CREAT BY ART
- Glass passivated chip junction
- Ideal for automated placement
- Built-in strain relief
- Ultrafast recovery time for high efficiency
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
V
RRM
50 100 150 200 400 600 V
V
RMS
35 70 105 140 280 420 V
V
DC
50 100 150 200 400 600 V
I
F(AV)
A
Trr ns
R
θJL O
C/W
T
JO
C
T
STG O
C
Document Number: DS_D1405070 Version: F14
MUR305S thru MUR360S
Taiwan Semiconductor
Surface Mount Ultrafast Power Rectifiers
FEATURES
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case: DO-214AB (SMC) DO-214AB (SMC)
Polarity: Indicated by cathode band
Weight: 0.21 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25℃ unless otherwise noted)
MUR
340S
MUR
360S Unit
Maximum repetitive peak reverse voltage
PARAMETER SYMBOL MUR
305S
MUR
310S
MUR
315S
MUR
320S
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 3
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load I
FSM
75 A
Maximum instantaneous forward voltage (Note 1)
I
F
= 3 A, 25℃
I
F
= 3 A, 150℃
V
F
0.875
0.710
1.25
1.05
V
Typical thermal resistance 11
Maximum reverse current @ rated VR
T
J
=25 ℃
T
J
=150 ℃
I
R
μA
Maximum reverse recovery time (Note 2)
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
5
150
10
250
25 50
Operating junction temperature range - 55 to +175
Storage temperature range - 55 to +175
Note 1: Pulse test with PW=300μs, 1% duty cycle