Si4416DY
Vishay Siliconix
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com
S-56945—Rev. C, 23-Nov-98 Siliconix was formerly a division of TEMIC Semiconductors 3-1
N-Channel 30-V (D-S) MOSFET
New Product
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30
0.018 @ VGS = 10 V 9.0
30
0.028 @ VGS = 4.5 V 7.3
SD
SD
SD
GD
SO-8
5
6
7
8
Top V iew
2
3
4
1
N-Channel MOSFET
DD
G
S
DD
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Drain-Source Voltage VDS 30
V
Gate-Source V oltage VGS 20
V
Continuous Drain Current (TJ= 150
C)A
TA = 25C
ID
9.0
Continuous
Drain
Current
(TJ
=
150 C)A
TA = 70C
ID
7.2
A
Pulsed Drain Current (10 s Pulse Width) IDM 50
A
Continuous Source Current (Diode Conduction)AIS2.1
Maximum Power Dissi
p
ationA
TA = 25C
PD
2.5
W
Maximum
Power
Dissi ationA
TA = 70C
PD
1.6
W
Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 C
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Maximum Junction-to-AmbientARthJA 50 C/W
Notes
A. Surface Mounted on FR4 Board, t 10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70752.
Vishay Siliconix
Si4416DY
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com
S-56945—Rev. C, 23-Nov-98 Siliconix was formerly a division of TEMIC Semiconductors
3-2
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Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 A 1 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 24 V, VGS = 0 V 1
A
Zero
Gate
Voltage
Drain
Current
IDSS
VDS = 24 V, VGS = 0 V, TJ = 55C 25
A
On-State Drain CurrentAID(on) VDS w 5 V, VGS = 10 V20 A
Drain
-
Source On
-
State ResistanceA
rDS(on)
VGS = 10 V, ID = 9.0 A 0.014 0.018
Drain Source
On State
Resistance
rDS(on)
VGS = 4.5 V, ID = 7.3 A 0.021 0.028
Forward T ransconductance Agfs VDS = 15 V, ID = 9.0 A 27 S
Diode Forward V oltage AVSD IS = 2.1 A, VGS = 0 V 1.2 V

Gate Charge QgVDS = 15 V, VGS = 5 V, ID = 9.0 A 13 20
Total Gate Charge Qgt 24 35
nC
Gate-Source Charge Qgs VDS = 15 V, VGS = 10 V, ID = 9.0 A 6
nC
Gate-Drain Charge Qgd 4
T urn-On Delay Time td(on) 12 20
Rise T ime trVDD = 15 V, RL = 15 10 20
T urn-Off Delay Time td(off)
DD L
ID^ 1 A, VGEN = 10 V, RG = 6 32 50 ns
Fall T ime tf11 20
Source-Drain Reverse Recovery T ime trr IF = 2.1 A, di/dt = 100 A/s 50 90
Notes
A. Pulse test; pulse width v300 s, duty cycle v2%.
B. Guaranteed by design, not subject to production testing.
Si4416DY
Vishay Siliconix
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com
S-56945—Rev. C, 23-Nov-98 Siliconix was formerly a division of TEMIC Semiconductors 3-3
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500
1000
1500
2000
2500
0 5 10 15 20 25 30
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0.8
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1.2
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–50 –25 0 25 50 75 100 125 150
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VDS – Drain-to-Source Voltage (V)
– Drain Current (A)ID
VGS = 10 thru 5 V
VGS – Gate-to-Source Voltage (V)
– Drain Current (A)ID
TC = 125C
–55C
– Gate-to-Source Voltage (V)
Qg – Total Gate Charge (nC)
VDS – Drain-to-Source Voltage (V)
C – Capacitance (pF)
VGS
Crss
Coss
Ciss
VDS = 15 V
ID = 9 A
– On-Resistance (rDS(on) )
ID – Drain Current (A)
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VGS = 10 V
ID = 9 A
TJ – Junction Temperature (C)
(Normalized)
– On-Resistance (rDS(on) )
VGS = 10 V
VGS = 4.5 V
3 V 25C
4 V
Vishay Siliconix
Si4416DY
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com
S-56945—Rev. C, 23-Nov-98 Siliconix was formerly a division of TEMIC Semiconductors
3-4
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20
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50
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Square W ave Pulse Duration (sec)
2
1
0.1
0.01 10–4 10–3 10–2 10–1 110
Normalized Effective T ransient
Thermal Impedance
30
– On-Resistance (rDS(on) )
VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)
– Source Current (A)IS
TJ – Temperature (C) T ime (sec)
Power (W)
0
0.02
0.04
0.06
0.08
0.10
0246810
–1.2
–0.8
–0.4
0.0
0.4
0.8
–50 –25 0 25 50 75 100 125 150
TJ = 150C
TJ = 25C
ID = 9.0 A
ID = 250 A
Variance (V)VGS(th)
50
10
1
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 50C/W
3. TJM – TA = PDMZthJA(t)
t1
t2
t1t2
Notes:
4. Surface Mounted
PDM