© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 6 1Publication Order Number:
MBR16100CT/D
MBR16100CTG
Switch-mode
Power Rectifier
Features and Benefits
•Low Forward Voltage
•Low Power Loss/High Efficiency
•High Surge Capacity
•175°C Operating Junction Temperature
•Low Stored Charge Majority Carrier Conduction
•16 A Total (8.0 A Per Diode Leg)
•This Device is Pb−Free and is RoHS Compliant*
Applications
•Power Supply − Output Rectification
•Power Management
•Instrumentation
Mechanical Characteristics
•Case: Epoxy, Molded
•Epoxy Meets UL 94 V−0 @ 0.125 in
•Weight: 1.9 Grams (Approximately)
•Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
•ESD Rating: Human Body Model = 3B
Machine Model = C
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
SCHOTTKY BARRIER
RECTIFIER
16 AMPERES, 100 VOLTS
1
3
2, 4
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MBR16100CTG TO−220
(Pb−Free) 50 Units/Rail
TO−220
CASE 221A
STYLE 6
3
4
12
MARKING
DIAGRAM
A = Assembly Location
Y = Year
WW = Work Week
B16100 = Device Code
G = Pb−Free Package
AKA = Diode Polarity
AYWW
B16100G
AKA
MBR16100CTG
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MAXIMUM RATINGS (Per Diode Leg)
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100 V
Average Rectified Forward Current
(TC = 166°C) Per Diode
Per Device
IF(AV) 8.0
16
A
Peak Repetitive Forward Current
(Square Wave, 20 kHz)
TC = 165°C
IFRM 16 A
Non-repetitive Peak Surge Current
(Surge applied at rated load conditions half-wave, single phase, 60 Hz) IFSM 150 A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 0.5 A
Operating Junction Temperature (Note 1) TJ*65 to +175 °C
Storage Temperature Tstg *65 to +175 °C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be af fected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Thermal Resistance, Junction−to−Case (Min. Pad)
Junction−to−Ambient (Min. Pad) RqJC
RqJA 2.0
60 °C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Characteristic Symbol Min Typical Max Unit
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 8.0 A, TJ = 125°C)
(iF = 8.0 A, TJ = 25°C)
(iF = 16 A, TJ = 125°C)
(iF = 16 A, TJ = 25°C)
vF−
−
−
−
0.56
0.68
0.67
0.79
0.60
0.74
0.69
0.84
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
iR−
−0.95
0.0013 5.0
0.1
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%.
MBR16100CTG
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Figure 1. Typical Forward Voltage Per Diode Figure 2. Maximum Forward Voltage Per Diode
0.60
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
100
10
0.2 0.4 0.8
1
0.1 1
TJ = 25°C
175°C
125°C75°C
0.50.1 0.3 0.7 0.9
i
F
, INSTANTANEOUS FORWARD
VOLTAGE (AMPS)
0.60
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
100
10
0.2 0.4 0.8
1
0.1
1
TJ = 25°C
175°C
125°C75°C
0.50.1 0.3 0.7 0.9
IF, INSTANTANEOUS FORWARD
CURRENT (AMPS)
Figure 3. Typical Reverse Current Per Diode Figure 4. Typical Capacitance Per Diode
0
VR, REVERSE VOLTAGE (VOLTS)
10 20 30 40 100
Figure 5. Current Derating, Case Per Leg Figure 6. Current Derating, Ambient Per Leg
50 60 70 80 90
IR, REVERSE CURRENT (AMPS)
TJ = 25°C
175°C
125°C
75°C
0
VR, REVERSE VOLTAGE (VOLTS)
10 20 30 40 10
0
50 60 70 80 90
IR, REVERSE CURRENT (AMPS)
TJ = 25°C
175°C
125°C
75°C
I , AVERAGE FORWARD CURRENT (AMPS)
F (AV)
TA, AMBIENT TEMPERATURE (°C)
05025 75
2.0
4.0
6.0
8.0
10
TC, CASE TEMPERATURE (C°)
180
14
4.0
0
dc
SQUARE WAVE
145 155 160
I , AVERAGE FORWARD CURRENT (AMPS)
F (AV)
2.0
12
16
6.0
8.0
10
12
14
16
140 150 0100 125 150 175
SQUARE WAVE
RATED VOLTAGE APPLIED
RqJA = 16° C/W
dc
RqJA = 60° C/W
(NO HEATSINK)
170 175
165
dc
1E−1
1E−2
1E−3
1E−6
1E−7
1E−5
1E−4
1E−1
1E−2
1E−3
1E−6
1E−7
1E−5
1E−4
MBR16100CTG
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VR, REVERSE VOLTAGE (VOLTS)
100
1200
600
020 30 40 80
1400
1000
800
50 60 70
200
400
90 100
C, CAPACITANCE (pF)
Figure 7. Forward Power Dissipation Figure 8. Typical Capacitance Per Diode
P , AVERAGE FORWARD POWER DISSIPATION (WATTS)
F (AV)
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
04 12816
24
16
0
8
4
12
SQUARE WAVE
20 24 28 30
20
28
dc
26
18
2
10
6
14
22
30
210614182226
TJ = 175°C
MBR16100CTG
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5
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.415 9.66 10.53
C0.160 0.190 4.07 4.83
D0.025 0.038 0.64 0.96
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.161 2.80 4.10
J0.014 0.024 0.36 0.61
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
STYLE 6:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
P
UBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
MBR16100CT/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your loc
al
Sales Representative
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