2008-03-27
Rev.1.7 Page 1
BSP316P
SIPMOS
Small-Signal-Transistor Product Summary
VDS -100 V
RDS(on) 1.8 Ω
ID-0.68 A
Feature
• P-Channel
• Enhancement mode
• Logic Level
• dv/dt rated
PG-SOT223-4-1
Gate
pin1
Drain
pin 2/ 4
Source
pin 3
Marking
BSP316P
Type Package Tape and Reel Information
BSP316P PG-SOT223-4-1 L6327: 1000 pcs/reel
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TA=25°C
TA=70°C
ID
-0.68
-0.54
A
Pulsed drain current
TA=25°C
ID puls -2.72
Reverse diode dv/dt
IS=-0.68A, VDS=-48V, di/dt=-200A/µs, Tjmax=150°C
dv/dt6 kV/µs
Gate source voltage VGS ±20 V
Power dissipation
TA=25°C
Ptot 1.8 W
Operating and storage temperature Tj , Tstg -55... +150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
• Qualified according to AEC Q101
Packaging
Non dry
ESD Class
JESD22-A114-HBM
Class 1a
BSP316P
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point
(Pin 4) RthJS - 15 25 K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 1)
RthJA
-
-
80
48
115
70
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0, ID=-250µA
V(BR)DSS -100 - - V
Gate threshold voltage, VGS = VDS
ID=-170µA
VGS(th) -1 -1.5 -2
Zero gate voltage drain current
VDS=-100V, VGS=0, Tj=25°C
VDS=-100V, VGS=0, Tj=150°C
IDSS
-
-
-0.1
-10
-0.2
-100
µA
Gate-source leakage current
VGS=-20V, VDS=0
IGSS - -10 -100 nA
Drain-source on-state resistance
VGS=-4.5V, ID=-0.61A
RDS(on) - 1.5 2.3 Ω
Drain-source on-state resistance
VGS=-10V, ID=-0.68A
RDS(on) - 1.4 1.8
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2008-03-27
Rev.1.7 Page 2
BSP316P
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance gfs |VDS|≥2*|ID|*RDS(on)max ,
ID=-0.54A
0.5 1 - S
Input capacitance Ciss VGS=0, VDS=-25V,
f=1MHz
- 117 146 pF
Output capacitance Coss - 27.7 34.5
Reverse transfer capacitance Crss - 12 15
Turn-on delay time td(on) VDD=-50V, VGS=-10V,
ID=-0.68A, RG=6Ω
- 4.7 7 ns
Rise time tr- 7.5 11.2
Turn-off delay time td(off) - 67.4 101
Fall time tf- 25.9 38.9
Gate Charge Characteristics
Gate to source charge Qgs VDD=-80V, ID=-0.68A - -0.2 -0.3 nC
Gate to drain charge Qgd - -1.87 -2.8
Gate charge total QgVDD=-80V, ID=-0.68A,
VGS=0 to -10V
- -5.1 -6.4
Gate plateau voltage V(plateau) VDD=-80V, ID=-0.68A - -2.7 - V
Reverse Diode
Inverse diode continuous
forward current ISTA=25°C - - -0.68 A
Inv. diode direct current, pulsedISM - - -2.72
Inverse diode forward voltage VSD VGS=0, IF=-0.68A - -0.85 -1.2 V
Reverse recovery time trr VR=-50V, IF=lS,
diF/dt=100A/µs
- 44.2 55.3 ns
Reverse recovery charge Qrr - 56.3 70.4 nC
2008-03-27
Rev.1.7 Page 3
BSP316P
1 Power dissipation
Ptot = f (TA)
0 20 40 60 80 100 120 °C 160
TA
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
W
1.9 BSP 316 P
Ptot
2 Drain current
ID = f (TA)
parameter: |VGS| ≥ 10V
0 20 40 60 80 100 120 °C 160
TA
0
-0.05
-0.1
-0.15
-0.2
-0.25
-0.3
-0.35
-0.4
-0.45
-0.5
-0.55
-0.6
A
-0.75 BSP 316 P
ID
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , T
A
= 25°C
-10 -1 -10 0 -10 1 -10 2 -10 3
V
VDS
-2
-10
-1
-10
0
-10
1
-10
A
BSP 316 P
ID
R
DS(on)
= V
DS
/ I
D
DC
10 ms
1 ms
tp = 250.0µs
4 Transient thermal impedance
ZthJA = f (tp)
parameter : D = tp/T
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4
s
tp
-2
10
-1
10
0
10
1
10
2
10
K/W
BSP 316 P
ZthJA
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2008-03-27
Rev.1.7 Page 4
BSP316P
5 Typ. output characteristic
ID = f (VDS)
parameter: Tj =25°C, -VGS
0 0.5 1 1.5 2 2.5 3 3.5 4 V5
-VDS
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
A
2.4
-ID
10V
5V
4.4V
3.6V
3.2V
2.8V
2.4V
2.2V
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: Tj =25°C, -VGS
0 0.4 0.8 1.2 1.6 A2.4
-ID
0
1
2
3
4
5
Ω
7
RDS(on)
2.2V
2.4V
2.8V
3.2V
3.6V
4.4V
5V
10V
7 Typ. transfer characteristics
ID= f ( VGS ); |VDS|≥ 2 x |ID| x RDS(on)max
parameter: Tj = 25 °C
0 0.5 1 1.5 2 2.5 3 3.5 V4.5
-VGS
0
0.5
1
1.5
2
2.5
A
3.5
-ID
8 Typ. forward transconductance
gfs = f(ID)
parameter: T
j
=25°C
0 0.4 0.8 1.2 1.6 2 2.4 A3.2
-ID
0
0.3
0.6
0.9
1.2
S
1.8
gfs
2008-03-27
Rev.1.7 Page 5
BSP316P
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = -0.68 A, VGS = -10 V
-60 -20 20 60 100 °C 180
Tj
0
0.5
1
1.5
2
2.5
3
3.5
4
Ω
5 BSP 316 P
RDS(on)
typ
98%
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS
-60 -20 20 60 100 °C 160
Tj
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
V
2.4
VGS(th)
2%
typ.
98%
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0, f=1 MHz, T
j
= 25 °C
0 4 8 12 16 20 24 28 V36
-VDS
0
10
1
10
2
10
3
10
pF
C
Ciss
Coss
Crss
12 Forward character. of reverse diode
IF = f (VSD)
parameter: T
j
0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V-3
VSD
-2
-10
-1
-10
0
-10
1
-10
A
BSP 316 P
IF
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 150 °C typ
Tj = 150 °C (98%)
2008-03-27
Rev.1.7 Page 6
BSP316P
13 Typ. gate charge
VGS = f (QGate)
parameter: ID = -0.68 A pulsed, Tj = 25 °C
0 1 2 3 4 5 6 7 nC 8.5
|QG|
0
-2
-4
-6
-8
-10
-12
V
-16 BSP 316 P
VGS
0.2 VDS max
0.5 VDS max
0.8 VDS max
14 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
-60 -20 20 60 100 °C 180
Tj
-90
-92
-94
-96
-98
-100
-102
-104
-106
-108
-110
-112
-114
V
-120 BSP 316 P
V(BR)DSS
2008-03-27
Rev.1.7 Page 7
2008-03-27
Rev.1.7 Page 8
