SPP11N80C3 CoolMOSTM Power Transistor Product Summary Features * New revolutionary high voltage technology * Extreme dv/dt rated V DS 800 V R DS(on)max @ Tj = 25C 0.45 64 nC Q g,typ * High peak current capability * Qualified according to JEDEC1) for target applications PG-TO220-3 * Pb-free lead plating; RoHS compliant * Ultra low gate charge * Ultra low effective capacitances CoolMOSTM 800V designed for: * Industrial application with high DC bulk voltage * Switching Application (i.e. active clamp forward) Type Package Marking SPP11N80C3 PG-TO220-3 11N80C3 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 C 11 T C=100 C 7.1 Pulsed drain current2) I D,pulse T C=25 C 33 Avalanche energy, single pulse E AS I D=2.2 A, V DD=50 V 470 Avalanche energy, repetitive t AR2),3) E AR I D=11 A, V DD=50 V 0.2 Avalanche current, repetitive t AR2),3) I AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg Mounting torque Rev. 2.91 Unit A mJ 11 A V DS=0...640 V 50 V/ns static 20 V AC (f >1 Hz) 30 T C=25 C 156 W -55 ... 150 C M3 and M3.5 screws page 1 60 Ncm 2011-09-27 SPP11N80C3 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Continuous diode forward current IS Value Unit 11 A T C=25 C Diode pulse current2) I S,pulse 33 Reverse diode dv /dt 4) dv /dt 4 V/ns Parameter Symbol Conditions Values Unit min. typ. max. - - 0.8 leaded - - 62 1.6 mm (0.063 in.) from case for 10s - - 260 C 800 - - V - 870 - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA Soldering temperature, T sold wave soldering only allowed at leads K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 A Avalanche breakdown voltage V (BR)DS V GS=0 V, I D=11 A Gate threshold voltage V GS(th) V DS=V GS, I D=0.68 mA 2.1 3 3.9 Zero gate voltage drain current I DSS V DS=800 V, V GS=0 V, T j=25 C - - 20 V DS=800 V, V GS=0 V, T j=150 C - 100 - A Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=7.1 A, T j=25 C - 0.39 0.45 V GS=10 V, I D=7.1 A, T j=150 C - 1.05 - f =1 MHz, open drain - 1.2 - Gate resistance Rev. 2.91 RG page 2 2011-09-27 SPP11N80C3 Parameter Values Symbol Conditions Unit min. typ. max. - 1600 - - 65 - - 50 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Effective output capacitance, energy C o(er) related5) V GS=0 V, V DS=100 V, f =1 MHz pF V GS=0 V, V DS=0 V to 480 V Effective output capacitance, time related6) C o(tr) - 140 - Turn-on delay time t d(on) - 25 - Rise time tr - 15 - Turn-off delay time t d(off) - 72 - Fall time tf - 10 - Gate to source charge Q gs - 8 - Gate to drain charge Q gd - 30 - Gate charge total Qg - 64 85 Gate plateau voltage V plateau - 5.5 - V - 1 1.2 V - 550 - ns - 10 - C - 33 - A V DD=400 V, V GS=0/10 V, I D=11 A, R G=7.5 ? , T j=25 C ns Gate Charge Characteristics V DD=640 V, I D=11 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm V GS=0 V, I F=I S=11 A, T j=25 C V R=400 V, I F=I S=11 A, di F/dt =100 A/s 1) J-STD20 and JESD22 2) Pulse width t p limited by T j,max 3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 4) ISD=ID, di/dt=200A/s, VDClink = 400V, Vpeak<V(BR)DSS, Tj<Tjmax , identical low side and high side switch 5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Rev. 2.91 page 3 2011-09-27 SPP11N80C3 1 Power dissipation 2 Safe operating area P tot=f(T C) I D=f(V DS); T C=25 C; D =0 parameter: t p 102 160 limited by on-state resistance 140 120 10 s 1 s 101 100 s I D [A] P tot [W] 100 80 1 ms DC 10 ms 60 0 10 40 20 10-1 0 0 25 50 75 100 125 1 150 10 100 1000 V DS [V] T C [C] 3 Max. transient thermal impedance 4 Typ. output characteristics ZthJC=f(tP) I D=f(V DS); T j=25 C; t p=10 s parameter: D=t p/T parameter: V GS 100 40 20 V 0.5 30 10 V 0.1 10-1 I D [A] Z thJC [K/W] 0.2 0.05 20 6V 0.02 5.5 V 0.01 10 single pulse 5V 4.5 V 10-2 10-5 0 10-4 10-3 10-2 10-1 t p [s] Rev. 2.91 0 5 10 15 20 25 V DS [V] page 4 2011-09-27 SPP11N80C3 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D=f(V DS); T j=150 C; t p=10 s R DS(on)=f(I D); T j=150 C parameter: V GS parameter: V GS 21 2 20 V 10 V 18 1.8 6V 15 I D [A] R DS(on) [] 5.5 V 12 9 5V 1.6 10 V 6.5 V 1.4 20 V 6V 6 4.5 V 4V 1.2 4.5 V 5V 3 0 1 0 5 10 15 20 0 25 5 10 15 20 25 30 I D [A] V DS [V] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on)=f(T j); I D=7.1 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max; t p=10 s parameter: T j 1.2 40 25 C 1 30 I D [A] R DS(on) [] 0.8 0.6 98 % 150 C 20 typ 0.4 10 0.2 0 0 -60 -20 20 60 100 140 180 T j [C] Rev. 2.91 0 2 4 6 8 10 V GS [V] page 5 2011-09-27 SPP11N80C3 9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=11 A pulsed I F=f(V SD); t p=10 s parameter: V DD parameter: T j 102 10 150C (98%) 8 160 V 25 C 640 V 25C (98C) 101 6 I F [A] V GS [V] 150 C 4 100 2 10-1 0 0 10 20 30 40 50 60 0 70 0.5 1 Q gate [nC] 1.5 2 V SD [V] 11 Avalanche energy 12 Drain-source breakdown voltage E AS=f(T j); I D=2.2 A; V DD=50 V V BR(DSS)=f(T j); I D=0.25 mA 500 960 920 400 880 E AS [mJ] V BR(DSS) [V] 300 200 840 800 760 100 720 0 680 25 50 75 100 125 150 T j [C] Rev. 2.91 -60 -20 20 60 100 140 180 T j [C] page 6 2011-09-27 SPP11N80C3 13 Typ. capacitances 14 Typ. Coss stored energy C =f(V DS); V GS=0 V; f =1 MHz E oss= f(V DS) 104 12 10 Ciss 103 E oss [J] C [pF] 8 102 Coss 6 4 101 Crss 2 100 0 0 100 200 300 400 500 600 700 800 V DS [V] Rev. 2.91 0 100 200 300 400 500 600 700 800 V DS [V] page 7 2011-09-27 SPP11N80C3 Definition of diode switching characteristics Rev. 2.91 page 8 2011-09-27 SPP11N80C3 PG-TO220-3: Outline Dimensions in mm/inches Rev. 2.91 page 9 2011-09-27 SPP11N80C3 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.91 page 10 2011-09-27