Maximum Ratings PNP BC857B Section
@ TA= 25°C unless otherwise specified
DS30278 Rev. 5 - 2 1 of 4 BC847PN
www.diodes.com ã Diodes Incorporated
BC847PN
COMPLEMENTARY PAIR SMALL SIGNAL SURFACE
MOUNT TRANSISTOR
Features
Maximum Ratings NPN BC847B Section
@ TA= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current IC100 mA
Peak Collector Current ICM 200 mA
Peak Emitter Current IEM 200 mA
·Epitaxial Die Construction
·Two internal isolated NPN/PNP Transistors in one package
·Ultra-Small Surface Mount Package
·Available in Lead Free/RoHS Compliant Version (Note 2)
Mechanical Data
A
M
JL
D
BC
H
K
G
F
C1B2E2
E1B1C2
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
·Case: SOT-363
·Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·Moisture Sensitivity: Level 1 per J-STD-020C
·Terminals: Solderable per MIL-STD-202, Method 208
·Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 3
·Terminal Connections: See Diagram
·Marking (See Page 3): K7P
·Ordering & Date Code Information: See Page 3
·Weight: 0.006 grams (approx.)
Characteristic Symbol Value Unit
Power Dissipation (Note 1) Pd200 mW
Thermal Resistance, Junction to Ambient (Note 1) RqJA 625 °C/W
Operating and Storage Temperature Range Tj,T
STG -65 to +150 °C
Maximum Ratings Total Device
@ TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -45 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current IC-100 mA
Peak Collector Current ICM -200 mA
Peak Emitter Current IEM -200 mA
SOT-363
Dim Min Max
A0.10 0.30
B1.15 1.35
C2.00 2.20
D0.65 Nominal
F0.30 0.40
H1.80 2.20
J¾0.10
K0.90 1.00
L0.25 0.40
M0.10 0.25
a8°
All Dimensions in mm
SPICE MODEL: BC847PN
DS30278 Rev. 5 - 2 2 of 4 BC847PN
www.diodes.com
Electrical Characteristics NPN BC847B Section
@ TA= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage (Note 3) V(BR)CBO 50 — — V IC = 10mA, IB= 0
Collector-Emitter Breakdown Voltage (Note 3) V(BR)CEO 45 — — V IC = 10mA, IB= 0
Emitter-Base Breakdown Voltage (Note 3) V(BR)EBO 6— — V
IE = 1mA, IC= 0
DC Current Gain (Note 3) hFE 200 290 450 — VCE = 5.0V, IC = 2.0mA
Collector-Emitter Saturation Voltage (Note 3) VCE(SAT) —90
200
250
600 mV IC= 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Saturation Voltage (Note 3) VBE(SAT) —700
900 —mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Voltage (Note 3) VBE(ON) 580
—
660
—
700
720 mV VCE = 5.0V, IC = 2.0mA
VCE =5.0V, IC = 10mA
Collector-Cutoff Current (Note 3) ICBO
ICBO
—
—
—
—
15
5.0
nA
µA
VCB = 30V
VCB = 30V, TA = 150°C
Gain Bandwidth Product fT100 300 — MHz VCE = 5.0V, IC = 10mA,
f = 100MHz
Collector-Base Capacitance CCBO — 3.5 6.0 pF VCB = 10V, f = 1.0MHz
Noise Figure NF — 2.0 10 dB
VCE = 5V, IC = 200µA,
RG = 2.0kW,
f = 1.0kHz, Df = 200Hz
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage (Note 3) V(BR)CBO -50 — — V IC = 10mA, IB= 0
Collector-Emitter Breakdown Voltage (Note 3) V(BR)CEO -45 — — V IC = 10mA, IB= 0
Emitter-Base Breakdown Voltage (Note 3) V(BR)EBO -5 — — V IE = 1mA, IC= 0
DC Current Gain (Note 3) hFE 220 290 475 — VCE = 5.0V, IC = 2.0mA
Collector-Emitter Saturation Voltage (Note 3) VCE(SAT) —-75
-250
-300
-650 mV IC= 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Saturation Voltage (Note 3) VBE(SAT) —-700
-850
—
-950 mV IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Voltage (Note 3) VBE(ON) -600
—
-650
—
-750
-820 mV VCE = 5.0V, IC = 2.0mA
VCE = 5.0V, IC = 10mA
Collector-Cutoff Current (Note 3) ICBO
ICBO
—
—
—
—
-15
-4.0
nA
µA
VCB = 30V
VCB = 30V, TA = 150°C
Gain Bandwidth Product fT100 200 — MHz VCE = 5.0V, IC = 10mA,
f = 100MHz
Collector-Base Capacitance CCBO — 3 4.5 pF VCB = 10V, f = 1.0MHz
Noise Figure NF — — 10 dB
VCE = 5V, IC = 200µA,
RG = 2.0kW,
f = 1.0kHz, Df = 200Hz
Electrical Characteristics PNP BC857B Section
@ TA= 25°C unless otherwise specified
Ordering Information (Note 4)
Device Packaging Shipping
BC847PN-7 SOT-363 3000/Tape & Reel
Notes: 3. Short duration pulse test used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: BC847PN-7-F.
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
DS30278 Rev. 5 - 2 3 of 4 BC847PN
www.diodes.com
Year 1998 1999 2000 2001 2002 2003 2004
Code JKLM N PR
Date Code Key
K7P = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K7P
YM
10
100
1000
0.1 1.0 10 100
f , GAIN BANDWIDTH PRODUCT (MHz)
T
I , COLLECTOR CURRENT (mA)
C
Fi
g
. 4, Gain Bandwidth Product vs Collector Current
(
BC847B
)
T = 25°C
A
V = 10V
CE
5V 2V
0
0.1
0.2
0.3
0.4
0
.5
0.1 1.0 10 100
V , COLLECTOR SATURATION VOLTAGE (V)
CE
I , COLLECTOR CURRENT (mA)
C
Fi
g
. 3, Collector Saturation Volta
g
e vs Collector Current
(
BC847B
)
I / I = 20
CB
T = 100°C
A
25°C
-50°C
1
10
100
1000
1.0 10 1000.10.01
h DC CURRENT GAIN
FE,
I , COLLECTOR CURRENT (mA)
C
Fi
g
. 2, DC Current Gain vs Collector Current
(
BC847B
)
V = 5V
CE
100°C
T = 25°C
A
-50°C
0
50
100
150
200
2
5
0
0 100 200
P , POWER DISSIPATION (mW)
d
T , AMBIENT TEMPERATURE (°C)
A
Fi
g
.1,PowerDeratin
g
Curve
(
Total Device
)
(see Note 1)
Marking Information
DS30278 Rev. 5 - 2 4 of 4 BC847PN
www.diodes.com
1
0.1 10 100 1000
V , COLLECTOR TO EMITTER
CE(SAT)
SATURATION VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
Fig. 5, Collector Emitter Saturation Voltage
vs. Collector Current
(
BC857B
)
T = 25°C
A
T = -50°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
0
.5
IC
IB
=10
1
10
100
1000
110 100 1000
V = 5V
CE
h , DC CURRENT GAIN (NORMALIZED)
FE
I , COLLECTOR CURRENT (mA)
C
Fi
g
. 6, DC Current Gain vs. Collector Current
(
BC857B
)
T= 25°C
A
T= -50°C
A
T = 150°C
A
10
100
1000
110 100
f , GAIN BANDWIDTH PRODUCT (MHz)
t
I , COLLECTOR CURRENT (mA)
C
Fi
g
. 7, Gain Bandwidth Product vs Collector Current
(
BC857B
)
V= 5V
CE
