Sep. 2009
MITSUBISHI HVIGBT MODULES
CM800DZB-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
●IC ................................................................... 800A
●VCES ....................................................... 1700V
●Insulated Type
●2-element in a Pack
●AISiC Baseplate
●Trench Gate IGBT : CSTBTTM
●Soft Reverse Recovery Diode
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
CM800DZB-34N
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM
G1 G2
E1
E1 E2
E2
C1
4 - M8 NUTS
6 - M4 NUTS
C2
C2
C1
114
31.5
5753
4440
28
14
20
30
140
130
16 18
5
11.85
55.2
11.5
35
5
57
±0.25
57
±0.25
124
±0.25
+2
0
6 - φ 7 MOUNTING HOLES
LABEL
screwing depth
min. 16.5
screwing depth
min. 7.7
38
+2
0
CIRCUIT DIAGRAM
E1
C1
G1
4(E1)
3(C1)
C2
E2
G2
2(C2)
1(E2)
Sep. 2009
2
MITSUBISHI HVIGBT MODULES
CM800DZB-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Symbol Item Conditions Ratings Unit
V
CES
VGES
IC
ICM
IE
IEM
Pc
Viso
Tj
Top
Tstg
tpsc
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current (Note 2)
Maximum power dissipation (Note 3)
Isolation voltage
Junction temperature
Operating temperature
Storage temperature
Maximum short circuit pulse width
VGE = 0V, Tj = 25°C
VCE = 0V, Tj = 25°C
DC, Tc = 80°C
Pulse (Note 1)
DC
Pulse (Note 1)
Tc = 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1 min.
VCC = 1000V, VCE ≤ VCES, VGE = 15V, Tj = 125°C
1700
± 20
800
1600
800
1600
5200
4000
–40 ~ +150
–40 ~ +125
–40 ~ +125
10
V
V
A
A
A
A
W
V
°C
°C
°C
µs
ELECTRICAL CHARACTERISTICS
Symbol Item Conditions
Tj = 25°C
Tj = 125°C
—
—
5.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.5
6.5
—
132
7.2
2.1
9.1
2.10
2.35
—
—
0.30
—
—
0.20
2.20
1.85
—
260
0.18
3
6
7.5
0.5
—
—
—
—
2.70
—
1.50
0.60
—
3.00
0.60
—
3.00
—
1.50
—
—
Ty p
Limits
MaxMin Unit
ICES
VGE(th)
IGES
Cies
Coes
Cres
Qg
VCE(sat)
td(on)
tr
Eon(10%)
td(off)
tf
Eoff(10%)
VEC
trr
Qrr
Erec(10%)
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Collector-emitter saturation
voltage
Tu r n-on delay time
Tu r n-on rise time
Tu r n-on switching energy
(Note 5)
Tu r n-off delay time
Tu r n-off fall time
Tu r n-off switching energy
(Note 5)
Emitter-collector voltage
(Note 2)
Reverse recovery time
(Note 2)
Reverse recovery charge
(Note 2)
Reverse recovery energy
(Note 2), (Note 5)
VCE = VCES, VGE = 0V
VCE = 10 V, IC = 80 mA, Tj = 25°C
VGE = VGES, VCE = 0V, Tj = 25°C
VCE = 10 V, VGE = 0 V, f = 100 kHz, Tj = 25°C
VCC = 900 V, IC = 800 A, VGE = ±15 V, Tj = 25°C
IC = 800 A (Note 4)
VGE = 15 V
VCC = 900 V, IC = 800 A, VGE = ±15 V
RG(on) = 1.6 Ω, Tj = 125°C, Ls = 150 nH
Inductive load
VCC = 900 V, IC = 800 A, VGE = ±15 V
RG(off) = 3.9 Ω, Tj = 125°C, Ls = 150 nH
Inductive load
IE = 800 A (Note 4)
VGE = 0 V
VCC = 900 V, IE = 800 A, VGE = ±15 V
RG(on) = 1.6 Ω, Tj = 125°C, Ls = 150 nH
Inductive load
mA
V
µA
nF
nF
nF
µC
V
µs
µs
J/P
µs
µs
J/P
V
µs
µC
J/P
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Sep. 2009
3
MITSUBISHI HVIGBT MODULES
CM800DZB-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
THERMAL CHARACTERISTICS
Symbol Item Conditions
—
—
—
—
—
18.0
24.0
36.0
—
Ty p
Limits
MaxMin Unit
R
th(j-c)Q
R
th(j-c)R
R
th(c-f)
Thermal resistance: IGBT part
Thermal resistance: FWDi part
Contact thermal resistance
Junction to Case, 1/2 module
Junction to Case, 1/2 module
Case to Fin, λ
grease
= 1W/m·K, D
(c-f)
= 100 µm,
1/2 module
K/kW
K/kW
K/kW
MECHANICAL CHARACTERISTICS
Symbol Item Conditions
7.0
3.0
1.0
—
600
19.5
32.0
—
—
—
—
—
1.0
—
—
—
18
0.30
13.0
6.0
2.0
—
—
—
—
—
—
Ty p
Limits
MaxMin Unit
M
t
M
s
M
t
m
CTI
d
a
d
s
L
P CE
R
CC’+EE’
Mounting torque
Mass
Comparative tracking index
Clearance
Creepage distance
Parasitic stray inductance
Internal lead resistance
M8: Main terminals screw
M6: Mounting screw
M4: Auxiliary terminals screw
T
c
= 25°C
N·m
N·m
N·m
kg
—
mm
mm
nH
mΩ
Note 1. Pulse width and repetition rate should be such that junction temperature (T
j
) does not exceed T
opmax
rating (125°C).
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (T
j
) should not exceed T
jmax
rating (150°C).
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. E
on(10%)
/ E
off(10%)
/ E
rec(10%)
are the integral of
0.1V
CE
x 0.1I
C
x dt.
Sep. 2009
4
MITSUBISHI HVIGBT MODULES
CM800DZB-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE (V)
COLLECTOR CURRENT (A)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE (V)
COLLECTOR CURRENT (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
EMITTER-COLLECTOR VOLTAGE (V)
EMITTER CURRENT (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT (A)
0
200
400
600
800
1000
1200
1400
1600
01 3245
6
01234
200
400
600
800
1000
1200
1400
1600
200
400
600
800
1000
1200
1400
1600
200
400
600
800
1000
1200
1400
1600
002 64810
12
0001234
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
V
GE
= 15V
V
CE
= 20V
T
j
= 125°C
V
GE
= 8V
V
GE
= 20V
V
GE
= 10V
V
GE
= 12V
V
GE
= 15V
Sep. 2009
5
MITSUBISHI HVIGBT MODULES
CM800DZB-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
0
0.2
0.4
0.6
0.8
1.0
1.2
0 400 800 1200 1600 20
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
051015
0246810121410
0
10
-1
23 57
10
1
10
2
23 57 23 57
CAPACITANCE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE (V)
CAPACITANCE (nF)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
GATE CHARGE (µC)
GATE-EMITTER VOLTAGE (V)
COLLECTOR CURRENT (A)
SWITCHING ENERGIES (J/P)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS
(TYPICAL)
-15
-10
-5
0
5
10
15
20
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS
(TYPICAL)
GATE RESISTANCE (Ω)
SWITCHING ENERGIES (J/P)
V
CC
= 900V, I
C
= 800A
V
GE
= ±15V, T
j
= 125°C
Inductive load
10
2
10
3
10
1
10
0
2
3
5
7
2
3
5
7
2
3
5
7
V
CE
= 900V, I
C
= 800A
T
j
= 25°C
E
rec
E
off
C
ies
C
oes
C
res
V
CC
= 900V, V
GE
= ±15V
R
G (on)
= 1.6Ω, R
G (off)
= 3.9Ω
T
j
= 125°C, Inductive load
E
on
V
GE
= 0V, T
j
= 25°C
f = 100kHz
E
rec
E
off
E
on
Sep. 2009
6
MITSUBISHI HVIGBT MODULES
CM800DZB-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
COLLECTOR CURRENT (A)
SWITCHING TIMES (µs)
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT (A)
REVERSE RECOVERY TIME (µs)
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CURRENT (A)
10
3
10
2
10
1
10
1
10
0
10
-1
2
3
5
7
2
3
5
7
10
0
10
1
10
-1
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
4
4
4
4
5
7
10
2
423 57423 57 10
4
10
3
10
2
423 57423 57 10
4
10
3
10
-2
10
-2
10
-3
23 57
10
-1
23 57
10
0
23 57
10
1
23 57
TIME (s)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
NORMALIZED TRANSIENT THERMAL IMPEDANCE
1.2
1.0
0.8
0.6
0.4
0
0.2
td(off)
td(on)
tf
tr
VCC = 900V, VGE = ±15V
RG (on) = 1.6Ω, RG (off) = 3.9Ω
Tj = 125°C, Inductive load
VCC = 900V, VGE = ±15V
RG (on) = 1.6Ω, Tj = 125°C
Inductive load
lrr
trr
Rth(j–c)Q = 24.0K/kW
Rth(j–c)R = 36.0K/kW
Sep. 2009
7
MITSUBISHI HVIGBT MODULES
CM800DZB-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
COLLECTOR-EMITTER VOLTAGE (V)
COLLECTOR CURRENT (A)
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
0
500
1000
1500
2000
COLLECTOR-EMITTER VOLTAGE (V)
COLLECTOR CURRENT (A)
SHORT CIRCUIT
SAFE OPERATING AREA
(SCSOA)
COLLECTOR-EMITTER VOLTAGE (V)
REVERSE RECOVERY CURRENT (A)
FREE-WHEEL DIODE REVERSE RECOVERY
SAFE OPERATING AREA
(RRSOA)
0 500 1000 1500 2000
500 1000 1500 2000
1000
600
800
200
400
00
0
5000
10000
15000
0 500 1000 1500 2000
V
CC
≤ 1200V, di/dt
≤ 3500A/µs
T
j
= 125°C
V
CC
≤ 1000V, V
GE
= ±15V
R
G (on)
≥ 1.6Ω, R
G (off)
≥ 3.9Ω
T
j
= 125°C, tpsc ≤ 10µs
V
CC
≤ 1200V, V
GE
= ±15V
T
j
= 125°C, R
G (off)
≥ 3.9Ω
