DSA 60 C 150 PB
advanced
Schottky Diode Gen ²
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
I
FSM
I
R
A
V
200
IA
V
F
0.93
R0.85 K/W
V
R
=
1 2 3
min.
30
t = 10 ms
Applications:
V
RRM
V
150
0.45
T
VJ
C=
T
VJ
°C=mA
5
Package:
Part number
V
R
=
T
VJ
C
I
F
=A
V
T
C
=150°C
d =
P
tot
175 WT
C
°C=
T
VJ
175 °C
-55
V
I
RRM
=
=150
30
30
T
VJ
=45°C
DSA 60 C 150 PB
V
A
150
V150
25
25
25
max. repetitive reverse voltage
reverse current
forward voltage
virtual junction temperature
total power dissipation
max. forward surge current
Conditions Unit
1.09
T
VJ
°C=25
C
J
j
unction capacitance V= V;12 T
125
V
F0
V
0.55
T
VJ
=175°C
r
F
6Ω
f = 1 MHz = °C25
m
V
0.80
T
VJ
C
I
F
=A
V
30
0.98
I
F
=A60
I
F
=A60
2x
threshold voltage
slope resistance for power loss calculation only
Backside: cathode
(50 Hz), sine
V
F
=0.80
V
Housing:
High Performance Schottky Diode
Low Loss and Soft Recovery
Common Cathode
TO-220
rIndustry standard outline
rEpoxy meets UL 94V-0
rRoHS compliant
RVJ
E
AS
5mJ
I
AS
=A;L =µH
I
AR
A
V
A
=1
f = 10 kHz1.5·V
R
typ.:
10 100
non-repetitive avalanche energy
repetitive avalanche current
T= °C25
VJ
mA
289 pF
thermal resistance junction to case
thJC
rectangular 0.5
Very low Vf
Extremely low switching losses
low Irm values
Improved thermal behaviour
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Rectifiers in switch mode power
supplies (SMPS)
Free wheeling diode in low voltage
converters
FAV
average forward current
FAV
125
IXYS reserves the right to change limits, conditions and dimensions. 20090302
Data according to IEC 60747and per diode unless otherwise specified
© 2009 IXYS all rights reserved
http://store.iiic.cc/
DSA 60 C 150 PB
advanced
I
RMS
A
per pin 35
R
thCH
K/W0.50
M
D
Nm0.6
mounting torque 0.4
T
stg
°C150
storage temperature -55
Weight g2
Symbol Definition Ratings
typ. max.min.Conditions
RMS current
thermal resistance case to heatsink
Unit
I is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
F
C
N60
mounting force with clip 20
Ordering Delivering Mode Base Qty Code Key
Standard Part Name
DSA 60 C 150 PB 509198Tube 50
XXXXXX
YYWW
Logo
Marking on product
DateCode
Assembly Code
abcdef
Product Marking
D
S
A
60
C
150
PB
Part number
Diode
Schottky Diode
low VF
Common Cathode
TO-220AB (3)
=
=
=
DSA50C150HB TO-247
Similar Part Package
1)
1)
Marking on Pr oduct
DSA60C150PB
150
Voltage class
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
RMS
IXYS reserves the right to change limits, conditions and dimensions. 20090302
Data according to IEC 60747and per diode unless otherwise specified
© 2009 IXYS all rights reserved
http://store.iiic.cc/
DSA 60 C 150 PB
advanced
Dim. Millimeter Inches
Min. Max. Min. Max.
A 12.70 13.97 0.500 0.550
B 14.73 16.00 0.580 0.630
C 9.91 10.66 0.390 0.420
D 3.54 4.08 0.139 0.161
E 5.85 6.85 0.230 0.270
F 2.54 3.18 0.100 0.125
G 1.15 1.65 0.045 0.065
H 2.79 5.84 0.110 0.230
J 0.64 1.01 0.025 0.040
K 2.54 BSC 0.100 BSC
M 4.32 4.82 0.170 0.190
N 1.14 1.39 0.045 0.055
Q 0.35 0.56 0.014 0.022
R 2.29 2.79 0.090 0.110
G
C
D
F
B
H
A
JK
L
Q
R
E
N
M
Outlines TO-220
IXYS reserves the right to change limits, conditions and dimensions. 20090302
Data according to IEC 60747and per diode unless otherwise specified
© 2009 IXYS all rights reserved
http://store.iiic.cc/