March 1998
FDT459N
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
Absolute Maximum Ratings TA = 25oC unless otherwise noted
Symbol Parameter FDT459N Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage - Continuous ±20 V
IDMaximum Drain Current - Continuous (Note 1a) 6.5 A
- Pulsed 20
PDMaximum Power Dissipation (Note 1a)3W
(Note 1b) 1.3
(Note 1c)1.1
TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 12 °C/W
* Order option J23Z for cropped center drain lead.
FDT459NRev.C
6.5 A, 30 V. RDS(ON) = 0.035Ω @ VGS = 10 V
RDS(ON) = 0.055 Ω @ VGS = 4.5 V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
SOIC-16
SuperSOTTM-3 SuperSOTTM-8 SO-8 SOT-223
SuperSOTTM-6
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance,
provide superior switching performance. These products are
well suited to low voltage, low current applications such as
notebook computer power management, battery powered
circuits, and DC motor control.
D
DS
G
D
S
G
© 1998 Fairchild Semiconductor Corporation
Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V
∆BVDSS/∆TJBreakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 o C33 mV/ oC
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1µA
TJ =55°C 10 µA
IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA
ON CHARACTERISTICS (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 11.6 2V
∆VGS(th)/∆TJGate Threshold Voltage Temp.Coefficient ID = 250 µA, Referenced to 25 oC-4.2 mV/ oC
RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 6.5 A0.031 0.035 Ω
TJ =125°C 0.044 0.06
VGS = 4.5 V, ID = 5.5 A0.046 0.055
ID(ON) On-State Drain Current VGS = 10 V, VDS = 5 V 20 A
gFS Forward Transconductance VDS = 10 V, ID = 6.5 A 16 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 15 V, VGS = 0 V,
f = 1.0 MHz 365 pF
Coss Output Capacitance 210 pF
Crss Reverse Transfer Capacitance 70 pF
SWITCHING CHARACTERISTICS (Note 2)
tD(on)Turn - On Delay Time VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω5.2 11 ns
trTurn - On Rise Time 8.2 16 ns
tD(off) Turn - Off Delay Time 6 12 ns
tfTurn - Off Fall Time 16 26 ns
QgTotal Gate Charge VDS = 10 V, ID = 6.5 A,
VGS = 10 V 12 17 nC
Qgs Gate-Source Charge 2.2 nC
Qgd Gate-Drain Charge 3nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
ISMaximum Continuous Drain-Source Diode Forward Current 2.5 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.5 A (Note 2)0.8 1.2 V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by
design while RθCA is determined by the user's board design.
Typical RθJA using the board layouts shown below on FR-4 PCB in a still air environment:
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDT459NRev.C
a. 42oC/W when mounted on a 1 in2 pad of
2oz Cu. b. 95oC/W when mounted on a 0.066 in2
pad of 2oz Cu. c. 110oC/W when mounted on a 0.00123
in2 pad of 2oz Cu.
FDT459NRev.C
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 3. On-Resistance Variation
with Temperature.
Figure 5. Transfer Characteristics.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
-50 -25 025 50 75 100 125 150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE ON-RESISTANCE
J
R NORMALIZED
DS(ON)
V = 10V
GS
I = 6.5A
D
012345
0
5
10
15
20
25
30
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
V = 10V
GS
DS
D
5.0
6.0
3.0
3.5
4.0
4.5
R , NORMALIZED
DS(ON)
0 5 10 15 20 25 30
0.5
1
1.5
2
2.5
3
3.5
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V = 3.5V
GS
D
5.0
4.0
10
4.5
6.0
2 4 6 8 10
0.02
0.04
0.06
0.08
0.1
0.12
0.14
V , GATE TO SOURCE VOLTAGE (V)
GS
R , ON-RESISTANCE (OHM)
DS(ON)
I = 6.5A
D
T = 125°C
J
25°C
1 2 3 4 5 6
0
5
10
15
20
25
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
V = 10V
DS
GS
D
T = -55°C
J
125°C 25°C
00.2 0.4 0.6 0.8 11.2 1.4
0.0001
0.001
0.01
0.1
1
20
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
25°C
-55°C
V = 0V
GS
SD
S
T = 125°C
J
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDT459NRev.C
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Typical Electrical Characteristics
0 2 4 6 8 10 12 14
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
V = 5V
DS
10V
I = 6.5A
D
15V
0.1 0.2 0.5 1 2 5 10 20 30 50
0.01
0.05
0.1
0.5
1
2
5
10
20
40
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
RDS(ON) LIMIT
D
A
DC
DS
1s
100ms
10ms
1ms
10s
V =10V
SINGLE PULSE
R = See Note 1c
T = 25°C
θJA
GS
A
100us
0.0001 0.001 0.01 0.1 110 100 300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
1 2
R (t) = r(t) * R
R = See Note 1c
T - T = P * R (t)
A
J
P(pk)
t
1 t
2
θJA
θJA
θJA
θJA
Figure 11. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in note 1c.
Transient thermal response will change depending on the circuit board design.
0.1 0.3 1 3 10 30
30
50
100
200
400
1000
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C
iss
f = 1 MHz
V = 0 V
GS
C
oss
C
rss
0.001 0.01 0.1 1 10 100 300
0
40
80
120
160
200
SINGLE PULSE TIME (SEC)
POWER (W)
SINGLE PULSE
R = see note 1c
T = 25°C
θJA
A
