BYV32E-200
Dual rugged ultrafast rectier diode, 20 A, 200 V
Rev.05 - 7 March 2018 Product data sheet
1. General description
Ultrafast dual epitaxial rectier diode in a SOT78 (TO-220AB) plastic package.
2. Features and benets
• High reverse voltage surge capability
• High thermal cycling performance
• Low thermal resistance
• Very low on-state loss
• Soft recovery characteristic minimizes power consuming oscillations
3. Applications
• Output rectiers in high-frequency switched-mode power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Values Unit
Absolute maximum rating
VRRM repetitive peak reverse
voltage
200 V
IO(AV) average output current δ = 0.5; square-wave pulse; Tmb ≤ 115 °C;
both diodes conducting; Fig. 1; Fig. 2
20 A
IRRM repetitive peak reverse
current
δ = 0.001; tp = 2 μs; 0.2 A
VESD electrostatic discharge
voltage
HBM; C = 250 pF; R = 1.5 kΩ; all pins 8 kV
IFRM repetitive peak forward
current
δ = 0.5; tp = 25 μs; Tmb ≤ 115 °C;
per diode
20 A
IFSM non-repetitive peak
forward current
tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C;
per diode
125 A
tp = 8.3 ms; sine-wave pulse; Tj(init) = 25 °C;
per diode
137 A
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
VFforward voltage IF = 8 A; Tj = 150 °C; Fig. 4 - 0.72 0.85 V
Dynamic characteristics
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs;
Tj = 25 °C; ramp recovery; Fig. 5
- 20 25 ns
IF = 0.5 A to IR = 1 A; Tj = 25 °C;
measured at IR= 0.25 A; step recovery;
Fig. 6
- 10 20 ns
WeEn Semiconductors BYV32E-200
Dual rugged ultrafast rectier diode, 20 A, 200 V
BYV32E-200
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5. Pinning information
6. Ordering information
Table 2. Pinning information
Pin Symbol Description Simplied outline Graphic symbol
1 A1 anode 1
12
mb
3
sym125
A2
A
1
K
2 K cathode
3 A2 anode 2
mb K mounting base; cathode
Type number Package
Name Description Version
BYV32E-200 TO-220AB plastic single-ended package; heatsink mounted;
1 mounting hole; 3-lead TO-220AB
SOT78
Table 3. Ordering information
7. Marking
Type number Marking codes
BYV32E-200 BYV32E-200
Table 4. Marking codes
WeEn Semiconductors BYV32E-200
Dual rugged ultrafast rectier diode, 20 A, 200 V
BYV32E-200
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8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Values Unit
VRRM repetitive peak reverse
voltage
200 V
VRWM crest working reverse
voltage
200 V
VR reverse voltage DC 200 V
IO(AV) average output current δ = 0.5; square-wave pulse; Tmb ≤ 115 °C;
both diodes conducting; Fig 1; Fig 2
20 A
IFRM repetitive peak forward
current
δ = 0.5; tp = 25 μs; Tmb ≤ 115 °C;
per diode
20 A
IFSM non-repetitive peak
forward current
tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C;
per diode
125 A
tp = 8.3 ms; sine-wave pulse; Tj(init) = 25 °C;
per diode
137 A
IRRM r e p e t i t i v e p e a k r e v e r s e
current
δ = 0.001; tp = 2 μs; per diode 0.2 A
IRSM non-repetitive peak
reverse current
tp = 100 μs; per diode 0.2 A
Tstg storage temperature -40 to 150 °C
Tj junction temperature 150 °C
VESD electrostatic discharge
voltage
HBM; all pins; C = 250 pF; R = 1.5 kΩ 8 kV
IF(AV) = IF(RMS) × √δ
Fig. 2. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
a = form factor = IF(RMS) / IF(AV)
Fig. 1. Forward power dissipation as a function
of average forward current; sinusoidal
waveform; maximum values
WeEn Semiconductors BYV32E-200
Dual rugged ultrafast rectier diode, 20 A, 200 V
BYV32E-200
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9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance
from junction to
mounting base
with heatsink compound;
both diodes conducting
- - 1.6 K/W
with heatsink compound;
per diode; Fig 3
- - 2.4 K/W
Rth(j-a) thermal resistance
from junction to
ambient
- 60 - K/W
Fig. 3. Transient thermal impedance from junction to mounting base as a function of pulse width
WeEn Semiconductors BYV32E-200
Dual rugged ultrafast rectier diode, 20 A, 200 V
BYV32E-200
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10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
VF forward voltage IF = 8 A; Tj = 150 °C; Fig. 4 - 0.72 0.85 V
IF = 20 A; Tj = 25 °C - 1 1.15 V
IR reverse current VR = 200 V; Tj = 25 °C - 6 30 μA
VR = 200 V; Tj = 100 °C - 0.2 0.6 mA
Dynamic characteristics
Qr recovered charge IF = 2 A; VR = 30 V; dIF/dt = 20 A/μs;
Tj = 25 °C
- 8 12.5 nC
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs;
Tj = 25 °C; ramp recovery; Fig. 5
- 20 25 ns
IF = 0.5 A to IR = 1 A; Tj = 25 °C;
measured at IR= 0.25 A; step recovery;
Fig. 6
- 10 20 ns
vFR forward recovery voltage IF = 1 A; dIF/dt = 10 A/μs; Tj = 25 °C;
Fig. 7
- - 1 V
WeEn Semiconductors BYV32E-200
Dual rugged ultrafast rectier diode, 20 A, 200 V
BYV32E-200
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March
2018 6 / 11
003aac562
t
rr
time
100 %
25 %
I
F
dl
F
dt
I
R
I
RM
Q
r
001aab912
time
time
V
FRM
V
F
I
F
V
F
Fig. 6. Reverse recovery denitions; step recovery Fig. 7. Forward recovery denitions
Fig. 5. Reverse recovery denitions; ramp recovery
(1) Tj = 150 °C; typical values
(2) Tj = 150 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 4. Forward current as a function of forward voltage
WeEn Semiconductors BYV32E-200
Dual rugged ultrafast rectier diode, 20 A, 200 V
BYV32E-200
Product
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REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION ISSUE DATE
IECJEDEC JEITA
SOT78SC-46
3-lead TO-220AB
SOT78
08-04-23
08-06-13
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
UNIT A
mm 4.7
4.1
1.40
1.25
0.9
0.6
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
15.0
12.8
3.30
2.79
3.8
3.5
A1
DIMENSIONS (mm are the original dimensions)
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
0510 mm
scale
b b1(2)
1.6
1.0
c D
1.3
1.0
b2(2)D1E e
2.54
L L1(1)L2(1)
max.
3.0
p q
3.0
2.7
Q
2.6
2.2
D
D1
q
p
L
123
L1(1)
b1(2)
(3×)
b2(2)
(2×)
ee
b(3×)
AE
A1
c
Q
L2(1)
mounting
base
11. Package outline
WeEn Semiconductors BYV32E-200
Dual rugged ultrafast rectier diode, 20 A, 200 V
BYV32E-200
Product
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2018.
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March
2018 8 / 11
12. Revision history
Table 8. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BYV32E-200 v.5 20180307 Product specication - BYV32E-200_4
Modications: Change from NXP version to WeEn version
BYV32E-200_4 20090227 Product specication - BYV32E_SERIES_3
Modications: • The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Package outline updated.
• Type number BYV32E-20 separated from data sheet BYV32E_SERIES_3
BYV32E_SERIES_3 20010301 Product specication - BYV32E_SERIES_2
BYV32E_SERIES_2 19980701 Product specication - BYV32EB_SERIES_1
BYV32EB_SERIES_1 19960801 Product specication - -
WeEn Semiconductors BYV32E-200
Dual rugged ultrafast rectier diode, 20 A, 200 V
BYV32E-200
Product
data
sheet
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2018.
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7
March
2018 9 / 11
13. Legal information
Data sheet status
Document
status [1][2]
Product
status [3]
Definition
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production This document contains the product
specification.
[1 lease consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.ween-semi.com.
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Quick reference data — The Quick reference data is an extract of the
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
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]P
WeEn Semiconductors BYV32E-200
Dual rugged ultrafast rectier diode, 20 A, 200 V
BYV32E-200
Product
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March
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Translations — A non-English (translated) version of a document is for
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between the translated and English versions.
Trademarks
Notice: All referenced brands, product names, service names and
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WeEn Semiconductors BYV32E-200
Dual rugged ultrafast rectier diode, 20 A, 200 V
BYV32E-200
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14. Contents
1. General description .......................................................1
2. Features and benets ...................................................1
3. Applications ...................................................................1
4. Quick reference data ..................................................... 1
5. Pinning information .......................................................2
6. Ordering information .....................................................2
7. Marking ...........................................................................2
8. Limiting values ..............................................................3
9. Thermal characteristics ................................................4
10. Characteristics.............................................................5
11. Package outline ...........................................................7
12. Revision history...........................................................8
13. Legal information ........................................................9
14. Contents ..................................................................... 11
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
For more information, please visit: http://www.ween-semi.com
For sales oce addresses, please send an email to: salesaddresses@ween-semi.com
Date of release: 7 March 2018
