2N6718
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
www.unisonic.com.tw
QW-R201-056,B
ABSOLUTE MAXIMUM RATING
(Ta=25
℃
, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage V
CBO
100 V
Collector-Emitter Voltage V
CEO
100 V
Emitter-Base Voltage V
EBO
5 V
Collector Current (Continue) I
C
1 A
Collector Current (Pulse) I
C
2 A
SOT-89 0.5 W
TO-126C 1.6 W
Total Power Dissipation
TO-92
P
D
850 mW
Junction Temperature T
J
+150
℃
Storage Temperature T
STG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25
℃
, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BV
CBO
I
C
=100uA 100 V
Collector-Emitter Breakdown Voltage (note) BV
CEO
I
C
=1mA 100 V
Emitter-Base Breakdown Voltage BV
EBO
I
E
=10
µ
A 5 V
Collector-Emitter Saturation Voltage V
CE(SAT)
I
C
=350mA, I
B
=35mA 350 mV
Collector Cut-Off Current I
CBO
V
CB
=80V 100 nA
h
FE1
V
CE
=1V, I
C
=50mA 80
h
FE2
V
CE
=1V, I
C
=250mA 50 300
DC Current Gain
h
FE3
V
CE
=1V, I
C
=500mA 20
Current Gain - Bandwidth Product f
T
V
CE
=10V, I
C
=50mA,
f=100MHz 50 MHz
Output Capacitance Cob V
CB
=10V, I
E
=0, f=1MHz 20 pF
Note: Pulse test: PulseWidth≤380
µ
s, Duty Cycle≤2%
CLASSIFICATION OF h
FE2
RANK A B
RANGE 50~115 95~300