Advance Technical Information IXGR 32N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C; RGE = 1 M 1700 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25C 26 A IC90 TC = 90C 14 A 14 A 200 A IF90 ICM TC = 25C, 1 ms SSOA (RBSOA) VGE = 15 V, TVJ = 125C, RG = 5 Clamped inductive load tSC TJ = 125C, VCE = 1200 V; VGE = 15 V, RG = 10 10 PC TC = 25C 200 W -55 ... +150 C ICM = 70 @ 0.8 VCES TJ s 150 C Tstg -55 ... +150 C 22...130/5...30 N/lb 2500 ~V Mounting force with clamp VISOL 50/60 Hz, 1 minute Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s C 300 Weight 5 Symbol Test Conditions BVCES VGE(th) IC IC ICES VCE = 0.8 * VCES VGE = 0 V, Note 1 IGES VCE = 0 V, VGE = 20 V VCE(sat) IC = IT, VGE = 15 V Notes 2, 3 (c) 2005 IXYS All rights reserved g Characteristic Values (TJ = 25C unless otherwise specified) min. typ. max. = 1mA, VGE = 0 V = 250 A, VCE = VGE 1700 3.0 TJ = 125C TJ = 125C 4.2 5.0 = 1700 V = 26 A = 5.2 V = 50 ns ISOPLUS247 (IXGR) E153432 G G = Gate, E = Emitter C E ISOLATED TAB C = Collector, A TJM FC VCES IC25 VCE(sat) tfi(typ) 5.0 V V 100 3 A mA 100 nA 5.2 V V Features z Electrically Isolated tab z High current handling capability z MOS Gate turn-on - drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0 flammability classification Applications z Capacitor discharge & pulser circuits z AC motor speed control z DC servo and robot drives z DC choppers z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies DS99233A(05/05) IXGR Symbol Test Conditions gfs IC Characteristic Values (TJ = 25C unless otherwise specified) min. typ. max. = IT VCE = 10 V, Note 2 16 26 S 3670 pF 215 pF Cres 44 pF Qg 155 nC 26 nC 56 nC Cies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IT VGE = 15 V, VCE = 0.5 VCES Qgc Inductive load, TJ = 25C 46 ns tri IC = IT, VGE = 15 V 57 ns td(off) RG = 2.7 , VCE = 0.8 VCES Note 4 td(on) tfi 260 500 ns 50 100 ns Eoff td(on) tri Eon td(off) 1.5 2.6 mJ Inductive load, TJ = 125C 48 ns IC = IT, VGE = 15 V RG = 2.7 , VCE = 0.8 VCES Note 4 59 ns 5.0 mJ 300 ns tfi 70 ns Eoff 2.4 mJ 32N170AH1 ISOPLUS247 Outline 0.65 K/W RthJC RthCK 0.15 Reverse Diode (FRED) K/W Characteristic Values (TJ = 25C unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = 20A, VGE = 0 V, Note 2 VTO For conduction power losses only TJ = 150C 2.85 2.9 V V 2.1 V 40 m rFO TJ = 150C IRM IF = 20A, VGE = 0 V, VR = 1200 V -diF/dt = 450 A/s TJ = 125C 23 27 A A TJ = 125C 230 400 ns ns t rr 1.5 K/W RthJC Notes: 1. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. 2. Pulse test, t 300 s, duty cycle 2 % 3. Test current IT = 21 A 4. Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG. 5. See IXGH32N170A datasheets for additional IGBT characteristics. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692