Si4410BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.0135 at VGS = 10 V 10 0.020 at VGS = 4.5 V 8 * Halogen-free According to IEC 61249-2-21 Definition * TrenchFET(R) Power MOSFET * 100 % Rg Tested * Compliant to RoHS Directive 2002/95/EC APPLICATIONS * Battery Switch * Load Switch SO-8 D S 1 8 D S 2 7 D S 3 6 D 5 D G 4 G Top View S Ordering Information: Si4410BDY-T1-E3 (Lead (Pb)-free) Si4410BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150 C)a TA = 25 C TA = 70 C Continuous Source Current (Diode Conduction)a IS TA = 25 C TA = 70 C PD 7.5 8 6 50 2.3 1.26 2.5 1.4 1.6 0.9 TJ, Tstg Operating Junction and Storage Temperature Range V 10 IDM Pulsed Drain Current (10 s Pulse Width) Maximum Power Dissipationa ID Unit - 55 to 150 A W C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t 10 s Steady State Steady State RthJA RthJF Typical Maximum 40 50 70 90 25 30 Unit C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 72211 S09-0705-Rev. D, 27-Apr-09 www.vishay.com 1 Si4410BDY Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Symbol Test Conditions Min. 1.0 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = 250 A 3.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = 20 V 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 C 5 On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea VDS 5 V, VGS = 10 V RDS(on) Forward Transconductancea A 20 A VGS = 10 V, ID = 10 A 0.011 0.0135 VGS = 4.5 V, ID = 5 A 0.0165 0.020 gfs VDS = 15 V, ID = 10 A 25 VSD IS = 2.3 A, VGS = 0 V 0.76 1.1 Gate Charge Qg VDS = 15 V, VGS = 5 V, ID = 10 A 13 20 25 40 VDS = 15 V, VGS = 10 V, ID = 10 A 5.5 Diode Forward Voltage a S V Dynamicb Total Gate Charge Qgt Gate-Source Charge Qgs Gate-Drain Charge Qgd 3.7 Rg Gate Resistance f = 1 MHz 0.5 td(on) Turn-On Delay Time VDD = 25 V, RL = 25 ID 1 A, VGEN = 10 V, Rg = 6 tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC IF = 2.3 A, dI/dt = 100 A/s 1.6 2.7 10 15 10 15 40 60 15 25 35 70 ns Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 50 50 VGS = 10 V thru 5 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 30 4V 20 30 20 TC = 125 C 10 10 25 C 2V 0 0.0 - 55 C 3V 0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 3.5 4.0 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 72211 S09-0705-Rev. D, 27-Apr-09 Si4410BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 0.030 2000 Ciss 1600 C - Capacitance (pF) R DS(on) - On-Resistance () 0.025 0.020 VGS = 4.5 V 0.015 VGS = 10 V 0.010 1200 800 Coss 400 0.005 Crss 0.000 0 0 10 20 30 40 50 0 18 24 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Capacitance 30 2.0 VDS = 15 V ID = 10 A 8 VGS = 10 V ID = 10 A 6 4 (Normalized) 1.6 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 12 On-Resistance vs. Drain Current 10 2 1.2 0.8 0.4 0 0 5 10 15 20 0.0 - 50 25 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (C) Qg - Total Gate Charge (nC) On-Resistance vs. Junction Temperature Gate Charge 0.10 R DS(on) - On-Resistance () 50 I S - Source Current (A) 6 TJ = 150 C 10 TJ = 25 C 0.08 ID = 10 A 0.06 0.04 0.02 0.00 1 0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 72211 S09-0705-Rev. D, 27-Apr-09 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si4410BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 0.6 50 0.4 ID = 250 A 40 0.0 Power (W) VGS(th) Variance (V) 0.2 - 0.2 - 0.4 30 TA = 25 C 20 - 0.6 10 - 0.8 - 1.0 - 50 - 25 0 25 50 75 100 125 150 0 10-2 10-1 1 TJ - Temperature (C) 10 100 600 Time (s) Single Pulse Power Threshold Voltage 100 100 s, 10 s I D - Drain Current (A) Limited by RDS(on)* 10 1 ms 10 ms 1 100 ms 0.1 0.01 0.1 1s TA = 25 C Single Pulse 10 s 100 s, DC 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 2. Per Unit Base = R thJA = 70 C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 t1 t2 10-3 4. Surface Mounted 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72211 S09-0705-Rev. D, 27-Apr-09 Si4410BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72211. Document Number: 72211 S09-0705-Rev. D, 27-Apr-09 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1