VUB116-16NOXT 3~ Rectifier Standard Rectifier Module Brake Chopper VRRM = 1600 V VCES = 1200 V I DAV = 120 A I C25 I FSM = 700 A VCE(sat) = = 120 A 1.8 V 3~ Rectifier Bridge + Brake Unit + NTC Part number VUB116-16NOXT Backside: isolated 10+11 12 13 19+20 NTC ~6+7 ~4+5 ~2+3 1 8+9 18 17 21+22 Features / Advantages: Applications: Package: E2-Pack Package with DCB ceramic Improved temperature and power cycling Planar passivated chips Very low forward voltage drop Very low leakage current NTC 3~ Rectifier with brake unit for drive inverters Isolation Voltage: 3600 V~ Industry standard outline RoHS compliant Soldering pins for PCB mounting Height: 17 mm Base plate: Copper internally DCB isolated Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20120207b VUB116-16NOXT Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 1700 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 1600 V IR reverse current VR = 1600 V TVJ = 25C 100 A VR = 1600 V TVJ = 150C 1.5 mA TVJ = 25C 1.19 V 1.64 V 1.12 V VF IF = forward voltage drop min. 40 A typ. I F = 120 A IF = TVJ = 125 C 40 A I F = 120 A TC = 105C I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current It CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2012 IXYS all rights reserved V 120 A TVJ = 150 C 0.80 V d= for power loss calculation only Ptot 1.70 T VJ = 150 C 7.6 m 0.65 K/W 0.1 K/W TC = 25C 190 W t = 10 ms; (50 Hz), sine TVJ = 45C 700 A t = 8,3 ms; (60 Hz), sine VR = 0 V 755 A t = 10 ms; (50 Hz), sine TVJ = 150 C 595 A A t = 8,3 ms; (60 Hz), sine VR = 0 V 645 t = 10 ms; (50 Hz), sine TVJ = 45C 2.45 kAs t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 2.37 kAs TVJ = 150 C 1.77 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25C Data according to IEC 60747and per semiconductor unless otherwise specified 1.73 kAs 27 pF 20120207b VUB116-16NOXT Ratings Brake IGBT Symbol VCES Definition VGES Conditions min. max. 1200 Unit V max. DC gate voltage 20 V VGEM max. transient gate emitter voltage 30 V I C25 collector current TVJ = collector emitter voltage I C80 TC = 25C 120 A TC = 80 C 84 A 390 W 2.1 V Ptot total power dissipation VCE(sat) collector emitter saturation voltage VGE(th) gate emitter threshold voltage I C = 3 mA; VGE = V CE TVJ = 25C I CES collector emitter leakage current VCE = VCES ; V GE = 0 V TVJ = 25C I GES gate emitter leakage current VGE = 20 V TC = 25C Q G(on) total gate charge VCE = 600 V; VGE = 15 V; I C = 75 A t d(on) turn-on delay time IC = 75 A; VGE = 15 V TVJ = 25C 1.8 TVJ = 125C 2.1 TVJ = 125C tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area I CM typ. 25C inductive load 6.0 TVJ = 125C VGE = 15 V; R G = 10 short circuit safe operating area t SC short circuit duration VCE = 900 V; VGE = 15 V I SC short circuit current R G = 10 ; non-repetitive R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink V 0.2 mA mA 0.6 nA 230 nC 70 ns 40 ns 250 ns 100 ns 6.8 mJ 8.3 mJ TVJ = 125C VCEK = 1200 V SCSOA 6.5 500 VCE = 600 V; IC = 75 A VGE = 15 V; R G = 10 5.5 V TVJ = 125C 225 A 10 s A 300 0.32 K/W K/W 0.15 Brake Diode VRRM max. repetitive reverse voltage TVJ = 25C 1200 V I F25 forward current TC = 25C 48 A TC = 80 C 32 A TVJ = 25C 2.75 V TVJ = 25C 0.25 mA TVJ = 125C 1 mA I F 80 VF forward voltage I F = 30 A IR reverse current VR = VRRM Q rr reverse recovery charge VR = I RM max. reverse recovery current -di F /dt = 400 A/s t rr reverse recovery time IF = R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink TVJ = 125C IXYS reserves the right to change limits, conditions and dimensions. (c) 2012 IXYS all rights reserved 600 V 30 A V 1.99 1.8 C 23 A 150 ns TVJ = 125C 0.9 K/W 0.3 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20120207b VUB116-16NOXT Package Ratings E2-Pack Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. max. 200 Unit A -40 125 C -40 150 C 6 Nm Weight MD 176 3 mounting torque d Spp/App d Spb/Apb VISOL typ. creepage distance on surface | striking distance through air terminal to terminal 6.0 mm terminal to backside 12.0 mm 3600 V 3000 V t = 1 second isolation voltage t = 1 minute g 50/60 Hz, RMS; IISOL 1 mA 2D Data Matrix XXXXXXXXXX yywwx Logo UL Part number Date Code Location Ordering Standard Part Number VUB116-16NOXT Marking on Product VUB116-16NOXT Delivery Mode Box Quantity 6 Code No. 510755 105 Temperature Sensor NTC Symbol Definition Conditions R 25 resistance TVJ = 25 B 25/50 temperature coefficient min. 4.75 typ. 5 3375 max. Unit 5.25 k K 104 R [ ] 103 Equivalent Circuits for Simulation I V0 R0 * on die level Rectifier Brake IGBT Brake Diode V 0 max threshold voltage 0.8 1.1 1.31 R 0 max slope resistance * 4.5 17.9 8 IXYS reserves the right to change limits, conditions and dimensions. (c) 2012 IXYS all rights reserved T VJ = 150 C 102 0 V m 25 50 75 100 TC [C] 125 150 Typ. NTC resistance vs. temperature Data according to IEC 60747and per semiconductor unless otherwise specified 20120207b VUB116-16NOXT Outlines E2-Pack Dimmensions w/o tolerances acc. DIN ISO 2768-T1-m 10+11 12 13 19+20 NTC ~6+7 ~4+5 ~2+3 1 8+9 IXYS reserves the right to change limits, conditions and dimensions. (c) 2012 IXYS all rights reserved 18 17 21+22 Data according to IEC 60747and per semiconductor unless otherwise specified 20120207b VUB116-16NOXT Rectifier 160 600 120 500 10000 TVJ = 45C IF IFSM 80 [A] TVJ= 45C 400 1000 [A] TVJ= 150C 2 [A s] TVJ = 150C 300 40 TVJ = 125C TVJ = 150C TVJ = 25C 0 0.0 0.5 1.0 1.5 50Hz, 80% VRRM 200 0.001 0.01 2.0 100 0.1 2 1 1 4 5 6 7 89 2 Fig. 3 I t versus time per diode Fig. 2 Surge overload current Fig. 1 Forward current versus voltage drop per diode 3 t [ms] t [s] VF [V] 140 DC = 1 0.5 0.4 0.33 0.17 0.08 60 Ptot 40 RthA: 0.2 K/W 0.4 K/W 0.6 K/W 0.8 K/W 1.0 K/W 2.0 K/W DC = 1 0.5 0.4 0.33 0.17 0.08 120 100 IdAV 80 [A] 60 [W] 20 40 20 0 0 0 10 20 30 40 50 0 25 50 75 100 125 150 175 0 25 50 Tamb [C] IdAVM [A] 75 100 125 150 175 TC [C] Fig. 4 Power dissipation vs. direct output current and ambient temperature Fig. 5 Max. forward current vs. case temperature 1 ZthJC 0.1 [K/W] 0.01 1 10 100 1000 Ri 0.085 0.012 0.041 0.007 0.309 0.036 0.215 0.102 i 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20120207b VUB116-16NOXT Brake IGBT 150 150 VGE = 15 V 125 125 100 IC 11V 125 100 TVJ = 25C 100 IC 75 IC 75 TVJ = 125C [A] 75 [A] 9V 50 50 25 25 0 [A] 50 TVJ = 125C 1 2 3 1 2 3 4 5 Fig. 2 Typ. output characteristics 15 8 [mJ] [mJ] 7 Eoff 4 Eon 300 IC = 75 A VCE = 600 V VGE = 15 V TVJ = 125C 5 0 QG [nC] 40 80 120 160 8 12 16 20 24 RG [ ] IC [A] Fig. 4 Typ. turn-on gate charge Eon 6 0 200 Eoff E 8 0 10 11 12 13 9 E 5 9 10 12 10 8 Fig. 3 Typ. tranfer characteristics RG = 10 VCE = 600 V VGE = 15 V TVJ = 125C IC = 75 A VCE = 600 V 100 7 VGE [V] 16 0 6 VCE [V] 20 [V] TVJ = 25C 0 0 VCE [V] Fig. 1 Typ. output characteristics TVJ = 125C 25 0 0 VGE 150 13V VGE = 15 V 17 V 19 V Fig. 5 Typ. switching energy versus collector current Fig. 6 Typ. switching energy versus gate resistance 1 ZthJC 0.1 [K/W] 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 t [s] Fig. 7 Typ. transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20120207b VUB116-16NOXT Brake Diode 80 5 60 TVJ = 125C VR = 800 V 70 4 50 IF = 60 A 30 A 15 A 60 IF 50 IF = 60 A 30 A 15 A 3 Qr 40 [A] TVJ = 125C 25C 30 40 IRM 30 [A] [C] 2 20 20 1 0 0 1 2 0 100 3 TVJ = 125C VR = 800 V 10 10 0 1000 V F [V ] 0 200 Fig. 2 Typ. reverse recovery charge Qr versus -diF /dt Fig. 1 Forward current IF vs. VF 2.0 220 1.5 trr Kf 1.0 800 1000 120 1.2 TVJ = 125C IF = 30 A 100 IF = 60 A 30 A 15 A 180 600 Fig. 3 Typ. peak reverse current IRM versus -diF /dt TVJ = 125C VR = 800 V 200 400 -diF /dt [A/s] -diF /dt [A/s] 1.0 80 0.8 60 0.6 VFR [ns] 160 trr [s] [V] IRM 40 0.4 0.5 140 QR 20 0.2 trr VFR 0.0 0 120 0 40 80 120 160 0 200 400 600 800 1000 -diF /dt [A/s] TVJ [C] Fig. 4 Dynamic parameters Qr, IRM versus TVJ 0 200 400 600 800 0.0 1000 -diF /dt [A/s] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt Fig. 5 Typ. recovery time trr versus -diF /dt 1 ZthJC 0.1 i [K/W] Ri [K/W] 1 0.465 2 0.179 3 0.256 0.01 0.001 0.01 0.1 ti [s] 0.0052 0.0003 0.0397 1 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20120207b