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RHRG5060
50 A, 600 V, Hyperfast Diode
The RHRG5060 is a hyperfast diode with soft recovery
characteristics. It has the half recovery time of ultrafast
diodes and is silicon nitride passivated ionimplanted
epitaxial planar construction. These devices are
intended to be used as freewheeling/ clamping diodes
and diodes in a variety of switching power supplies and
other power switching applications. Their low stored
charge and hyperfast soft recovery minimize ringing and
electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Symbol
Features
• Hyperfast Recovery trr = 50 ns (@ IF = 50 A)
• Max Forward Voltage, VF = 2.1 V (@ TC = 25°C)
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER PACKAGE BRAND
RHRG5060 TO-247-2L RHRG5060
NOTE: When ordering, use the entire part number.
K
A
(BOTTOM
SIDE METAL)
ANODE
CATHODE
CATHODE
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RHRG5060 UNIT
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM 600 V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM 600 V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR600 V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IF(AV)
(TC = 93oC)
50 A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM
(Square Wave, 20 kHz)
100 A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM
(Halfwave, 1 Phase, 60 Hz)
500 A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD150 W
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL 40 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ-65 to 175 oC
Data Sheet November 2013
www.fairchildsemi.com1
©2001 Fairchild Semiconductor Corporation
RHRG5060 Rev. C1
Electrical Specificatio s TC = 25oC, Unless Otherwise Specified
SYMBOL TEST CONDITION MIN TYP MAX UNIT
VF- - 2.1 V
- - 1.7 V
IR- - 250 µA
- - 1.5 mA
trr --45ns
--50ns
ta- 25 - ns
tb- 20 - ns
Qrr - 65 - nC
CJ
IF = 50 A
IF = 50 A, TC = 150oC
VR = 600 V
VR = 600 V, TC = 150oC
IF = 1 A, dIF/dt = 100 A/µs
IF = 50 A, dIF/dt = 100 A/µs
IF = 50 A, dIF/dt = 100 A/µs
IF = 50 A, dIF/dt = 100 A/µs
IF = 50 A, dIF/dt = 100 A/µs
VR = 10 V, IF = 0 A- 140 - pF
RθJC - - 1.0 oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300 µs, D = 2%).
IR = Instantaneous reverse current.
Trr = Reverse recovery time (See Figure 9), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 9).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
Qrr = Reverse recovery charge.
CJ = Junction Capacitance.
RθJC = Thermal resistance junction to case.
pw = pulse width.
D = Duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
VF, FORWARD VOLTAGE (V)
1
300
10
0 0.5 2.5121.5
IF, FORWARD CURRENT (A)
3
25oC
175oC100oC
100
0 600400300200
100
0.01
0.1
1
10
1000
100 500
100oC
175oC
25oC
VR, REVERSE VOLTAGE (V)
IR, REVERSE CURRENT (µA)
3000
RHRG5060
www.fairchildsemi.com
2
©2001 Fairchild Semiconductor Corporation
RHRG5060 Rev. C1
IF, FORWARD CURRENT (A)
FIGURE 3. Trr, ta AND tb CURVES vs FORWARD CURRENT
IF, FORWARD CURRENT (A)
FIGURE 4. Trr, ta AND tb CURVES vs FORWARD CURRENT
IF, FORWARD CURRENT (A)
FIGURE 5. Trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Typical Performance Curves (Continued)
1
0
40
60
50
50
Trr
tb
30
ta
20
t, RECOVERY TIMES (ns)
10
10
TC = 25oC, dIF/dt = 100A/µs
ta
Trr
tb
1
0
100
150
125
50
75
50
t, RECOVERY TIMES (ns)
10
25
TC = 100oC, dIF/dt = 100A/µs
ta
Trr
1
0
250
50
150
100
t, RECOVERY TIMES (ns)
10
50 tb
200
TC = 175oC, dIF/dt = 100A/µs
50
10
0
100 125
75 175
150
20
30
40
DC
TC, CASE TEMPERATURE (oC)
SQ. WAVE
IF(AV), AVERAGE FORWARD CURRENT (A)
25 50
VR, REVERSE VOLTAGE (V)
200
100
0
300
0 50 100 150 200
CJ, JUNCTION CAPACITANCE (pF)
350
250
50
150
RHRG5060
www.fairchildsemi.com
3
©2001 Fairchild Semiconductor Corporation
RHRG5060 Rev. C1
Test Circuits and Waveforms
FIGURE 8. Trr TEST CIRCUIT
IRM
FIGURE 9. Trr WAVEFORMS AND DEFINITIONS
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
RG
L
VDD
IGBT
CURRENT
SENSE
DUT
VGE
t1
t2
VGE AMPLITUDE AND
t1 AND t2 CONTROL IF
RG CONTROL dIF/dt
+
-
dt
dIF
IF
Trr
tatb
0
0.25 IRM
DUT
CURRENT
SENSE
+
LR
VDD
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
-
VDD
Q1
IMAX = 1.4A
L = 40mH
IV
t0t1t2
IL
VAVL
t
IL
RHRG5060
www.fairchildsemi.com
4
©2001 Fairchild Semiconductor Corporation
RHRG5060 Rev. C1
RHRG5060 — Hyperfast Diode
©2001 Fairchild Semiconductor Corporation
RHRG5060 Rev. C1
www.fairchildsemi.com
5
Mechanical Dimensions
Figure 12. TO-247,Molded, 2LD, Jedec Option AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-002.
TO247-2L
RHRG5060 — Hyperfast Diode
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PRODUCT STATUS DEFINITIONS
Definition of Terms
AccuPower™
AX-CAP®*
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
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®*
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TriFault Detect™
TRUECURRENT®*
SerDes™
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Ultra FRFET™
UniFET™
VCX™
VisualMax™
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XS™
®
™
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Advance Information Formative / In Design Datasheet cont ains the design specifications for product development. Specifications
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Counterfeiting of se miconductor parts is a growing problem in th e industry. All ma nufactures of semiconductor p roducts are exper iencing counterfeiting of their
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Rev. I66
®
©2001 Fairchild Semiconductor Corporation
RHRG5060 Rev. C1www.fairchildsemi.com
6
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1
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