Vishay Siliconix
Si4416DY
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com
S-56945—Rev. C, 23-Nov-98 Siliconix was formerly a division of TEMIC Semiconductors
3-2
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 A 1 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V 1
VDS = 24 V, VGS = 0 V, TJ = 55C 25
On-State Drain CurrentAID(on) VDS w 5 V, VGS = 10 V20 A
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VGS = 10 V, ID = 9.0 A 0.014 0.018
VGS = 4.5 V, ID = 7.3 A 0.021 0.028
Forward T ransconductance Agfs VDS = 15 V, ID = 9.0 A 27 S
Diode Forward V oltage AVSD IS = 2.1 A, VGS = 0 V 1.2 V
Gate Charge QgVDS = 15 V, VGS = 5 V, ID = 9.0 A 13 20
Total Gate Charge Qgt 24 35
Gate-Source Charge Qgs VDS = 15 V, VGS = 10 V, ID = 9.0 A 6
Gate-Drain Charge Qgd 4
T urn-On Delay Time td(on) 12 20
Rise T ime trVDD = 15 V, RL = 15 10 20
T urn-Off Delay Time td(off)
ID^ 1 A, VGEN = 10 V, RG = 6 32 50 ns
Fall T ime tf11 20
Source-Drain Reverse Recovery T ime trr IF = 2.1 A, di/dt = 100 A/s 50 90
Notes
A. Pulse test; pulse width v300 s, duty cycle v2%.
B. Guaranteed by design, not subject to production testing.