AUTOMOTIVE GRADE AUIRFL014N VDSS Features Advanced Planar Technology Low On-Resistance Dynamic dv/dt Rating 150C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * RDS(on) max. ID Package Type AUIRFL014N SOT-223 0.16 1.9A D S Description Specifically designed for Automotive applications, this Cellular design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Base part number 55V D G SOT-223 AUIRFL014N G Gate D Drain Standard Pack Form Quantity Tape and Reel 2500 S Source Orderable Part Number AUIRFL014NTR Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. ID @ TA = 25C Continuous Drain Current, VGS @ 10V 2.7 ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation (PCB Mount) 1.9 1.5 15 2.1 PD @TA = 25C Maximum Power Dissipation (PCB Mount) Linear Derating Factor (PCB Mount) Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range VGS EAS IAR EAR dv/dt TJ TSTG Thermal Resistance Symbol RJA RJA Parameter Junction-to-Ambient (PCB Mount, steady state) Junction-to-Ambient (PCB Mount, steady state) Units A 1.0 8.3 20 48 1.7 0.1 5.0 -55 to + 150 W W/C V mJ A mJ V/ns C Typ. Max. Units 90 50 120 60 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-10-5 AUIRFL014N Static @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 55 --- --- V VGS = 0V, ID = 250A --- 0.054 --- V/C Reference to 25C, ID = 1mA --- --- 0.16 VGS = 10V, ID = 1.9A 2.0 --- 4.0 V VDS = VGS, ID = 250A 1.6 --- --- S VDS = 25V, ID = 0.85A --- --- 1 VDS = 44V, VGS = 0V A --- --- 25 VDS = 44V,VGS = 0V,TJ = 150C --- --- 100 VGS = 20V nA --- --- -100 VGS = -20V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Total Gate Charge Qg Qgs Gate-to-Source Charge Qgd Gate-to-Drain Charge td(on) Turn-On Delay Time Rise Time tr td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Reverse Recovery Charge Qrr --- --- --- --- --- --- --- --- --- --- 7.0 1.2 3.3 6.6 7.1 12 3.3 190 72 33 11 1.8 5.0 --- --- --- --- --- --- --- Min. Typ. Max. Units --- --- 1.3 --- --- 15 --- --- --- --- 41 64 1.0 61 95 ID = 1.7A nC VDS = 44V VGS = 10V, See Fig 6 and 9 VDD = 28V ID = 1.7A ns RG = 6.0 RD = 16See Fig. 10 VGS = 0V pF VDS = 25V = 1.0MHz, See Fig.5 Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25C,IS = 1.7A,VGS = 0V ns TJ = 25C ,IF = 1.7A, nC di/dt = 100A/s Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) VDD = 25V, starting TJ = 25C, L = 8.2mH, RG = 25, IAS = 3.4A. (See fig. 12) ISD 1.7A, di/dt 250A/s, VDD V(BR)DSS, TJ 150C. Pulse width 400s; duty cycle 2%. When mounted on FR-4 board using minimum recommended footprint. When mounted on 1 inch square copper board, for comparison with other SMD devices. 2 2015-10-5 AUIRFL014N 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) D 10 1 4.5V 20s PULSE WIDTH TC = 25C 0.1 0.1 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP TOP 1 10 10 4.5V 1 20s PULSE WIDTH TJ = 150C 0.1 0.1 A 100 1 Fig. 2 Typical Output Characteristics Fig. 1 Typical Output Characteristics R DS(on) , Drain-to-Source On Resistance (Normalized) 2.0 I D , Drain-to-Source Current (A) 100 10 TJ = 150C TJ = 25C 1 VDS = 25V 20s PULSE WIDTH 4 5 6 7 8 A 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 0.1 10 I D = 1.7A 1.5 1.0 0.5 VGS = 10V 0.0 -60 9 A -40 -20 0 20 40 60 80 A 100 120 140 160 TJ , Junction Temperature (C) VGS , Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 Fig. 4 Normalized On-Resistance vs. Temperature 2015-10-5 AUIRFL014N 350 250 Ciss 200 Coss V GS , Gate-to-Source Voltage (V) 300 C, Capacitance (pF) 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 150 Crss 100 50 0 1 10 100 A I D = 1.7A V DS = 44V V DS = 28V V DS = 11V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 9 0 0 VDS , Drain-to-Source Voltage (V) 4 6 8 10 A Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY R DS(on) I D , Drain Current (A) ISD , Reverse Drain Current (A) 2 10 TJ = 150C TJ = 25C 1 10 100s 1ms 1 10ms VGS = 0V 0.1 0.4 0.6 0.8 1.0 1.2 VSD , Source-to-Drain Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage 4 A 1.4 TA = 25C TJ = 150C Single Pulse 0.1 1 A 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 2015-10-5 AUIRFL014N Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 9a. Basic Gate Charge Waveform Fig 10a. Switching Time Test Circuit Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms Thermal Response (ZthJA ) 1000 100 D = 0.50 0.20 10 0.10 0.05 PDM 0.02 t 0.01 1 Notes: 1. Duty factor D = t SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 1 /t 1 t2 2 2. Peak TJ = PDM x Z thJA + T A 0.01 0.1 1 10 100 A 1000 t 1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5 2015-10-5 AUIRFL014N 15V L VDS D.U.T RG IAS 20V tp DRIVER + V - DD A 0.01 EAS , Single Pulse Avalanche Energy (mJ) 120 TOP 100 BOTTOM ID 1.5A 2.7A 3.4A 80 60 40 20 0 VDD = 25V 25 50 75 100 125 A 150 Starting TJ , Junction Temperature (C) Fig 12a. Unclamped Inductive Test Circuit Fig 12c. Maximum Avalanche Energy Vs. Drain Current V(BR)DSS tp I AS Fig 12b. Unclamped Inductive Waveforms 6 2015-10-5 AUIRFL014N SOT-223 (TO-261AA) Package Outline (Dimensions are shown in millimeters (inches) SOT-223(TO-261AA) Part Marking Information FL014N Date Code Y= Year WW= Work Week A= Automotive, Lead Free Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 7 2015-10-5 AUIRFL014N SOT-223(TO-261AA) Tape and Reel (Dimensions are shown in millimeters (inches) 2.05 (.080) 1.95 (.077) TR 4.10 (.161) 3.90 (.154) 0.35 (.013) 0.25 (.010) 1.85 (.072) 1.65 (.065) 7.55 (.297) 7.45 (.294) 16.30 (.641) 15.70 (.619) 7.60 (.299) 7.40 (.292) 1.60 (.062) 1.50 (.059) TYP. FEED DIRECTION 12.10 (.475) 11.90 (.469) 2.30 (.090) 2.10 (.083) 7.10 (.279) 6.90 (.272) NOTES : 1. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES. 13.20 (.519) 12.80 (.504) 15.40 (.607) 11.90 (.469) 4 330.00 (13.000) MAX. NOTES : 1. OUTLINE COMFORMS TO EIA-418-1. 2. CONTROLLING DIMENSION: MILLIMETER.. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 50.00 (1.969) MIN. 18.40 (.724) MAX. 14.40 (.566) 12.40 (.488) 4 3 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 2015-10-5 AUIRFL014N Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. SOT-223 MSL1 Class M1A (+/- 50V) AEC-Q101-002 Class H1A (+/- 350V) AEC-Q101-001 Class C5 (+/- 2000V) AEC-Q101-005 Yes Highest passing voltage. Revision History Date 3/26/2014 10/5/2015 Comments Updated part marking on page 7 Updated data sheet with new IR corporate template Updated datasheet with corporate template Corrected ordering table on page 1. 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