

Standard

(no flow code) D87Z

Packaging type

Reel Size

TNR

7" Dia

TNR

13"

Qty per Reel/Tube/Bag 3,000 10,000

Box Dimension (mm) 187x107x183 343x343x64

Max qty per Box 24,000 30,000

Weight per unit (gm) 0.0097 0.0097

Weight per Reel (kg) 0.1230 0.4150

Human Read able Labe l

Human Readable Label sample

343mm x 342mm x 64mm

Intermediate box for D87Z Option

Human Read able

Label 187mm x 107mm x 183mm

Intermediate Box for Standard O ption

SSOT-3 Std Unit Orientation

3P 3P 3P 3P

Customize Label

Human Read able

Label Embossed

Car rier Tape

Antistatic Cover Tape

Packaging Description:

SSOT-3 parts are shipped in tape. The carrier tape is

made from a dissipative (carbon filled) polycarbonate

resin. The cover tape is a multilayer film (Heat Activated

Adhesive in nature) primarily composed of polyester film,

adhesive layer, sealant, and anti-static sprayed agent.

These reeled parts in standard option are shipped with

3,0 00 uni ts p er 7" or 17 7cm di amet er re el. The re els are

dark blue in color and is made of polystyrene plastic (anti-

static coated). Other option comes in 10,000 units per 13"

or 330 cm diam eter re el. T his a nd some other o pti ons are

described in the Packaging Information table.

These full reels are individually labeled and placed inside

a standard intermediate made of recyclable corrugated

bro wn paper w ith a Fai rchil d logo pri nting. One pi zza b ox

contains eight reels maximum. And these intermediate

boxes are placed inside a labeled shipping box which

co me s in di ffe re nt siz es depe nd in g on the nu mbe r of pa rts

shipped.

SuperSOTTM-3 Tape and Reel Data

August 1999, Rev. C

Dimensions are in millimeter

Pkg type

A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc

SSOT-3

(8mm)

3.15

+/-0.10 2.77

+/-0.10 8.0

+/-0.3 1.55

+/-0.05 1.125

+/-0.125 1.75

+/-0.10 6.25

min 3.50

+/-0.05 4.0

+/-0.1 4.0

+/-0.1 1.30

+/-0.10 0.228

+/-0.013 5.2

+/-0.3 0.06

+/-02

Dimensions are in inches and millimeters

Tape Size Reel

Option Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)

8mm 7" Dia 7.00

177.8 0.059

1.5 512 +0. 020/-0.008

13 +0.5/-0.2 0.795

20.2 2.165

55 0.331 +0.059/-0.000

8.4 +1.5/0 0.567

14.4 0.311 – 0.429

7.9 – 10.9

8m m 13" Dia 13.00

330 0.059

1.5 512 +0. 020/-0.008

13 +0.5/-0.2 0.795

20.2 4.00

100 0.331 +0.059/-0.000

8.4 +1.5/0 0.567

14.4 0.311 – 0.429

7.9 – 10.9

See detail AA

Dim A

max

13" Diameter Option

7" Diameter Option

Dim A

Max

See detail AA

W2 max Measured at Hub

W1 Measured at Hub

Dim N

Dim D

min

Dim C

B Min

DETAIL AA

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481

rotational and lateral movement requirements (see sketches A, B, and C).

20 deg maximum component rotation

0.5mm

maximum

0.5mm

maximum

Sketch C (Top View)

Component lateral movement

Typical

component

cavity

center line

20 deg maximum

Typical

component

center line

Sketch B (Top View)

Component Rotation

Sketch A (Side or Front Sectional View)

Component Rotation

User Direction of Feed

SSOT-3 Embossed Carrier Tape

Configuration: Figure 3.0

SSOT-3 Reel Configuration: Figure 4.0

P1 A0

D0P0 P2

SuperSOTTM-3 Tape and Reel Data, continued

July 1999, Rev. C

SuperSOT-3 (FS PKG Code 32)

1 : 1

Scale 1:1 on letter size paper

D im ensions s how n below are in:

inches [ millimeters ]

Part Weight per unit (gram): 0.0097

SuperSOTTM-3 Package Dimensions

September 1998, Rev. A

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Formative or

In Design

First Production

Full Production

Not In Production

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

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