P2N2222ARL1 - ON Semiconductor

March, 2006 − Rev. 3

1Publication Order Number:

P2N2222A/D

P2N2222A

Amplifier Transistors

NPN Silicon

Features

•Pb−Free Packages are Available*

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Characteristic Symbol Value Unit

Collector−Emitter Voltage VCEO 40 Vdc

Collector−Base Voltage VCBO 75 Vdc

Emitter−Base Voltage VEBO 6.0 Vdc

Collector Current − Continuous IC600 mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25°C

PD625

5.0

mW/°C

Total Device Dissipation @ TC = 25°C

Derate above 25°C

PD1.5

mW/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg −55 to

+150

°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Ambient RqJA 200 °C/W

Thermal Resistance, Junction to Case RqJC 83.3 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TO−92

(T0−226AA)

CASE 29−11

STYLE 17

MARKING

DIAGRAM

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(Note: Microdot may be in either location)

123

P2N2

222A

AYWW G

P2N2 = Device Code

222A = Specific Device

A = Assembly Location

Y = Year

WW = Work Week

G= Pb−Free Package

P2N2222ARL1 TO−92

5000 Units / Bulk

P2N2222ARL1G TO−92

(Pb−Free)

5000 Units / Bulk

Device Package Shipping†

P2N2222A TO−92

2000 / Tape & Ammo

P2N2222AG TO−92

(Pb−Free)

2000 / Tape & Ammo

ORDERING INFORMATION

COLLECTOR

BASE

EMITTER

P2N2222AZL1 TO−92

P2N2222AZL1G TO−92

(Pb−Free)

2000 / Tape & Reel

2000 Units / Tube

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

P2N2222A

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = 10 mAdc, IB = 0)

V(BR)CEO 40 −Vdc

Collector−Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

V(BR)CBO 75 −Vdc

Emitter−Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO 6.0 −Vdc

Collector Cutoff Current

(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)

ICEX −10 nAdc

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0)

(VCB = 60 Vdc, IE = 0, TA = 150°C)

ICBO −

−

0.01

mAdc

Emitter Cutoff Current

(VEB = 3.0 Vdc, IC = 0)

IEBO −10 nAdc

Collector Cutoff Current

(VCE = 10 V)

ICEO −10 nAdc

Base Cutoff Current

(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)

IBEX −20 nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 0.1 mAdc, VCE = 10 Vdc)

(IC = 1.0 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc, TA = −55°C)

(IC = 150 mAdc, VCE = 10 Vdc) (Note 1)

(IC = 150 mAdc, VCE = 1.0 Vdc) (Note 1)

(IC = 500 mAdc, VCE = 10 Vdc) (Note 1)

hFE 35

100

−

300

−

Collector−Emitter Saturation Voltage (Note 1)

(IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

VCE(sat) −

−

0.3

1.0

Vdc

Base−Emitter Saturation Voltage (Note 1)

(IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

VBE(sat) 0.6

−

1.2

2.0

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (Note 2)

(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)C

fT300 −MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cobo −8.0 pF

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Cibo −25 pF

Input Impedance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hie 2.0

0.25

8.0

1.25

Voltage Feedback Ratio

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hre −

−

8.0

4.0

X 10−4

Small−Signal Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hfe 50

300

375

−

Output Admittance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hoe 5.0

200

mMhos

Collector Base Time Constant

(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)

rb′Cc−150 ps

Noise Figure

(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kW, f = 1.0 kHz)

NF−4.0 dB

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

2. fT is defined as the frequency at which |hfe| extrapolates to unity.

P2N2222A

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Max Unit

SWITCHING CHARACTERISTICS

Delay Time (VCC = 30 Vdc, VBE(off) = −2.0 Vdc,

IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1)

td−10 ns

Rise Time tr−25 ns

Storage Time (VCC = 30 Vdc, IC = 150 mAdc,

IB1 = IB2 = 15 mAdc) (Figure 2)

ts−225 ns

Fall Time tf−60 ns

Figure 1. Turn−On Time Figure 2. Turn−Off Time

SWITCHING TIME EQUIVALENT TEST CIRCUITS

Scope rise time < 4 ns

*Total shunt capacitance of test jig,

connectors, and oscilloscope.

+16 V

−2 V < 2 ns

1.0 to 100 ms,

DUTY CYCLE ≈ 2.0%

1 kW

+30 V

200

CS* < 10 pF

+16 V

−14 V

< 20 ns

1.0 to 100 ms,

DUTY CYCLE ≈ 2.0%

1 k

+30 V

200

CS* < 10 pF

−4 V

1N914

1000

100

200

300

500

700

1.0 k0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700

IC, COLLECTOR CURRENT (mA)

hFE, DC CURRENT GAINVCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

1.0

0.8

0.6

0.4

0.2

0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50

IB, BASE CURRENT (mA)

Figure 3. Collector Saturation Region

TJ = 125°C

TJ = 25°C

25°C

−55°C

IC = 1.0 mA 10 mA 150 mA 500 mA

VCE = 1.0 V

VCE = 10 V

Figure 4. DC Current Gain

P2N2222A

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Figure 5. Turn−On Time

IC, COLLECTOR CURRENT (mA)

100

200

t, TIME (ns)

10 20 70

5.0

100

5.0 7.0 30 50 200

7.0

IC/IB = 10

TJ = 25°C

tr @ VCC = 30 V

td @ VEB(off) = 2.0 V

td @ VEB(off) = 0

3.0

2.0

300 500

500

t, TIME (ns)

5.0

7.0

100

200

300

Figure 6. Turn−Off Time

IC, COLLECTOR CURRENT (mA)

10 20 70 1005.0 7.0 30 50 200 300 500

VCC = 30 V

IC/IB = 10

IB1 = IB2

TJ = 25°C

t′s = ts − 1/8 tf

Figure 7. Frequency Effects

f, FREQUENCY (kHz)

4.0

6.0

8.0

2.0

0.1

Figure 8. Source Resistance Effects

RS, SOURCE RESISTANCE (OHMS)

NF, NOISE FIGURE (dB)

1.0 2.0 5.0 10 20 50

0.2 0.5

100

NF, NOISE FIGURE (dB)

0.01 0.02 0.05

RS = OPTIMUM

RS = SOURCE

RS = RESISTANCE

IC = 1.0 mA, RS = 150 W

500 mA, RS = 200 W

100 mA, RS = 2.0 kW

50 mA, RS = 4.0 kW

f = 1.0 kHz

IC = 50 mA

100 mA

500 mA

1.0 mA

4.0

6.0

8.0

2.0

50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k

Figure 9. Capacitances

REVERSE VOLTAGE (VOLTS)

3.0

5.0

7.0

2.0

0.1

CAPACITANCE (pF)

1.0 2.0 3.0 5.0 7.0 10 20 30 50

0.2 0.3 0.5 0.7

Ccb

Ceb

Figure 10. Current−Gain Bandwidth Product

IC, COLLECTOR CURRENT (mA)

100

200

300

500

fT, CURRENT−GAIN BANDWIDTH PRODUCT (MHz)

1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

VCE = 20 V

TJ = 25°C

P2N2222A

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Figure 11. “On” Voltages

IC, COLLECTOR CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

V, VOLTAGE (VOLTS)

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = 10 V

Figure 12. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

−0.5

+0.5

COEFFICIENT (mV/ C)

−1.0

−1.5

−2.5

RqVC for VCE(sat)

RqVB for VBE

0.1 1.0 2.0 5.0 10 20 50

0.2 0.5 100 200 500 1.0 k

1.0 V

−2.0

0.1 1.0 2.0 5.0 10 20 500.2 0.5 100 200 500

P2N2222A

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PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

STYLE 17:

PIN 1. COLLECTOR

2. BASE

3. EMITTER

SECTION X−X

SEATING

PLANE

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.175 0.205 4.45 5.20

B0.170 0.210 4.32 5.33

C0.125 0.165 3.18 4.19

D0.016 0.021 0.407 0.533

G0.045 0.055 1.15 1.39

H0.095 0.105 2.42 2.66

J0.015 0.020 0.39 0.50

K0.500 −−− 12.70 −−−

L0.250 −−− 6.35 −−−

N0.080 0.105 2.04 2.66

P−−− 0.100 −−− 2.54

R0.115 −−− 2.93 −−−

V0.135 −−− 3.43 −−−

TO−92 (TO−226)

CASE 29−11

ISSUE AL

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P2N2222A/D

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