Dirty Input
Clock
Dist.
PLL
LMK04000
(Clock Jitter Cleaner)
Clean
Reference
Clock
Ultra-Clean
Local Oscillator
LMX2541
(RF Synthesizer)
PLL
Product
Folder
Sample &
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Technical
Documents
Tools &
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LMX2541
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LMX2541 Ultra-Low Noise PLLatinum Frequency Synthesizer With Integrated VCO
1 Features 3 Description
The LMX2541 device is an ultra low-noise frequency
1 Multiple Frequency Options Available synthesizer which integrates a high-performance
(See Device Comparison Table)delta-sigma fractional N PLL, a VCO with fully
Frequencies From 31.6 MHz to 4000 MHz integrated tank circuit, and an optional frequency
Very Low RMS Noise and Spurs divider. The PLL offers an unprecedented normalized
noise floor of –225 dBc/Hz and can be operated with
–225 dBc/Hz Normalized PLL Phase Noise up to 104 MHz of phase-detector rate (comparison
Integrated RMS Noise (100 Hz to 20 MHz) frequency) in both integer and fractional modes. The
2 mRad (100 Hz to 20 MHz) at 2.1 GHz PLL can also be configured to work with an external
VCO.
3.5 mRad (100 Hz to 20 MHz) at 3.5 GHz
Ultra Low-Noise Integrated VCO The LMX2541 integrates several low-noise, high-
precision LDOs and output driver matching network to
External VCO Option (Internal VCO Bypassed) provide higher supply noise immunity and more
VCO Frequency Divider 1 to 63 (All Values) consistent performance, while reducing the number of
Programmable Output Power external components. When combined with a high-
quality reference oscillator, the LMX2541 generates a
Up to 104-MHz Phase Detector Frequency very stable, ultra low-noise signal.
Integrated Low-Noise LDOs The LMX2541 is offered in a family of 6 devices with
Programmable Charge Pump Output varying VCO frequency range from 1990 MHz up to 4
Partially Integrated Loop Filter GHz. Using a flexible divider, the LMX2541 can
Digital Frequency Shift Keying (FSK) Modulation generate frequencies as low as 31.6 MHz.
Pin The LMX2541 is a monolithic integrated circuit,
Integrated Reference Crystal Oscillator Circuit fabricated in a proprietary BiCMOS process. Device
Hardware and Software Power Down programming is facilitated using a three-wire
MICROWIRE interface that can operate down to 1.6
FastLock Mode and VCO-Based Cycle Slip volts. Supply voltage ranges from 3.15 V to 3.45 V.
Reduction The LMX2541 is available in a 36-pin 6-mm × 6-mm
Analog and Digital Lock Detect × 0.8-mm WQFN package.
1.6-V Logic Compatibility Device Information(1)
2 Applications VCO FREQUENCY
PART NUMBER PACKAGE (MHz)
Wireless Infrastructure (UMTS, LTE, WiMax) LMX2541SQ2060E WQFN (36) 1990 - 2240
Broadband Wireless LMX2541SQ2380E WQFN (36) 2200 - 2530
Wireless Meter Reading LMX2541SQ2690E WQFN (36) 2490 - 2865
Test and Measurement LMX2541SQ3030E WQFN (36) 2810 - 3230
FM Mobile Radio LMX2541SQ3320E WQFN (36) 3130 - 3600
space LMX2541SQ3740E WQFN (36) 3480 - 4000
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
System Block Diagram
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LMX2541
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Table of Contents
9.2 Functional Block Diagrams ..................................... 25
1 Features.................................................................. 19.3 Feature Description................................................. 26
2 Applications ........................................................... 19.4 Device Functional Modes........................................ 36
3 Description............................................................. 19.5 Programming........................................................... 37
4 Revision History..................................................... 29.6 Register Maps......................................................... 38
5 Device Comparison Table..................................... 310 Application and Implementation........................ 51
6 Pin Configuration and Functions......................... 410.1 Application Information.......................................... 51
7 Specifications......................................................... 610.2 Typical Application ............................................... 59
7.1 Absolute Maximum Ratings ...................................... 611 Power Supply Recommendations ..................... 61
7.2 ESD Ratings.............................................................. 612 Layout................................................................... 62
7.3 Recommended Operating Conditions....................... 612.1 Layout Guidelines ................................................. 62
7.4 Thermal Information.................................................. 612.2 Layout Example .................................................... 63
7.5 Electrical Characteristics........................................... 713 Device and Documentation Support................. 64
7.6 Timing Requirements.............................................. 11 13.1 Device Support...................................................... 64
7.7 Typical Characteristics............................................ 12 13.2 Trademarks........................................................... 64
8 Parameter Measurement Information ................ 23 13.3 Electrostatic Discharge Caution............................ 64
8.1 Bench Test Setups.................................................. 23 13.4 Glossary................................................................ 64
9 Detailed Description............................................ 25 14 Mechanical, Packaging, and Orderable
9.1 Overview................................................................. 25 Information........................................................... 64
4 Revision History
Changes from Revision I (February 2013) to Revision J Page
Added ESD Ratings table, Feature Description section, Device Functional Modes,Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section.................................................................................................. 1
Changes from Revision H (February 2013) to Revision I Page
Changed layout of National Data Sheet to TI format ........................................................................................................... 36
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5 Device Comparison Table
VCO LMX2541SQ2060E LMX2541SQ2380E LMX2541SQ2690E LMX2541SQ3030E LMX2541SQ3320E LMX2541SQ3740E
_DIV Fmin Fmax Fmin Fmax Fmin Fmax Fmin Fmax Fmin Fmax Fmin Fmax
1 1990.0 2240.0 2200.0 2530.0 2490.0 2865.0 2810.0 3230.0 3130.0 3600.0 3480.0 4000.0
2 995.0 1120.0 1100.0 1265.0 1245.0 1432.5 1405.0 1615.0 1565.0 1800.0 1740.0 2000.0
3 663.3 746.7 733.3 843.3 830.0 955.0 936.7 1076.7 1043.3 1200.0 1160.0 1333.3
4 497.5 560.0 550.0 632.5 622.5 716.3 702.5 807.5 782.5 900.0 870.0 1000.0
5 398.0 448.0 440.0 506.0 498.0 573.0 562.0 646.0 626.0 720.0 696.0 800.0
6 331.7 373.3 366.7 421.7 415.0 477.5 468.3 538.3 521.7 600.0 580.0 666.7
7 284.3 320.0 314.3 361.4 355.7 409.3 401.4 461.4 447.1 514.3 497.1 571.4
8 248.8 280.0 275.0 316.3 311.3 358.1 351.3 403.8 391.3 450.0 435.0 500.0
... ... ... ... ... ... ... ... ... ... ... ... ...
63 31.6 35.6 34.9 40.2 39.5 45.5 44.6 51.3 49.7 57.1 55.2 63.5
All devices have continuous frequency coverage below a divide value of 8 (7 for most devices) down to their
minimum frequency achievable with divide by 63. The numbers in bold show the upper end of this minimum
continuous frequency range. For instance, the LMX2541SQ3740E option offers continuous frequency coverage
from 55.2 MHz to 571.4 MHz and LMX2541SQ2060E offers continuous frequency coverage from 31.6 MHz to
280 MHz. If using the part in External VCO mode, all parts have roughly the same performance and any option
will do.
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GND
VccBias
L2
0
GND
36 35 34 33 32 31 30 29 28
27
26
25
24
23
22
21
20
19
10 11 12 13 14 15 16 17 18
1
2
3
4
5
6
7
8
9
VregRFout
VccRFout
VregVCO
VrefVCO
GND
CE
ExtVCOin
VccPLL1
OSCin
VccCP1
Vtune
VccCP2
CPout
FLout
Ftest/LD
VccPLL2
OSCin*
VccOSCin
RFoutEN
VccFRAC
VregFRAC
GND
Bypass
RFout
NC
LE
CLK
DATA
VccDiv
L1
Lmid
VccVCO
VccDig
LMX2541
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6 Pin Configuration and Functions
NJK Package
36-Pin WQFN
Top View
Pin Functions
PIN TYPE DESCRIPTION
NAME NO.
Bypass 30 Bypass Put a cap to the VccBias pin.
Chip Enable.
CE 11 CMOS The device needs to be programmed for this pin to properly power down the device.
MICROWIRE clock input. High impedance CMOS input.
CLK 33 High-Z Input This pin is used for the digital FSK modulation feature.
CPout 16 Output Charge pump output.
DATA 32 High-Z Input MICROWIRE serial data input. High impedance CMOS input.
Optional input for use with an external VCO.
ExtVCOin 12 RF Input This pin should be AC coupled if used or left open if not used.
FLout 17 Output Fastlock output.
Software controllable multiplexed CMOS output.
Ftest/LD 20 Output Can be used to monitor PLL lock condition.
GND 0 GND The DAP pad must be grounded.
GND 1 GND
GND 10 GND
GND 27 GND
L1 4 NC Do not connect this pin.
L2 6 NC Do not connect this pin.
LE 34 High-Z Input MICROWIRE Latch Enable input. High impedance CMOS input.
Lmid 5 NC Do not connect this pin.
NC 35 NC No connect.
Oscillator input signal. If not being used with an external crystal, this input should be AC
OSCin 21 High-Z Input coupled.
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Pin Functions (continued)
PIN TYPE DESCRIPTION
NAME NO.
Complementary oscillator input signal. Can also be used with an external crystal. If not
OSCin* 22 High-Z Input being used with an external crystal, this input should be AC coupled.
RFout 36 RF Output RF output. Must be AC coupled if used.
RFoutEN 24 Input Software programmable output enable pin.
VccBias 29 Supply Supply for Bias circuitry that is for the whole chip.
VccCP1 14 Supply Power supply for PLL charge pump.
VccCP2 18 Supply Power supply for PLL charge pump.
VccDig 28 Supply Supply for digital circuitry, such the MICROWIRE.
VccDiv 31 Supply Supply for the output divider
Supply
VccFRAC 25 Power Supply for the PLL fractional circuitry.
(LDO Input)
VccOSCin 23 Supply Supply for the OSCin buffer.
VccPLL1 13 Supply Power supply for PLL.
VccPLL2 19 Supply Power supply for PLL.
Supply
VccRFout 3 Supply for the RF output buffer.
(LDO Input)
Supply
VccVCO 7 Supply for the VCO.
(LDO Input)
VregFRAC 26 LDO Output Regulated power supply used for the fractional delta-sigma circuitry.
VregRFout 2 LDO Output LDO Output for RF output buffer.
VrefVCO 9 LDO Bypass LDO Bypass
VregVCO 8 LDO Output LDO Output for VCO
Vtune 15 High-Z Input Tuning voltage input to the VCO.
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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)(2)
MIN MAX UNIT
Vcc Power Supply Voltage –0.3 3.6 V
VIN Input Voltage to pins other than Vcc Pins –0.3 (Vcc + 0.3) V
(3)
TLLead Temperature (solder 4 sec.) 260 °C
Tstg Storage Temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
(3) Never to exceed 3.6 V.
7.2 ESD Ratings VALUE UNIT
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2500
Charged-device model (CDM), per JEDEC specification JESD22- ±1750
V(ESD) Electrostatic discharge V
C101(2)
Machine model (MM) ±400
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions MIN NOM MAX UNIT
Vcc Power Supply Voltage (All Vcc Pins) 3.15 3.3 3.45 V
TAAmbient Temperature –40 85 °C
7.4 Thermal Information LMX2541 LMX2541 LMX2541
SQ2060E SQ2060E SQ2060E
THERMAL METRIC(1) UNIT
9 Thermal 13 Thermal 16 Thermal
Vias(2) Vias(3) Vias(4)
RθJA Junction-to-ambient thermal resistance 31.7 30.3 29.8 °C/W
ψJT Junction-to-top characterization parameter 7.3 7.3 7.3
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) Recommended for Most Reliable Solderability.
(3) Compromise Between Solderability, Heat Dissipation, and Fractional Spurs.
(4) Recommended for Optimal Heat Dissipation and Fractional Spurs.
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7.5 Electrical Characteristics
(3.15 V VCC 3.45 V, -40°C TA85 °C; except as specified. Typical values are at Vcc = 3.3 V, 25 C.)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
CURRENT CONSUMPTION
Default Power VCO_DIV>1 170 204
Entire Chip Supply Current with
ICC Mode mA
all blocks enabled VCO_DIV=1 130 156
(1)
IPLL Current for External VCO Mode RFoutEN = LOW 72 94 mA
VCO_DIV >1
IDIV Current for Divider Only Mode Default Power Mode 84 110 mA
(1)
ICCPD Power Down Current CE = 0 V, Device Initialized 100 250 µA
OSCILLATOR (NORMAL MODE OPERATION WITH XO=0)
IIHOSC Oscillator Input High Current for VIH = 2.75 V 300 µA
in OSCin and OSCin*
IILOSCi Oscillator Input Low Current for VIL = 0 –100 µA
n OSCin and OSCin* pins OSC_2X = 1 5 52
OSCin Frequency Range
fOSCin MODE = 0 5 700 MHz
(2) OSC_2X = 0 MODE = 1 5 900
dvOSCin Slew Rate (2) 150 V/µs
Single-Ended 0.2 2.0
vOSCin Oscillator Sensitivity dvOSCin 150 V/µs Vpp
Differential 0.4 3.1
OSCILLATOR (CRYSTAL MODE WITH XO=1)
fXTAL Crystal Frequency Range VIH = 2.75 V 5 20 MHz
ESRXTA Crystal Equivalent Series This a requirement for the crystal, not a 100 Ω
LResistance characteristic of the LMX2541.
This requirement is for the crystal, not a
PXTAL Power Dissipation in Crystal 200 µW
characteristic of the LMX2541.
COSCin Input Capacitance of OSCin 6 pF
PLL
fPD Phase Detector Frequency 104 MHz
CPG = 1X 100
CPG = 2X 200
Charge Pump
ICPout CPG = 3X 300 µA
Output Current Magnitude ... ...
CPG=32X 3200
ICPoutTR CP TRI-STATE Current 0.4 V < VCPout < Vcc - 0.4 1 5 nA
I
ICPoutM Charge Pump VCPout = Vcc / 2 3% 10%
M Sink vs. Source Mismatch TA= 25°C
Charge Pump 0.4 V < VCPout < Vcc - 0.4
ICPoutV 4%
Current vs. CP Voltage Variation TA= 25°C
CP Current vs. Temperature
ICPoutT VCPout = Vcc / 2 8%
Variation CPG = 1X –116
Normalized PLL 1/f Noise dBc/Hz
LNPLL_flicker(10 kHz) CPG = 32X –124.5
LN(f)
(3) CPG = 1X –220.8
Normalized PLL Noise Floor dBc/Hz
LNPLL_flat(1 Hz) CPG = 32X –225.4
(1) The LMX2541 RFout power level is programmable with the program words of VCOGAIN, OUTTERM, and DIVGAIN. Changing these
words can change the output power of the VCO as well as the current consumption of the output buffer. For the purpose of consistency
in electrical specifications, "Default Power Mode" is defined to be the settings of VCOGAIN = OUTTERM = DIVGAIN = 12.
(2) Not tested in production. Specified by characterization. OSCin is tested only to 400 MHz.
(3) See Application and Implementation for more details on these parameters.
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Electrical Characteristics (continued)
(3.15 V VCC 3.45 V, -40°C TA85 °C; except as specified. Typical values are at Vcc = 3.3 V, 25 C.)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
RFout Buffer Enabled and VCO_DIV > 1 400 4000
fExtVCOin PLL Input Frequency MHz
RFout Buffer Disabled and VCO_DIV = 1 400 6000
fExtVCOin 4 GHz –15 10
pExtVCOi PLL Input Sensitivity dBm
n((2) applies to Max Limit Only) fExtVCOin > 4 GHz –5 10
VCO SPECIFICATIONS
2060E 1990 2240
2380E 2200 2530
Mode = Full Chip Mode 2690E 2490 2865
fVCO Internal VCO Frequency Range This is the frequency before the MHz
3030E 2810 3230
VCO divider. 3320E 3130 3600
3740E 3480 4000
Maximum Allowable Temperature
ΔTCL (2),(4) 125 °C
Drift for Continuous Lock 2060E 3.5
2380E 2.8
Maximum Frequency 2690E 1.6
pRFout RF Output Power Default Power Mode dBm
3030E 1.2
VCO_DIV=1 3320E 0.2
3740E –0.3
Fixed Temperature with 100 MHz frequency change 0.3
at the output
ΔPRFout Change in Output Power dB
Fixed frequency with a change over the entire 0.4
temperature range 2060E 13 - 23
The lower number in the range
applies when the VCO is at its 2380E 16 - 30
lowest frequency and the higher 2690E 17 - 32
number applies when the VCO
KVtune Fine Tuning Sensitivity MHz/V
is at its highest frequency. A 3030E 20 - 37
linear approximation can be 3320E 21 - 37
used for frequencies between
these two cases. 3740E 24 - 42
Default Power Mode VCO_DIV = 2 –20
Second Harmonic
HSRFout (1) dBc
(5) VCO_DIV = 3 –20
50 ΩLoad
Default Power Mode VCO_DIV = 2 3%
Duty Cycle Error
DERFout (1)
(5) VCO_DIV = 3 3%
50 ΩLoad
PSHVCO VCO Frequency Pushing CVregVCO = 4.7 µF, Open Loop 600 kHz/V
VCO_DIV = 1 ±800
VSWR 1.7 to 1
PULVCO VCO Frequency Pulling kHz
(6 dB Pad) VCO_DIV > 1 ±60
(4) Maximum Allowable Temperature Drift for Continuous Lock is how far the temperature can drift in either direction from the value it was
at the time that the R0 register was last programmed, and still have the device stay in lock. The action of programming the R0 register,
even to the same value, activates a frequency calibration routine. This implies that the device will work over the entire frequency range,
but if the temperature drifts more than the maximum allowable drift for continuous lock, then it will be necessary to reload the R0 register
to ensure that it stays in lock. Regardless of what temperature the device was initially programmed at, the temperature can never drift
outside the frequency range of -40°C TA85°C without violating specifications.
(5) The duty cycle error (DE) and second harmonic (HS) are theoretically related by the equation HS = 10·log| 2π·DE | - 6 dB. A square
wave with 3% duty cycle theoretically has a second harmonic of -20 dBc.
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Electrical Characteristics (continued)
(3.15 V VCC 3.45 V, -40°C TA85 °C; except as specified. Typical values are at Vcc = 3.3 V, 25 C.)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
2060E 1.6
Integration Bandwidth 2380E 1.8
= 100 Hz to 20 MHz
Middle VCO Frequency 2690E 2.1
σΦRMS Phase Error 100 MHz Wenzel Crystal mRad
3030E 2.1
Reference
Integer Mode 3320E 2.3
Optimized Loop Bandwidth 3740E 2.6
VCO PHASE NOISE(6)
10-kHz Offset –89.7
100-kHz Offset –113.7
fRFout =
Min VCO 1-MHz Offset –134.9
Frequency 10-MHz Offset –155.4
20-MHz Offset –160.3
Phase Noise
L(f)Fout dBc/Hz
2060E 10-kHz Offset –86.5
100-kHz Offset –111.4
fRFout =
Max VCO 1-MHz Offset –132.8
Frequency 10-MHz Offset –153.4
20-MHz Offset –158.5
10-kHz Offset –87.9
100-kHz Offset –112.7
fRFout =
Min VCO 1-MHz Offset –133.8
Frequency 10-MHz Offset –154.2
20-MHz Offset –159.5
Phase Noise
L(f)Fout dBc/Hz
2380E 10-kHz Offset –83.4
100-kHz Offset –109.1
fRFout =
Max VCO 1-MHz Offset –130.8
Frequency 10-MHz Offset –151.8
20-MHz Offset –157.5
10-kHz Offset –86.9
100-kHz Offset –111.8
fRFout =
Min VCO 1-MHz Offset –133.3
Frequency 10-MHz Offset –154.2
20-MHz Offset –159.4
Phase Noise
L(f)Fout dBc/Hz
2690E 10-kHz Offset –82.3
100-kHz Offset –108.4
fRFout =
Max VCO 1-MHz Offset –130.3
Frequency 10-MHz Offset –151.1
20-MHz Offset –156.7
(6) The VCO phase noise is measured assuming that the loop bandwidth is sufficiently narrow that the VCO noise dominates. The phase
noise is measured with AC_TEMP_COMP = 5 and the device is reloaded at each test frequency. The typical performance
characteristics section shows how the VCO phase noise varies over temperature and frequency.
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Electrical Characteristics (continued)
(3.15 V VCC 3.45 V, -40°C TA85 °C; except as specified. Typical values are at Vcc = 3.3 V, 25 C.)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
10-kHz Offset –86.1
100-kHz Offset –110.5
fRFout =
Min VCO 1-MHz Offset –132.0
Frequency 10-MHz Offset –152.2
20-MHz Offset –157.1
Phase Noise
L(f)Fout dBc/Hz
3030E 10-kHz Offset –82.2
100-kHz Offset –107.7
fRFout =
Max VCO 1-MHz Offset –129.4
Frequency 10-MHz Offset –150.5
20-MHz Offset –156.1
10-kHz Offset –84.1
100-kHz Offset –109.1
fRFout =
Min VCO 1-MHz Offset –130.7
Frequency 10-MHz Offset –151.6
20-MHz Offset –156.9
Phase Noise
L(f)Fout dBc/Hz
3320E 10-kHz Offset –82.0
100-kHz Offset –107.0
fRFout =
Max VCO 1-MHz Offset –128.5
Frequency 10-MHz Offset –149.6
20-MHz Offset –155.2
10-kHz Offset –83.9
100-kHz Offset –108.3
fRFout =
Min VCO 1-MHz Offset –129.9
Frequency 10-MHz offset –150.6
20-MHz Offset –156.5
Phase Noise
L(f)Fout dBc/Hz
3740E 10-kHz Offset –81.6
100-kHz Offset –106.5
fRFout =
Max VCO 1-MHz Offset –127.7
Frequency 10-MHz Offset –148.6
20-MHz Offset –154.2
DIGITAL INTERFACE (DATA, CLK, LE, CE, Ftest/LD, FLout,RFoutEN)
VIH High-Level Input Voltage 1.6 Vcc V
VIL Low-Level Input Voltage 0.4 V
IIH High-Level Input Current VIH = 1.75, XO = 0 –5 5 µA
IIL Low-Level Input Current VIL = 0 V , XO = 0 –5 5 µA
VOH High-Level Output Voltage IOH = 500 µA 2 V
VOL Low-Level Output Voltage IOL = -500 µA 0 0.4 V
ILeak Leakage Current Ftest/LD and FLout Pins Only –5 5 µA
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tCES tCS
D19 D18 D17 D16
tCH tCWH tCWL
D15 D0 C3 C2 C1 C0
MSB LSB
DATA
CLK
LE
tES
tEWH
LMX2541
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SNOSB31J JULY 2009REVISED DECEMBER 2014
7.6 Timing Requirements MIN NOM MAX UNIT
tCE Clock to Enable Low Time See Figure 1 25 ns
tCS Data to Clock Set Up Time See Figure 1 25 ns
tCH Data to Clock Hold Time See Figure 1 20 ns
tCWH Clock Pulse Width High See Figure 1 25 ns
tCWL Clock Pulse Width Low See Figure 1 25 ns
tCES Enable to Clock Set Up Time See Figure 1 25 ns
tEWH Enable Pulse Width High See Figure 1 25 ns
Figure 1. Serial Data Timing Diagram
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Offset (Hz)
Phase Noise (dBc/Hz)
1x1021x1031x1041x1051x106
-120
-117
-114
-111
-108
-105
-102
-99
-96
-93
-90
D001
Modeled Noise
Measured Noise
1/f Noise
Flat Noise
1X
CHARGE PUMP GAIN
-125
-121
-115
PLL NORMALIZED 1/f NOISE (dBc/Hz)
32X
-117
-119
-123
2X 4X 8X 16X
101
SLEW RATE (V/Ps)
-226
-218
-206
PLL NORMALIZED NOISE FLOOR (dBc/Hz)
102104
-210
-214
-222
103
1X
CHARGE PUMP GAIN
-226
-222
-216
PLL NORMALIZED NOISE FLOOR (dBc/Hz)
32X
-218
-220
-224
2X 4X 8X 16X
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7.7 Typical Characteristics
7.7.1 Not Ensured Characteristics
Figure 3. PLL Normalized Noise Floor vs Charge Pump
Figure 2. PLL Normalized Noise Floor vs OSCin Slew Rate Gain (Slew Rate = 2000 V/μs)
(KPD = 32X)
Figure 5. PLL Normalized 1/f Noise vs Charge Pump Gain
Figure 4. PLL Normalized 1/f Noise vs OSCin Slew Rate (Slew Rate = 2000 V/μs)
(KPD = 32X)
See Phase Noise Measurement Test Setup
Figure 6. PLL 1/f and Noise Floor Measurement of the LMX2541SQ3740E
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Offset (Hz)
Phase Noise (dBc/Hz)
1x1031x1041x1051x1061x1071x108
-160
-152
-144
-136
-128
-120
-112
-104
-96
-88
-80
D001
Offset (Hz)
Phase Noise (dBc/Hz)
5x1011x1022x1025x1021x1032x103
-162.5
-160
-157.5
-155
-152.5
-150
-147.5
-145
D001
LMX2541
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SNOSB31J JULY 2009REVISED DECEMBER 2014
Not Ensured Characteristics (continued)
Engaging the divider reduces the phase noise by 20 × The above plot shows how this noise floor changes as a function of
log(VCO_DIV) except at far offsets where it adds noise. the frequency of the RFout pin.
Figure 7. Divider Noise Floor vs Divider Value (fVCO = 3700 Figure 8. Divider Noise Floor vs Frequency
MHz, Various Values for VCO_DIV)
Table 1. Relative VCO Phase Noise Over Temperature Drift
(AC_TEMP_COMP = 24, Vcc = 3.3 V)(1)
TEMPERATURE PHASE NOISE CHANGE IN CELSIUS FOR VARIOUS OFFSETS
LOCK CURRENT 10 kHz 100 kHz 1 MHz 10 MHz 20 MHz
–40 –40 +0.4 –2.0 –1.6 –1.8 –1.6
–40 25 +0.3 +0.5 +0.5 +0.5 +0.4
–40 85 +0.9 +2.0 +2.4 +2.5 +2.3
25 –40 +0.2 –2.2 –1.7 –2.0 –1.8
25 25 This is the default condition to which these other numbers are normalized to.
25 85 +0.6 +1.5 +2.0 +2.0 +1.9
85 –40 +0.2 –2.2 –1.7 –1.9 –1.8
85 25 +0.2 +0.2 +0.3 +0.2 +0.2
85 85 +0.6 +1.8 +2.2 +2.3 +2.1
(1) The table shows the typical degradation for VCO phase noise when the VCO is locked at one temperature and the temperature is
allowed to drift to another temperature. A negative value indicates a phase noise improvement.
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1750 FREQUENCY (MHz)
-2
1
5
POWER (dBm)
2250 3750
3
0
2750 3250
TA = 85o C
4250
4
2
-1
TA = -40o C
TA = 25o C
1750
FREQUENCY (MHz)
-10
-2
6
POWER (dBm)
2250 3750
2
-6
2750 3250
VCOGAIN=3
VCOGAIN=9
VCOGAIN=6
4250
VCOGAIN=12
VCOGAIN=15
1750
FREQUENCY (MHz)
-2
1
5
POWER (dBm)
2250 3750
3
0
2750 3250
Vcc = 3.15V
4250
Vcc = 3.3V
Vcc = 3.45V
4
2
-1
1750 FREQUENCY (MHz)
-10
-2
6
POWER (dBm)
2250 3750
2
-6
2750 3250
OUTTERM=3
OUTTERM=9
OUTTERM=6
4250
OUTTERM=12
OUTTERM=15
LMX2541
SNOSB31J JULY 2009REVISED DECEMBER 2014
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7.7.2 Output Power in Bypass Mode
The following plots show the trends in output power as a function of temperature, voltage, and frequency. For
states where VCOGAIN and OUTTERM are not 12, the table below shows how the output power is modified
based on these programmable settings. The measurement of the output power is sensitive to the test circuit. All
the numbers in the electrical specifications and typical performance curves were obtained from a characterization
setup that accommodate temperature testing and changing of parts. In a more optimized setup the measured RF
output power is typically on the order of 1.5 to 2.4 dB higher.
Figure 9. Output Power vs Voltage (VCO_DIV = 1, Figure 10. Output Power vs OUTTERM and FREQUENCY
VCOGAIN = 12, OUTTERM = 12, TA= 25°C) (VCO_DIV = 1, TA= 25 °C, Vcc = 3.3 V, VCOGAIN = 12)
Figure 11. Output Power vs Temperature (VCO_DIV = 1, Figure 12. Output Power vs VCOGAIN and FREQUENCY
VCOGAIN = 12, OUTTERM = 12, Vcc = 3.3 V) (VCO_DIV = 1, TA= 25 °C, Vcc = 3.3 V, OUTTERM = 12)
Table 2. Change in Output Power in Bypass Mode as a Function of VCOGAIN and OUTTERM
VCOGAIN
3 6 9 12 15
3–9.7 –8.4 –7.9 –7.8 –7.9
6–6.6 –4.5 –3.6 –3.4 –3.6
OUTTERM 9 –5.7 –3.1 –1.7 –1.3 –1.3
12 –5.4 –2.5 –0.8 +0.0 +0.1
15 –5.3 –2.2 –0.3 +0.8 +1.1
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0
FREQUENCY (MHz)
1
4
9
POWER (dBm)
500 2000
6
3
1000 1500
TA = 85o C
2500
8
5
2
7
0
-1
TA = 25o C
TA = -40o C
0FREQUENCY (MHz)
-6
0
10
POWER (dBm)
500 2000
4
-2
1000 1500
DIVGAIN=3 2500
8
2
-4
DIVGAIN=6
DIVGAIN=9
DIVGAIN=15
DIVGAIN=12
6
-8
-10
0
FREQUENCY (MHz)
1
4
9
POWER (dBm)
500 2000
6
3
1000 1500
Vcc = 3.15 V
2500
8
5
2
Vcc = 3.3 V
Vcc = 3.45 V
7
0
-1
0FREQUENCY (MHz)
-6
0
10
POWER (dBm)
500 2000
4
-2
1000 1500
OUTTERM=3
2500
8
2
-4
OUTTERM=6
OUTTERM=9
OUTTERM=15
OUTTERM=12
6
-8
-10
LMX2541
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SNOSB31J JULY 2009REVISED DECEMBER 2014
7.7.3 Output Power in Divided Mode
The measurement of the output power is sensitive to the test circuit. All the numbers in the electrical
specifications and typical performance curves were obtained from a characterization setup that accommodate
temperature testing and changing of parts. In a more optimized setup the measured RF output power is typically
on the order of 1.5 to 2.4 dB higher.
Figure 13. Output Power vs Voltage (VCO_DIV > 1, Figure 14. Output Power vs OUTTERM and FREQUENCY
DIVGAIN = 12, OUTTERM = 12, TA= 25°C) (VCO_DIV > 1, TA= 25 °C, Vcc = 3.3 V, DIVGAIN = 12)
Figure 15. Output Power vs Temperature ( VCO_DIV > 1, Figure 16. Output Power vs DIVGAIN and
DIVGAIN = OUTTERM = 12, Vcc = 3.3 V) FREQUENCY(VCO_DIV > 1, TA= 25 °C, Vcc = 3.3 V,
OUTTERM = 12)
Table 3. Change in Output Power in Divided Mode as a Function of DIVGAIN and OUTTERM(1)
DIVGAIN
3 6 9 12 15
3–10.2 –6.1 –5.7 –5.5 –5.5
6–9.8 –4.4 –2.4 –2.1 –2.0
OUTTERM 9 –9.8 –4.3 –1.5 –0.7 –0.5
12 –9.9 –4.3 –1.4 +0.0 +0.2
15 –9.9 –4.4 –1.4 +0.3 +0.7
(1) The table shows the RELATIVE output power to the case of VCOGAIN = OUTTERM = 12.
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Start 30 MHz
Stop 5 GHz
Marker 1:
1 GHz
Marker 4:
4 GHz
Marker 3:
3 GHz
Marker 2:
2 GHz
24
3
12
1
VCO_DIV
= 1
VCO_DIV > 1
LMX2541
SNOSB31J JULY 2009REVISED DECEMBER 2014
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7.7.4 RFout Output Impedance
The impedance of the RFout pin varies as a function of frequency, VCO_DIV, OUTTERM, VCOGAIN, DIVGAIN, and
frequency. When in bypass mode (VCO_DIV = 1), the DIVGAIN word has no impact on the output impedance. When
in divided mode (VCO_DIV>1), the VCOGAIN has no impact on the output impedance. This graphic shows how the
input impedance varies as a function of frequency for both the bypass and divided cases.
Figure 17. RFout Output Impedance
Table 4. RFout Output Impedance vs. VCOGAIN (Bypass Mode)(1)
Freq. VCOGAIN=3 VCOGAIN=6 VCOGAIN=9 VCOGAIN=12 VCOGAIN=15
(MHz)
IMAGINA IMAGINA IMAGINA IMAGINA IMAGINA
REAL REAL REAL REAL REAL
RY RY RY RY RY
50 3.8 2.1 5.5 1.9 7.3 1.8 9.5 1.7 10.1 1.7
100 4.8 4.1 6.1 3.9 7.8 3.7 9.8 3.6 10.3 3.6
200 5.4 5.7 6.8 6.0 8.7 6.3 10.9 6.5 11.4 6.6
400 5.5 9.4 7.5 10.0 9.8 10.6 12.4 11.0 13.1 11.0
600 5.8 15.1 8.1 15.4 10.7 15.7 13.7 15.7 14.5 15.6
800 7.0 20.7 9.6 20.8 12.6 20.8 15.8 20.3 16.7 20.1
1000 9.2 26.3 12.1 26.1 15.4 25.6 19.0 24.6 19.8 24.1
1200 10.7 28.6 13.4 27.9 16.3 26.9 19.3 25.5 20.0 25.0
1400 12.2 30.9 14.7 29.7 17.1 28.2 19.7 26.4 20.2 25.9
1600 13.7 33.2 15.9 31.5 18.0 29.5 20.1 27.4 20.5 26.8
1800 15.2 35.5 17.2 33.3 18.8 30.8 20.5 28.3 20.7 27.7
2000 14.5 39.5 16.4 37.4 17.9 35.0 19.6 32.5 19.8 31.9
2200 15.6 42.9 17.4 40.7 18.7 38.2 20.3 35.6 20.4 35.0
2400 14.2 47.6 16.0 45.3 17.4 42.8 19.0 40.1 19.2 39.4
2600 12.2 51.3 14.1 48.7 15.6 46.5 17.2 43.5 17.3 42.5
2800 11.5 57.9 13.7 55.3 15.3 52.4 17.0 49.0 17.1 48.3
3000 10.6 67.1 13.1 64.0 14.8 60.5 16.3 56.5 16.4 55.7
3200 13.1 77.3 15.7 73.2 17.3 69.0 18.4 64.2 18.4 63.3
3400 17.6 88.1 20.0 82.8 21.1 77.4 21.7 71.8 21.5 70.8
3600 29.0 96.0 30.6 90.2 30.9 83.6 30.2 76.7 29.8 75.6
3800 38.2 99.4 38.0 94.4 36.4 87.3 34.1 80.5 33.4 79.4
(1) This is for the VCO divider in bypass mode (VCO_DIV=1) and the RFout pin powered up. OUTTERM was set to 12.
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RFout Output Impedance (continued)
Table 4. RFout Output Impedance vs. VCOGAIN (Bypass Mode)(1) (continued)
Freq. VCOGAIN=3 VCOGAIN=6 VCOGAIN=9 VCOGAIN=12 VCOGAIN=15
(MHz)
IMAGINA IMAGINA IMAGINA IMAGINA IMAGINA
REAL REAL REAL REAL REAL
RY RY RY RY RY
4000 43.5 106.0 41.6 99.0 38.9 92.0 35.5 85.1 34.8 83.7
4200 48.0 119.3 45.9 109.8 43.1 101.9 37.2 94.2 36.0 93.0
4400 62.4 137.9 56.4 126.6 49.8 117.6 42.3 109.5 40.8 108.3
4600 87.0 149.4 76.0 138.1 65.4 129.5 54.3 122.2 52.3 121.2
4800 128.1 153.7 109.7 145.6 93.0 140.1 76.7 135.9 74.0 135.5
5000 168.1 134.7 145.4 135.5 124.9 138.0 105.4 141.1 102.4 141.9
Table 5. RFout Output Impedance vs. OUTTERM (Bypass Mode)(1)
Freq. OUTTERM=3 OUTTERM=6 OUTTERM=9 OUTTERM=12 TERM=15
(MHz)
IMAGINA IMAGINA IMAGINA IMAGINA IMAGINA
REAL REAL REAL REAL REAL
RY RY RY RY RY
50 27.9 1.6 16.2 1.9 12.3 1.8 9.5 1.7 7.8 1.7
100 28.5 2.8 16.7 3.6 12.7 3.6 9.8 3.6 8.0 3.5
200 29.2 3.8 18.1 5.9 14.0 6.3 10.9 6.5 9.0 6.6
400 28.8 5.7 19.2 9.5 15.3 10.3 12.4 11.0 10.6 11.2
600 28.8 8.8 20.4 13.7 16.5 14.9 13.7 15.7 11.9 16.0
800 29.1 11.7 22.5 17.5 18.7 19.2 15.8 20.3 14.0 20.8
1000 28.6 13.4 22.8 19.2 19.3 21.2 16.5 22.5 14.6 23.1
1200 28.0 15.0 23.1 20.9 19.8 23.2 17.1 24.7 15.2 25.4
1400 27.5 16.7 23.3 22.7 20.4 25.2 17.7 26.9 15.8 27.7
1600 27.0 18.4 23.6 24.4 20.9 27.2 18.4 29.0 16.5 30.0
1800 26.4 20.1 23.9 26.1 21.4 29.2 19.0 31.2 17.1 32.3
2000 25.9 21.8 24.1 27.9 22.0 31.1 19.6 33.4 17.7 34.6
2200 25.3 23.5 24.4 29.6 22.5 33.1 20.3 35.6 18.3 36.9
2400 23.1 26.9 22.9 33.2 21.3 37.1 19.0 40.1 17.0 41.8
2600 20.1 29.3 20.5 35.4 19.3 39.6 17.2 42.9 15.1 44.9
2800 18.5 34.2 19.6 40.4 18.8 45.0 17.0 49.0 14.8 51.6
3000 16.6 40.6 18.1 46.9 17.8 51.9 16.3 56.5 14.3 59.7
3200 16.5 47.0 18.9 53.4 19.3 58.9 18.4 64.2 16.7 68.2
3400 17.1 53.8 20.4 60.1 21.8 65.8 21.7 71.8 20.4 76.6
3600 20.8 59.4 25.4 65.0 28.3 70.5 30.2 76.8 30.3 82.5
3800 22.0 64.9 27.3 69.7 31.1 74.6 34.1 80.5 35.4 86.1
4000 23.0 70.0 28.1 74.9 32.1 80.0 35.5 86.4 37.6 92.0
4200 23.7 77.9 28.6 82.8 32.8 87.7 37.0 94.2 39.9 100.9
4400 23.7 93.2 30.1 98.0 35.4 102.9 42.3 109.4 47.8 116.6
4600 27.3 107.4 36.6 112.0 44.8 116.3 54.3 122.2 62.6 128.9
4800 40.1 126.6 52.2 129.8 63.3 132.3 76.7 135.9 89.3 140.5
5000 61.4 142.8 76.2 143.3 89.5 142.3 105.5 141.0 121.0 140.5
(1) The VCO divider was bypassed (VCO_DIV = 1) and the RFout pin was enabled. The VCOGAIN word was set to 12.
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Table 6. RFout Output Impedance vs. DIVGAIN (Divided Mode)(1)
Freq. DIVGAIN=3 DIVGAIN=6 DIVGAIN=9 DIVGAIN=12 DIVGAIN=15
(MHz)
IMAGINAR IMAGINAR IMAGINAR IMAGINAR IMAGINAR
REAL REAL REAL REAL REAL
YYYYY
50 3.2 2.2 3.6 2.1 5.8 2.0 13.9 1.9 22.3 1.6
100 4.5 4.1 4.6 4.0 6.6 3.8 14.7 3.2 23.2 2.3
200 5.7 5.3 6.4 5.7 7.0 5.9 15.0 4.7 23.0 2.7
400 5.0 9.2 5.6 9.4 7.7 9.5 15.6 7.7 22.8 4.4
600 5.2 14.6 5.7 14.6 7.8 14.6 15.9 12.1 22.2 7.9
800 6.0 20.2 6.5 20.2 8.7 20.2 16.9 16.5 22.3 11.4
1000 7.9 25.7 8.4 25.7 10.7 25.5 18.7 20.5 22.9 14.6
1200 11.0 29.9 11.6 30.0 13.9 29.5 21.4 23.1 24.3 16.8
1400 13.2 32.3 13.9 32.3 16.1 31.7 22.5 24.3 23.9 18.2
1600 14.2 34.4 15.0 34.3 17.1 33.5 22.5 25.8 23.1 20.1
1800 13.9 37.2 14.6 37.0 16.7 36.2 21.6 28.2 21.7 22.9
2000 13.5 41.1 14.3 40.9 16.4 39.9 20.9 31.4 20.6 26.4
2200 14.8 45.1 15.6 44.7 17.8 43.6 21.7 34.5 20.9 29.7
2400 14.1 49.4 14.9 49.0 17.1 47.7 20.4 38.1 19.3 33.5
2600 12.4 52.1 13.2 51.6 15.5 50.1 18.2 40.4 16.8 36.2
2800 11.8 59.3 12.5 58.7 15.0 56.8 17.0 46.2 15.3 42.0
3000 10.7 68.3 11.5 67.6 14.0 65.2 15.2 53.4 13.0 49.2
3200 13.1 78.6 14.0 77.6 16.7 74.5 16.5 61.1 13.8 56.9
3400 18.1 89.6 18.9 88.4 21.6 84.4 19.4 69.2 16.0 65.1
3600 29.2 98.6 29.8 96.9 31.9 91.6 26.1 75.4 21.7 71.6
3800 36.0 105.8 36.5 103.9 37.8 97.5 28.9 81.1 24.0 77.8
4000 43.6 101.4 43.7 99.5 43.7 92.9 32.3 78.8 27.1 76.3
4200 40.6 122.9 40.8 120.3 40.6 111.8 26.6 94.7 20.7 91.8
4400 63.6 143.0 62.9 139.6 59.9 128.6 37.8 111.4 30.0 109.2
4600 90.9 155.3 88.8 151.4 81.1 139.6 49.9 125.8 40.3 124.9
4800 135.8 159.1 131.2 155.7 116.3 145.5 73.7 142.1 61.7 144.0
5000 179.4 135.1 173.2 133.9 153.3 131.4 107.1 147.7 94.5 155.2
(1) This was done with RFout buffer powered up and with OUTTERM=12. VCO_DIV was set to 50.
Table 7. RFout Output Impedance vs. OUTTERM (Divided Mode)(1)
Freq.(MHz) OUTTERM=3 OUTTERM=6 OUTTERM=9 OUTTERM=12 OUTTERM=15
IMAGINA IMAGINA IMAGINA IMAGINA IMAGINA
REAL REAL REAL REAL REAL
RY RY RY RY RY
50 44.1 –0.3 31.8 1.0 21.2 1.7 14.0 1.9 9.3 2.0
100 44.9 –2.2 32.8 0.7 22.1 2.5 14.8 3.2 10.0 3.5
200 43.2 –7.2 33.2 –1.2 23.3 2.8 16.1 4.7 11.3 5.6
400 33.2 –8.1 28.5 –1.5 21.9 4.5 15.7 7.7 11.2 9.1
600 28.0 –3.8 25.7 1.8 21.4 8.0 15.9 12.1 11.4 13.9
800 25.1 1.1 24.0 5.6 21.7 11.5 16.9 16.5 12.5 19.0
1000 23.7 5.8 23.3 9.6 22.4 14.7 18.7 20.5 14.6 23.8
1200 23.5 9.3 23.7 12.4 23.8 16.7 21.4 23.1 17.7 27.2
1400 22.6 12.3 22.9 14.8 23.5 18.1 22.5 24.3 19.5 28.9
1600 21.5 15.3 21.8 17.4 22.6 20.0 22.5 25.8 20.2 30.5
1800 20.2 18.8 20.5 20.7 21.3 22.8 21.6 28.2 19.7 33.0
(1) This was done in divided mode (VCO_DIV=50) with VCOGAIN=12.
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Table 7. RFout Output Impedance vs. OUTTERM (Divided Mode)(1) (continued)
Freq.(MHz) OUTTERM=3 OUTTERM=6 OUTTERM=9 OUTTERM=12 OUTTERM=15
2000 19.1 22.9 19.4 24.5 20.1 26.3 20.9 31.4 19.3 36.4
2200 19.4 26.4 19.7 28.0 20.5 29.6 21.7 34.5 20.6 39.8
2400 17.9 30.4 18.2 32.0 18.9 33.4 20.4 38.1 19.8 43.6
2600 15.7 33.3 15.9 34.9 16.5 36.1 18.2 40.4 17.9 45.7
2800 14.5 39.0 14.5 40.7 15.1 42.0 17.0 46.2 17.2 51.9
3000 12.7 46.1 12.6 47.9 12.9 49.2 15.2 53.4 15.8 59.5
3200 13.5 53.5 13.3 55.5 13.8 56.9 16.5 61.1 18.0 67.8
3400 15.5 61.3 15.4 63.5 15.9 65.0 19.4 69.2 22.0 76.5
3600 20.9 67.5 21.1 70.0 21.7 71.5 26.1 75.4 30.5 82.8
3800 22.7 73.3 23.1 76.0 23.9 77.6 28.9 81.1 34.7 88.2
4000 25.4 71.7 26.2 74.5 27.1 76.1 32.3 78.8 39.0 84.7
4200 19.0 86.1 19.8 89.5 20.7 91.4 26.6 94.7 34.6 101.8
4400 26.6 102.0 28.3 106.3 29.9 108.7 37.8 111.4 49.4 118.0
4600 34.9 116.4 37.8 121.5 40.1 124.1 49.8 125.9 65.3 130.6
4800 52.1 134.8 57.4 140.3 61.1 143.1 73.7 141.9 93.8 141.8
5000 78.5 147.4 87.4 152.0 93.3 154.0 107.2 148.0 129.0 138.6
7.7.4.1 OSCin and Fin Sensitivity
This chart shows the typical sensitivity for a sine wave. Note that at lower frequencies, there is a constant
slope that suggests that the part fails when the slew rate falls below 27 V/us. The electrical specifications
call for a minimum of 150 V/us to ensure margin. Also, as some of the other performance graphs show, the
OSCin slew rate has an impact on fractional spurs and phase noise as well. It is recommended to design to
the electrical specifications, not the typical performance plots.
Variation over voltage and temperature is typically very small and on the order than less ±1 dB.
Figure 18. OSCin Sensitivity for Single-Ended SINE Wave
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Start 50 MHz
Stop 1000 MHz
Marker 1:
50 MHz
Marker 4:
1000 MHz
Marker 3:
500 MHz
Marker 2:
100 MHz
2
3
4
4
3
1
2
XO = 0
XO = 1
0 7000
fExtVCOin (MHz)
20
10
0
-10
-20
-30
-40
pEXTVCOin (dBm)
50003000
TA = -40oC
1000 2000 4000 6000
TA = 85oC
TA = 25oC
8000
Ensured Operating Range
LMX2541
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This plot shows the ExtVCOin sensitivity which applies only when the device is being used in External VCO
mode.
Variation over voltage is typically very small and on the order of less than ± 1 dB.
Figure 19. SINE wave ExtVCOin Sensitivity
Figure 20. OSCin Input Impedance
Table 8. OSCin Frequency
FREQUENCY OSCin (NORMAL MODE) OSCin (XO MODE) OSCin# (NORMAL MODE)
(MHz)
REAL IMAGINARY REAL IMAGINARY REAL IMAGINARY
1 3945.3 2261.6 9452.3 2182.1 3975.5 2287.0
5 4846.0 –189.6 2397.9 –916.7 4890.1 –150.1
10 4253.4 –1850.1 428.2 –1105.7 4297.4 –1886.7
20 2295.3 –2366.9 248.4 –591.8 2288.6 –2383.8
30 1290.0 –2087.0 187.1 –410.1 1304.3 –2079.1
40 847.9 –1716.1 163.5 –313.3 855.5 –1718.0
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Start 100 MHz Stop 7000 MHz
Marker 1:
100 MHz
Marker 4:
3 GHz
Marker 3:
2 GHz
Marker 2:
1 GHz
7
1
6
Marker 7:
6 GHz
Marker 6:
5 GHz
Marker 5:
4 GHz
Marker 8:
7 GHz
8
5
43
2
LMX2541
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SNOSB31J JULY 2009REVISED DECEMBER 2014
Table 8. OSCin Frequency (continued)
FREQUENCY OSCin (NORMAL MODE) OSCin (XO MODE) OSCin# (NORMAL MODE)
(MHz)
50 581.3 –1464.9 147.9 –257.1 590.7 –1471.6
60 439.2 –1254.1 138.3 –219.0 449.4 –1264.2
70 337.9 –1105.7 131.1 –192.0 349.0 –1115.4
80 269.4 –983.6 127.0 –171.8 276.3 –989.1
90 223.4 –869.9 119.7 –158.0 231.9 –876.2
100 179.2 –776.8 114.5 –143.9 186.9 –783.9
200 52.4 –379.8 93.9 –85.1 54.3 –382.5
300 31.2 –247.0 80.9 –68.9 31.9 –247.4
400 23.5 –181.7 72.3 –58.1 23.8 –180.5
500 20.4 –140.5 65.1 –49.4 20.4 –138.4
600 18.4 –110.2 58.1 –42.1 18.2 –107.6
700 17.0 –88.0 51.9 –35.6 16.7 –85.3
800 15.8 –71.2 47.4 –29.5 15.7 –68.4
900 15.2 –57.6 43.6 –23.4 14.7 –56.3
1000 15.1 –45.2 40.9 –17.2 14.3 –44.7
Figure 21. ExtVCOin Input Impedance
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Table 9. ExtVCOin Frequency
FREQUENCY REAL IMAGINARY
100 627.9 –1532.3
200 193.8 –852.6
400 56.4 –434.5
600 31.3 –287.4
800 23.2 –212.9
1000 17.8 –167.0
1200 15.4 –134.9
1400 14.0 –111.4
1600 12.8 –93.7
1800 11.8 –79.5
2000 11.2 –67.5
2200 10.7 –57.4
2400 10.2 –48.6
2600 10.5 –42.0
2800 9.1 –35.5
3000 7.8 –29.0
3200 7.2 –23.4
3400 6.6 –18.3
3600 5.9 –13.3
3800 5.3 –8.5
4000 5.0 –3.7
4200 4.5 –1.4
4400 4.0 0.9
4600 3.5 3.1
4800 2.6 7.7
5000 1.7 12.1
6000 0.9 26.7
7000 2.3 51.9
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DC
Blocking
Capacitor
Signal Generator
Semiconductor
Parameter
Analyzer
SMA Cable
10 MHz
Device
Under
Test
Evaluation Board
SMA Cable
Power Supply
3.3 V
CPout
Pin
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8 Parameter Measurement Information
8.1 Bench Test Setups
Figure 22. Charge Pump Currents Test Setup
The charge pump is tested in external VCO mode (MODE=1), although it is no external VCO hooked up. The
CPout pin should be disconnected from the any external VCO tuning pin, external loop filter, and also the Vtune
pin on the device. A signal is then applied to the OSCin pin to ensure that the R counter is oscillating. This signal
does not have to be clean and the frequency is very critical. These currents at the CPout pin are typically
measured with a semiconductor parameter analyzer.
8.1.1 Charge Pump Current Measurements
In order to test the TRI-STATE current, the CPT bit is set to one and the current is measured. Aside from having
no other sources of leakage attached to this pin, it is also important that the board be well cleaned before doing
this test. The temperature and voltage at the charge pump can then be varied and the resulting leakage current
is then recorded. Typically, the leakage currents are worst at higher temperatures and higher charge pump
voltages.
In order to test the source and sink currents, the CPT bit is set to active mode and the frequency is programmed
to something much higher than can be achieved in order to force the charge pump to rail. The reason why this is
necessary is that the duty cycle of the charge pump is not 100% unless it is forced against one of the rails. If the
charge pump polarity bit (CPP) is set to positive, then the charge pump source current is measured. To measure
the sink current, the CPT bit is set to negative. The part is then programmed and the charge pump will rail in one
direction. The semiconductor parameter analyzer measures the current at a particular charge pump voltage. The
phase detector polarity bit, CPP, can be toggled to test between the negative and positive charge pump gains. In
order to test leakage, set the TRI-STATE bit, CPT, to 1 so that this can be measured. For the most accurate
measurements, it is desirable that the CPout and Vtune pin are not shorted together for these measurements.
Once these currents are measured, then the datasheet parameters can be calculated.
A summary of these charge pump tests is given in the table below.
MEASUREMENT PLL_R PLL_N CPG CPT CPP
Leakage Current X X X 1 (TRI-STATE) X
Source Current 1 4000 0 - 31 0 (Active) 1 (Positive)
Sink Current 1 4000 0 - 31 0 (Active) 0 (Negative)
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8.1.2 Charge Pump Current Definitions
Figure 23. Charge Pump Current Definitions
I1 = Charge Pump Sink Current at VCPout = Vcc - ΔV
I2 = Charge Pump Sink Current at VCPout = Vcc/2
I3 = Charge Pump Sink Current at VCPout =ΔV
I4 = Charge Pump Source Current at VCPout = Vcc - ΔV
I5 = Charge Pump Source Current at VCPout = Vcc/2
I6 = Charge Pump Source Current at VCPout =ΔV
ΔV = Voltage offset from the positive and negative supply rails. Defined to be 0.4 volts for this part.
Figure 24. Variation of Charge Pump Current Magnitude vs. Charge Pump Voltage
Figure 25. Variation of Charge Pump Current Magnitude vs. Temperature
Figure 26. Charge Pump Sink vs. Source Current Mismatch
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VCO
VREG Charge
Pump
Fast
Lock
I
DATA
CLK
LE
CE
FRAC
VREG
VregVCO
VrefVCO
OSCin
OSCin*
RFout
Vtune
CPout
FLout
Ftest/LD
MUX
2-63
Divider Modulus
Control
4/5
Prescaler
Comp
N Divider
RFoutEN
VregFRAC
2X
R
Divider
MUX Serial Interface
Control
ExtVCOin
RFout
VREG
Dirty Input
Clock
Dist.
PLL
LMK04000
(Clock Jitter Cleaner)
Clean
Reference
Clock
Ultra-Clean
Local Oscillator
LMX2541
(RF Synthesizer)
PLL
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9 Detailed Description
9.1 Overview
The LMX2541 is a low-noise synthesizer that can be used with the internal VCO or with an external VCO. The
functional description gives more details on this.
9.2 Functional Block Diagrams
Figure 27. System Block Diagram
Figure 28. Functional Block Diagram
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9.3 Feature Description
The LMX2541 is a low power, high performance frequency synthesizer system which includes a PLL, Partially
Integrated Loop Filter, VCO, VCO Divider, and Programmable Output Buffer. There are three basic modes that
the device can be configured in: Full Chip Mode, External VCO Mode, and Divider Only Mode. Full chip mode is
intended to be used with the internal VCO and PLL. There is also the option of External VCO mode, which allows
the user to connect their own external VCO. Finally, there is Divider only, which is just the VCO divider and
output buffer. The active blocks for these modes are described in Table 10:
Table 10. Active Blocks
AVAILABLE BLOCKS
MODE LOOP VCO OUTPUT
PLL VCO
FILTER DIVIDER BUFFER
Full Yes Yes Yes Yes Yes
Chip
External Yes No No Yes Yes
VCO
Divider No No No Yes Yes
Only
9.3.1 PLL Reference Oscillator Input Pins
There are three basic ways that the OSCin/OSCin* pins may be configured as shown in the table below:
MODE DESCRIPTION XO BIT
Crystal Device is used with a crystal oscillator 1
Single Device is driven with a single-ended source, such as a TCXO. 0
Ended Use this mode when driving with a differential signal, such as an LVDS
Differential 0
signal.
In addition to the way that the OSCin/OSCin* pins are driven, there are also bits that effect the frequency that the
chip uses. The OSC_FREQ word needs to be programmed correctly, or the VCO may have issues locking to the
proper frequency, because the VCO frequency calibration is based on this word.
Table 11. Word Name and Function
WORD NAME FUNCTION
This needs to be set correctly if the internal VCO is used for proper
OSC_FREQ calibration.
This allows the oscillator frequency to be doubled. The R divider is
OSC2X bypassed in this case.
Higher slew rates tend to yield the best fractional spurs and phase noise, so a square wave signal is best for
OSCin. Single ended mode and differential mode have similar results if a square wave is used to drive the
OSCin pin. If using a sine wave, higher frequencies tend to work better due to their higher slew rates.
9.3.2 PLL R Divider
The R divider divides the OSCin frequency down to the phase detector frequency. If the doubler is enabled, then
the R divider is bypassed.
9.3.3 PLL Phase Detector and Charge Pump
The phase detector compares the outputs of the R and N dividers and generates a correction current
corresponding to the phase error. This charge pump current is software programmable to 32 different levels. The
phase detector frequency, fPD, can be calculated as follows:
fPD = fOSCin / R (1)
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R3_LF
R4_LF
Charge
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9.3.4 PLL N Divider and Fractional Circuitry
The N divider in the LMX2541 includes fractional compensation and can achieve any fractional denominator
(PLL_DEN) from 1 to 4,194,303. The integer portion, PLL_N, is the whole part of the N divider value and the
fractional portion, PLL_NUM / PLL_DEN, is the remaining fraction. PLL_N, PLL_NUM, and PLL_DEN are
software programmable. So in general, the total N divider value, N, is determined by:
N = PLL_N + PLL_NUM / PLL_DEN (2)
The order of the delta-sigma modulator is programmable from integer mode to fourth order. There are also
several dithering modes that are also programmable. In order to make the fractional spurs consistent, the
modulator is reset any time that the R0 register is programmed.
9.3.5 Partially Integrated Loop Filter
The LMX2541 integrates the third pole (formed by R3_LF and C3_LF) and fourth pole (formed by R4_LF and
C4_LF) of the loop filter. The values for these integrated components can be programmed independently through
the MICROWIRE interface. The larger the values of these components, the stronger the attenuation of the
internal loop filter. The maximum attenuation can be achieved by setting the internal resistors and capacitors to
their maximum value and the minimum attenuation can be attained by setting all of these to their minimum
setting. This partially integrated loop filter can only be used in full chip mode.
Figure 29. Partially Integrated Loop Filter
9.3.6 Low Noise, Fully Integrated VCO
The LMX2541 includes a fully integrated VCO, including the inductors. The VCO (Voltage Controlled Oscillator)
takes the voltage from the loop filter and converts this into a frequency. The VCO frequency is related to the
other frequencies and divider values as follows:
fVCO = fPD × N = fOSCin × N / R (3)
In order to the reduce the VCO tuning gain and therefore improve the VCO phase noise performance, the VCO
frequency range is divided into many different frequency bands. This creates the need for frequency calibration in
order to determine the correct frequency band given a desired output frequency. The frequency calibration
routine is activated any time that the R0 register is programmed. It is important that the OSC_FREQ word is set
correctly to have this work correctly.
The VCO also has an internal amplitude calibration algorithm to optimize the phase noise which is also activated
any time the R0 register is programmed. The optimum internal settings for this are temperature dependent. If the
temperature is allowed to drift too much without being re-calibrated, some minor phase noise degradation could
result. For applications where this is an issue, the AC_TEMP_COMP word can be used to sacrifice phase noise
at room temperature in order to improve the VCO phase noise over all temperatures. The maximum allowable
drift for continuous lock, ΔTCL, is stated in the electrical specifications. For this part, a number of +125 C means
the part will never lose lock if the part is operated under recommended operating conditions.
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9.3.7 Programmable VCO Divider
The VCO divider can be programmed to any value from 2 to 63 as well as bypass mode if device is in full chip
mode. In external VCO mode or divider mode, all values except bypass mode can be used for the VCO divider.
The VCO divider is not in the feedback path between the VCO and the PLL and therefore has no impact on the
PLL loop dynamics. After this programmable divider is changed, it may be beneficial to reprogram the R0 register
to recallibrate the VCO . The frequency at the RFout pin is related to the VCO frequency and divider value,
VCO_DIV, as follows:
fRFout = fVCO / VCO_DIV (4)
When this divider is enabled, there will be some far-out phase noise contribution to the VCO noise. Also, it may
be beneficial for VCO phase noise to reprogram the R0 register to recalibrate the VCO if the VCO_DIV value is
changed from bypass to divided, or vice-versa.
The duty cycle for this divider is always 50%, even for odd divide values. Because of the architecture of this
divider that allows it to work to high frequencies and always have a 50% duty cycle, there are a few extra
considerations:
In divider only mode, there must be five clock cycles on the ExtVCOin pin after the divide value is
programmed in order to cause the divide value to properly changed. It is fine to use more than 5 clock cycles
for this purpose.
For a divide of 4 or 5 ONLY, the R4 register needs to be programmed one more time after the device is fully
programmed in order synchronize the divider. Failure to do so will cause the VCO divider to divide by the
wrong value. Furthermore, if the VCO signal ever goes away, as is the case when the part is powered down,
it is necessary to reprogram the R4 register again to re-synchronize the divider. Furthermore, if the R0
register is ever programmed in full chip mode, it is also necessary to reprogram the R4 register.
9.3.8 Programmable RF Output Buffer
The output power at the RFout pin can be programmed to various levels as well as on and off states. The output
state of this pin is controlled by the RFoutEN pin as well as the RFOUT word. The RF output buffer can be
disabled while still keeping the PLL in lock. In addition to this, the actual output power level of this pin can be
adjusted using the VCOGAIN, DIVGAIN, and OUTTERM programming words. The reader should note that
VCOGAIN controls the gain of the VCO buffer, not the tuning constant in of the VCO.
9.3.9 Powerdown Modes
The LMX2541 can be powered up and down using the CE pin or the POWERDOWN bit. When the device is
powered down, the programming and VCO calibration information is retained, so it is not necessary to re-
program the device when the device comes out of the powered down state (The one exception is when the
VCO_DIV value is 4 or 5, which has already been discussed.). The following table shows how to use the bit and
pin.
CE PIN POWERDOWN BIT DEVICE STATE
Low Don't Care Powered Down
0 Powered Up
High 1 Powered Down
The device can be programmed in the powerdown state. However, the VCO frequency needs to be changed
when the device is powered up because the VCO calibration does not run in the powerdown state. Also, the
special programming for VCO_DIV = 4 or 5 has to be done when the part is powered up. In order for the CE pin
to properly power the device down when it is held low, the all registers in the device need to have been
programmed at least one time.
9.3.10 Fastlock
The LMX2541 includes the Fastlock feature that can be used to improve the lock times. When the frequency is
changed, a timeout counter is used to engage the fastlock for a programmable amount of time. During the time
that the device is in Fastlock, the FLout pin changes from high impedance to low, thus switching in the external
resistor R2pLF with R2_LF as well as changing the internal loop filter values for R3_LF and R4_LF.
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Vtune
Charge
Pump
Fastlock
Control FLout
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C2_LF
C1_LF
R3_LF
R4_LF
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Figure 30. Fastlock Schematic
Table 12 shows the charge pump gain, loop filter resistors, and FLout pin change between normal operation and
Fastlock.
Table 12. Normal Operation vs Fastlock
NORMAL
PARAMETER FASTLOCK
OPERATION
Charge Pump Gain CPG FL_CPG
Loop Filter Resistor R3_LF R3_LF FL_R3_LF
Loop Filter Resistor R4_LF R4_LF FL_R4_LF
High
FLout Pin Low
Impedance
Once the loop filter values and charge pump gain are known for normal mode operation, they can be determined
for fastlock operation as well. In normal operation, one cannot use the highest charge pump gain and still use
fastlock because there will be no larger current to switch in. If the resistors and the charge pump current are
done simultaneously, then the phase margin can be preserved while increasing the loop bandwidth by a factor of
K as shown in the following table:
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PARAMETER SYMBOL CALCULATION
Charge pump gain in Fastlock FL_CPG Typically choose to be the largest value.
K =
Loop Bandwidth Multiplier K sqrt (FL_CPG/CPG)
FL_R3_LF =
Internal Loop Filter Resistor FL_R3_LF R3_LF / K
FL_R4_LF =
Internal Loop Filter Resistor FL_R4_LF R4_LF / K
R2pLF =
External Loop Filter Resistor R2pLF R2_LF / (K - 1)
9.3.11 Lock Detect
The Ftest/LD pin of the LMX2541 can be configured to output a signal that gives an indication for the PLL being
locked. There are two styles of lock detect; analog and digital. The analog lock detect signal is more of a legacy
feature and consists a series of narrow pulses that correspond to when the charge pump comes on. These
pulses can be integrated with an external RC filter to create generate a lock detect signal. Analog lock detect can
be configured in a push-pull output or an open drain output. The analog open drain lock detect signal can be
integrated with a similar RC filter and requires an additional pullup resistor. This pullup resistor can be much
larger than the resistor in the RC filter in order to make unbalanced time constants for improved sensitivity.
The digital lock detect function can also be selected for the Ftest/LD pin to give a logic level indication of lock or
unlock. The digital lock detect circuitry works by comparing the difference between the phase of the inputs to the
phase detector with a RC generated delay of ε. To indicate a locked state (Lock = HIGH) the phase error must
be less than εfor 5 consecutive phase detector cycles. Once in lock (Lock = HIGH), the RC delay is changed to
δ. To indicate an out of lock state (Lock = LOW), the phase error must become greater than δ. The values of ε
and δare programmable with the DLOCK word.
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NO
NO
NO
YES
YES
YES
Phase Error < H
LD = LOW
(Not Locked)
Phase Error < H
Phase Error < H
LD = HIGH
(Locked)
Phase Error < H
Phase Error > G
YES
NO
NO
YES
START
YES
Phase Error < HNO
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Figure 31. Lock Detect
9.3.12 Current Consumption
The current consumption of the LMX2541 has many factors that influence it. Determining the current
consumption for the entire device involves knowing which blocks are powered up and adding their currents
together. The current in the electrical specifications gives some typical cases, but there could be some variation
over factors such as the phase detector frequency. Also, the output buffer current can be impacted by the
software controllable settings. By subtracting or adding combinations of the currents for the RFout buffer and
VCO divider, the current consumption for the device can be estimated for any usable configuration. The currents
for the buffer and VCO divider are as follows:
BLOCK CURRENT (mA)
~ 40
RF Output Buffer (See Programmable Output Power with On/Off)
VCO Divider 32
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9.3.13 Fractional Spurs
9.3.13.1 Primary Fractional Spurs
The primary fractional spurs occur at multiples of the channel spacing and can change based on the fraction. For
instance, if the phase detector frequency is 10 MHz, and the channel spacing is 100 kHz, then this could be
achieved using a fraction of 1/100. The fractional spurs would be at offsets that are multiples 100 kHz.
9.3.13.2 Sub-Fractional Spurs
Sub-fractional spurs occur at sub-multiples of the channel spacing, Fch. For instance, in the above example,
there could be a sub-fractional spur at 50 kHz. The occurrence of these spurs is dependent on the modulator
order. Integer mode and the first order modulator never have sub-fractional spurs. If the fractional denominator
can be chosen to avoid factors of 2 or 3, then there will also be no sub-fractional spurs. Sub-fractional spurs get
worse for higher order modulators. Dithering tends to reduce sub-fractional spurs at the expense of increasing
PLL phase noise. Table 13 provides guidance on predicting sub-fractional spur offset frequencies.
Table 13. Sub-Fractional Spur Offset Frequencies
vs.
Modulator Order and Fractional Denominator Factors
FRACTIONAL DENOMINATOR FACTORS
ORDER NO FACTOR of 2 or 3 FACTOR of 2 but not 3 FACTOR of 3 but not 2 FACTOR of 2 and 3
Integer Mode None None None None
1st Order Modulator None None None None
2nd Order Modulator None Fch/2 None Fch/2
3rd Order Modulator None Fch/2 Fch/3 Fch/6
4th Order Modulator None Fch/4 Fch/3 Fch/12
9.3.14 Impact of VCO_DIV on Fractional Spurs
Because the fractional and sub-fractional spur levels do not depend on output frequency, there is a big benefit to
division. In general, every factor of 2 gives a 6 dB improvement to fractional spurs. Also, because the spur offset
frequency is not divided, the channel spacing at the VCO can be also increased to improve the spurs. However,
if the on-chip VCO is used, crosstalk can cause spurs at a frequency of fRFout mod fPD. Consider the following
example of a 50 MHz phase detector frequency and VCO_DIV = 2. If the VCO is at 3000.1 MHz and divided by 2
to get 1500.05 MHz, there will be a spur at an offset of 50 kHz (1500.05 MHz mod 50 MHz). However, if the
VCO frequency is at 3050.1 MHz, the output will be at 1525.05 MHz, but the spur will be at a much farther offset
that can easily be filtered by the loop filter of 25.05 MHz (1525.05 MHz mod 50 MHz).
9.3.15 PLL Phase Noise
9.3.15.1 Figure 6, LMX2541SQ3740E Raw Phase Noise Measurement Plot Description
The above plot demonstrates the PLL phase noise of the LMX2541SQ3700E operating at 3700 MHz output
frequency, phase detector frequency of 100 MHz, and charge pump gain of 32X. The loop bandwidth was made
as wide as possible to fully expose the PLL phase noise and reference source was a 100 MHz Wenzel crystal.
This measurement was done in integer mode. To better understand the impact of using fractional mode, consult
the applications section.
The measured noise is the sum of the PLL 1/f noise and noise floor. At offsets below 1 kHz, the PLL 1/f noise
dominates and changes at a rate of 10 dB/decade. The noise at 1 kHz is dominated by this 1/f noise and has a
value of -103 dBc/Hz. In the 100 - 200 kHz offset range, the noise is -113.7 dBc/Hz and is dominated by the PLL
noise floor. It can be shown that if the effects of the loop filter peaking and the 1/f noise are subtracted away from
this measurement, it would be about 0.6 dB better.
If the phase detector frequency is changed with the VCO frequency held constant, the PLL noise floor will
change, but the 1/f noise will remain the same. If the VCO frequency is changed, both the 1/f noise and PLL
noise floor change at a rate of 20 dB/decade.
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9.3.15.2 Figure 37, LMX2541SQ2690 System Phase Noise Plot Description
For this plot, a third order modulator with dithering disabled was used with a fractional denominator of 500000.
The charge pump gain was 32X and the loop filter components were C1 = 2.2 nF, C2 = 22 nF, R2 = 470 Ω. The
internal loop filter components were C3_LF = 20 pF, C4_LF = 100 pF, R3_LF = 1 kΩ, R4_LF = 200 Ω. The VCO
frequency is 2720.1 MHz. The OSCin signal was a 500 MHz differential LVPECL output of the LMK04033.
9.3.15.3 Phase Noise of PLL
Disregarding the impact of reference oscillator noise, loop filter resistor thermal noise, and loop filter shaping, the
phase noise of the PLL can be decomposed into three components: flicker noise, flat noise, and fractional noise.
These noise sources add in an RMS sense to produce the total PLL noise. In other words:
LPLL(f) = 10·log(10(LPLL_flat(f) / 10 ) + 10(LPLL_flicker (f) / 10 )+ 10(LPLL_fractional(f) / 10 ) (5)
Table 14. Potential Influencing Factors
POTENTIAL INFLUENCING FACTORS
SYMBOL f fVCO fPD KPD FRAC
LPLL_flat(f) No Yes Yes Yes No
LPLL_flicker(f) Yes Yes No Yes No
LPLL_fractional(f) Yes No Yes No Yes
The preceding table shows which factors of offset frequency (f), VCO frequency (fVCO), phase detector frequency
(fPD), charge pump gain (KPD), and the fractional settings (FRAC) can potentially influence each phase noise
component. The fractional settings include the fraction, modulator order, and dithering.
For the flat noise and flicker noise, it is possible to normalize each of these noise sources into a single index. By
normalizing these noise sources to an index, it makes it possible to calculate the flicker and flat noise for an
arbitrary condition. These indices are reported in the electrical characteristics section and in the typical
performance curves.
Table 15. Noise Component
NOISE COMPONENT INDEX RELATIONSHIP
LPLL_flat(f) =
LNPLL_flat
LPLL_flat(f) LNPLL_flat(1 Hz)
(1 Hz) + 20·log(N) + 10·log(fPD)
LPLL_flicker(f) =
LNPLL_flicker
LPLL_flicker(f) LNPLL_flicker(10 kHz)
(10 kHz) - 10·log(10 kHz / f) + 20·log( fVCO / 1 GHz )
The flat noise is dependent on the PLL N divider value (N) and the phase detector frequency (fPD) and the 1 Hz
Normalized phase noise ( LNPLL_flat(1 Hz) ). The 1 Hz normalized phase noise can also depend on the charge
pump gain as well. In order to make an accurate measurement of just the flat noise component, the offset
frequency must be chosen sufficiently smaller then the loop bandwidth of the PLL, and yet large enough to avoid
a substantial noise contribution from the reference and PLL flicker noise. This becomes easier to measure for
lower phase detector frequencies.
The flicker noise, also known as 1/f noise, can be normalized to 1 GHz carrier frequency and 10 kHz offset,
LNPLL_flicker(10 kHz). Flicker noise can dominate at low offsets from the carrier and has a 10 dB/decade slope and
improves with higher charge pump currents and at higher offset frequencies . To accurately measure the flicker
noise it is important to use a high phase detector frequency and a clean crystal to make it such that this
measurement is on the 10 dB/decade slope close to the carrier. LPLL_flicker(f) can be masked by the reference
oscillator performance if a low power or noisy source is used.
An alternative way to interpret the flicker noise is the 1/f noise corner, fcorner. This would be the offset frequency
where the flat noise and flicker noise are equal. This corner frequency changes as a function of the phase
detector frequency and can be related to the flat and flicker noise indices as shown below.
fcorner = 10( (LNPLL_flicker(10 kHz) - LNPLL_flat(1 Hz) - 140) / 10 ) × fPD (6)
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Based on the values for LNPLL_flicker(10 kHz) and LNPLL_flat(1Hz) as reported in the electrical specifications,
the corner frequency can be calculated. For example, one of the plots in the typical performance characteristics
shows the phase noise with a 100 MHz phase detector frequency and 32X charge pump gain. In this case, this
corner frequency works out to be 0.000123 × 100 MHz = 12.3 kHz.
KPD LNPLL_flicker(10 kHz) LNPLL_flat(1 Hz) fcorner
1X -116.0 dBc/Hz -220.8 dBc/Hz 0.000302 × fPD
32X -124.5 dBc/Hz -225.4 dBc/Hz 0.000123 × fPD
For integer mode or a first order modulator, there is no fractional noise (disregarding fractional spurs). For higher
order modulators, the fractional engine may or may not add significant phase noise depending on the fraction
and choice of dithering.
9.3.16 Impact of Modulator Order, Dithering, and Larger Equivalent Fractions on Spurs and Phase Noise
To achieve a fractional N value, an integer N divider is modulated between different values. This gives rise to
three main degrees of freedom with the LMX2541 delta-sigma engine: the modulator order, dithering, and the
way that the fractional portion is expressed. The first degree of freedom, the modulator order, can be selected as
zero (integer mode), one, two, three, or four. One simple technique to better understand the impact of the delta-
sigma fractional engine on noise and spurs is to tune the VCO to an integer channel and observe the impact of
changing the modulator order from integer mode to a higher order. A higher fractional modulator order in theory
yields lower primary fractional spurs. However, this can also give rise to sub-fractional spurs in some
applications. The second degree of freedom is dithering. Dithering seeks to improve the sub-fractional spurs by
randomizing the sequence of N divider values. In theory, a perfectly randomized sequence would eliminate all
sub-fractional spurs, but add phase noise by spreading the energy that would otherwise be contained in the
spurs. The third degree of freedom is the way that the fraction is expressed. For example, 1/10 can be expressed
as a larger equivalent fraction of 100000/1000000. Using larger equivalent fractions tends to increase
randomization similar to dithering. In general, the very low phase noise of the LMX2541 exposes the modulator
noise when dithering and large fractions are used, so use these with caution. The avid reader is highly
encouraged to read application note 1879 for more details on fractional spurs. The following table summarizes
the relationships between spur types, phase noise, modulator order, dithering and fractional expression.
ACTION
USING
INCREASE
NOISE / SPUR TYPE INCREASE LARGER
MODULATOR DITHERING EQUIVALENT
ORDER FRACTIONS
WORSE
Phase Noise (But only for larger fractions or WORSE WORSE
more dithering)
Primary Fractional Spur BETTER NO IMPACT NO IMPACT
WORSE
Sub-Fractional Spurs (Creates more sub BETTER BETTER
-fractional spurs)
9.3.17 Modulator Order
In general, the fractional mode of the PLL enables the use of a higher phase detector frequency relative to the
channel spacing, which enables the in-band noise of the PLL to be lower. The choice of modulator order to be
used in fractional mode is based on how much higher fPD can be made relative to the channel spacing and the
acceptable spur levels. The LMX2541 has a programmable modulator order which allows the user to make a
trade-off between PLL noise and primary and sub-fractional spur performance. The following table provides some
general guidelines for choosing modulator order: Note that the spurs due to crosstalk will not be impacted by
modulator order.
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ORDER GUIDELINES FOR USE
Use if fPD can be made very high without using a fractional N value.
Integer Mode Use if it is not desired to make fPD higher using a fractional N value. This could be the case if the loop
bandwidth is very narrow and smaller loop filter capacitors are desired.
Use 1st order if fPD can be increased by at least a factor of four over the integer case and fractional spur
frequencies and levels are acceptable.
1st Order Modulator If the channel spacing is 5 MHz or greater, the 1st order modulator may provide better spur performance than
integer mode.
If the spurs of the 1st order modulator are unacceptable, use a higher order modulator. If the spurious
components are due to crosstalk they will not be improved by increasing modulator order. In this case , use the
lowest order modulator that gives acceptable performance.
2nd Order Modulator
3rd Order Modulator Use if the spurs of the 1st order modulator are unacceptable.
4th Order Modulator In general, use the lowest order modulator unless a higher order modulator yields an improvement in primary
fractional spurs. If the spurious components are due to crosstalk, they will not be improved by increasing the
modulator order.
9.3.18 Programmable Output Power with On/Off
The power level of the RFout pin is programmable, including on/off controls. The RFoutEN pin and RFOUT word
can be used to turn the RFout pin on and off while still keeping the VCO running and in lock. In addition to on/off
states, the power level can also be programmed in various steps using the VCOGAIN, DIVGAIN, and OUTTERM
programming words. There are tables in the Typical Characteristics section that discuss the impact of these
words on the output power. In addition to impacting the output power, these words also impact the current
consumption of the device. This data was obtained as an average over all frequencies. In general, it is desirable
to find the combination of programming words that gives the lowest current consumption for a given output power
level. All numbers reported are relative to the case of VCOGAIN = OUTTERM = 12. According to this data, using
a VCOGAIN or OUTTERM value of 12 or greater yields only a small increase in output power, but a large
increase in current consumption.
Table 16. Change in Current Consumption in Bypass Mode as a Function of VCOGAIN and OUTTERM
VCOGAIN
3 6 9 12 15
3-26.0 -22.3 -18.6 -15.1 -11.8
6-18.5 -15.5 -12.6 -9.7 -6.9
OUTTERM 9 -11.1 -9.0 -6.9 -4.7 -2.5
12 -3.8 -2.6 -1.4 +0.0 +1.5
15 +3.3 +3.7 +4.0 +4.5 +5.3
Table 17. Change in Current Consumption in Divided Mode as a Function of DIVGAIN and OUTTERM
DIVGAIN
3 6 9 12 15
3-24.4 -21.7 -18.7 -15.9 -13.3
6-16.2 -14.6 -12.6 -10.1 -8.0
OUTTERM 9 -8.3 -7.6 -6.8 -5.0 -3.2
12 -0.5 -0.7 -0.7 +0.0 +1.3
15 +7.1 +6.0 +5.2 +4.9 +5.6
9.3.19 Loop Filter
Loop filter design can be rather complicated, but there are design tools and references available at www.ti.com.
The loop bandwidth can impact the size of loop filter capacitors and also how the phase noise is filtered. For
optimal integrated phase noise, choose the bandwidth to be about 20% wider than the frequency where the in-
band PLL phase noise (as described in PLL Phase Noise) and open loop VCO noise cross. This optimal loop
bandwidth may need adjustment depending on the application requirements. Reduction of spurs can be achieved
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by reducing the loop bandwidth. On the other hand, a wider loop bandwidth may be required for faster lock time.
Note that using the integrated loop filter components can lead to a significant restriction on the loop bandwidth
and should be used with care. 2 kΩfor R3_LF and R4_LF is a good starting point. If the integrated loop filter
restricts the loop bandwidth, then first try to relieve this restriction by reducing the integrated loop filter resistors
and then reduce the capacitors only if necessary.
9.3.20 Internal VCO Digital Calibration Time
When the LMX2541 is used in full chip mode, the integrated VCO can impact the lock time of the system. This
digital calibration chooses the closest VCO frequency band, which typically gets the device within a frequency
error 10 MHz or less of the final settling frequency, although this final frequency error can change slightly
between the different options of the LMX2541. Once this digital calibration is finished, this remaining frequency
error must settle out, and this remaining lock time is dictated by the loop bandwidth.
Based on measured data, this digital calibration time can be approximated by the following formula:
LockTime = A + B/CLK + ΔF + D·( ΔF/CLK ) (7)
SYMBOL1 VALUE UNITS
Locktime Varies µs
A 30 μs
B 3800 None
C 0.1 us/MHz
D 2 µs
ΔF Varies MHz
fOSCin / 2
for 0 OSC_FREQ 63
fOSCin / 4
CLK None
for 64 OSC_FREQ 127
fOSCin / 8
for 128 OSC_FREQ
For example, consider the LMX2541SQ3320E changing from 3600 to 3400 with an OSCin frequency of 100
MHz. In this case, ΔF = 200 (direction of frequency change does not matter), fOSCin = 100 MHz, and
OSC_FREQ=100. The calibration circuitry is run at a clock speed of CLK = 100 MHz / 4 = 25 MHz. When this
values are substituted in the formula, the resulting lock time is 218 μs. After this time, the VCO will be within
about 10 MHz of the final frequency and this final frequency error will settle out in an analog fashion. This final
frequency error can be slightly different depending on which option of the LMX2541 is being used.
9.4 Device Functional Modes
9.4.1 External VCO Mode
The LMX2541 also has provisions to be driven with an external VCO as well. In this mode, the user has the
option of using the RFout pin output, although if this pin is used, the VCO input frequency is restricted to 4 GHz.
If not used, the RFout pin should be left open. The VCO input is connected to the ExtVCOin pin. Because the
internal VCO is not being used, the part option that is being used does not have a large impact on phase noise
or spur performance. It is also possible to switch between both Full Chip mode and External VCO mode.
9.4.2 Digital FSK Mode
The LMX2541 supports 2-level digital frequency shift keying (FSK) modulation. The bit rate is limited by the loop
bandwidth of the PLL loop. As a general rule of thumb, it is desirable to have the loop bandwidth at least twice
the bit rate. This is achieved by changing the N counter rapidly between two states. The fractional numerator and
denominator are restricted to a length of 12 bits. The 12 LSB’s of the numerator and denominator set the center
frequency, Fcenter, and the 10 MSB’s of the numerator set the frequency deviation, Fdev. The LMX2541 has the
ability to switch between two different numerator values based on the voltage at the DATA pin. When DATA is
low, the output frequency will be Fcenter Fdev and when the DATA pin is high the output frequency will be
Fcenter + Fdev. A limitation of the FSK mode is the frequency deviation cannot cause the N counter to cross
integer boundaries. When using FSK mode, the FDM bit needs to be set to zero.
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9.5 Programming
There are several other considerations for programming:
The DATA is clocked into a shift register on each rising edge of the CLK signal. On the rising edge of the LE
signal, the data is sent from the shift registers to an actual counter.
A slew rate of at least 30 V/μs is recommended for the CLK, DATA, and LE signals.
After the programming is complete, the CLK, DATA, and LE signals should be returned to a low state.
When using the part in Full Chip Mode with the Integrated VCO, LE should be kept high no more than 1 us
after the programming of the R0 register. Failure to do so may interfere with the digital VCO calibration.
If the CLK and DATA lines are toggled while the in VCO is in lock , as is sometimes the case when these
lines are shared with other parts, the phase noise may be degraded during the time of this programming.
9.5.1 General Programming Information
The LMX2541 is programmed using several 32-bit registers used to control the LMX2541 operation. A 32-bit shift
register is used as a temporary register to indirectly program the on-chip registers. The shift register consists of a
data field and an address field. The last 4 register bits, CTRL[3:0] form the address field, which is used to
decode the internal register address. The remaining 28 bits form the data field DATA[27:0]. While LE is low,
serial data is clocked into the shift register upon the rising edge of clock (data is programmed MSB first). When
LE goes high, data is transferred from the data field into the selected register bank. For initial device
programming the register programming sequence must be done in the order as shown in the register map. The
action of programming register R7 and bringing LE low resets all the registers to default values, including hidden
registers. The programming of register R0 is also special for the device when operating in full chip mode
because the action of programming either one of these registers activates the VCO calibration.
In addition to changing the values of various words, the programming of certain registers triggers certain events
as described in the table below:
CONFIGURATIONS
PROGRAMMING EVENT TRIGGERED WHERE IT HAS AN SIGNIFICANCE
EVENT IMPACT
Resets all registers,
Action of This needs to be the first programming step for all configurations. If
including hidden
programming register All register R7 is ever programmed again, all programming information
ones, to a default
R7 and bring LE low will be reset to the default state.
state The VCO calibration tunes the VCO to the correct frequency band
Action of and optimizes the phase noise. It is necessary whenever the
programming register Activates the VCO Only in Full Chip internal VCO frequency is changed. Also, if the temperature drifts
R0 and bringing LE calibration Mode considerably, then this calibration can better optimize the phase
low noise.
Only when the RFout
Action of Synchronizes the pin ins enabled and
programming register Consult the Feature Description for more details.
VCO Divider the VCO divider is set
R4 to 4 or 5
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9.6 Register Maps
The following table lists the registers as well as the order that they should be programmed. Register 7 is programmed first and the action of programming
register R7 resets all the registers after the LE pin is pulled to a low state. Register R0 is programmed last because it activates the VCO calibration. The
one exception to this is when the VCO_DIV value is 4 or 5. Consult the programming section on VCO_DIV for more details.
Table 18. Register Map
31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
DATA[27:0] C3 C2 C1 C0
R700000000000000000000000000010111
VCO_DIV_OPT
R130000000000000000000000001 1101
[2:0]
R1200000000000000000000000000011100
R900101000000000000001010000001001
R8 0 0 0 0 0 0 0 1 0 0 0 1 0 0 0 1 1 1 0 0 1 1 1 AC_TEMP_COMP[4:0] 1 0 0 0
RFOUT[1
R6 0 0 0 0 0 0 0 0 0 0 0 1 1 1 VCOGAIN[3:0] OUTTERM[3:0] DIVGAIN[3:0] 0 1 1 0
:0]
R5 1 0 1 FL_CPG[4:0] FL_RF_LF[2:0] FL_R3_LF[2:0] FL_TOC[13:0] 0 1 0 1
R4 C4_LF[3:0] C3_LF[3:0] R4_LF[2:0] R3_LF[2:0] VCO_DIV[5:0] OSC_FREQ[7:0] 0 1 0 0
PO
OS WE
FS CP FD CP MODE[1:
R3 0 0 DLOCK[2:0] DITH[1:0] ORDER[2:0] C MUX[3:0] CPG[4:0] XO R 0 0 1 1
K T M P 0]
_2X DO
WN
R2 0 0 0 0 0 1 DEN[21:0] 0 0 1 0
R1 0 0 0 0 PLL_NUM[21:16] PLL_N[17:12] PLL_R[11:0] 0 0 0 1
R0 PLL_NUM[15:0] PLL_N[11:0] 0 0 0 0
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9.6.1 Register R7
Although Register 7 has no elective bits to program, it is very important to program this register because the
action of doing so with the bit sequence shown in the register map resets all the registers, including hidden
registers with test bits that are not disclosed. Register 7 should always be programmed first, because it will reset
all other programming information. The register reset occurs only after the LE signal has transitioned from low to
high and back to low again.
9.6.1.1 Register R13
This register needs to be programmed only in the event that the RFout pin is being used and VCO_DIV = 1.
9.6.1.1.1 VCO_DIV_OPT[2:0]
This word optimizes the RFout power level based on the VCO_DIV and VCO_GAIN words.
CONDITION VCO_DIV_OPT COMMENTS
RFout Pin Disabled
OR Register R13 Does Not need to be
VCO_DIV>1 0 programmed, because 0 is the default.
OR
VCO_GAIN<13
RFout Pin Enabled
AND 4
VCO_DIV=1
VCO_GAIN>12
9.6.1.2 Register R12
This register needs to be programmed as shown in the register map in the event that the internal VCO is being
used. When using external VCO mode, this register does not need to be programmed.
9.6.1.3 Register R9
Program this register as shown in the register map.
9.6.1.4 Register R8
9.6.1.4.1 AC_TEMP_COMP[4:0]
This word optimizes the VCO phase noise for possible temperature drift. When the VCO frequency is changed,
the internal tuning algorithm optimizes the phase noise for the current temperature. In fixed frequency
applications, temperature drift may lead to sub-optimal phase noise over time. In dynamic frequency applications,
the re-tuning of the VCO frequency overcomes this problem because the phase noise is re-optimized each time
the VCO frequency is changed. The AC_TEMP_COMP word can be used to optimize the VCO phase noise for
temperature drift for these different scenarios. The following table indicates which values of this word should be
used for each scenario.
AC_TEMP_COMP APPLICATION TYPE
5 Dynamic Frequency
24 Fixed Frequency
All Other States Invalid
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9.6.1.5 Register R6
Register R6 has words that impact the output power of the RFout pin.
9.6.1.5.1 RFOUT[1:0] - RFout enable pin
This word works in combination with the RFoutEN Pin to control the state of the RFout pin.
RFOUT RFoutEN PIN RFout PIN STATE
0 Don't Care Disabled
2 Don't Care Enabled
Low Disabled
1 or 3 High Enabled
9.6.1.5.2 DIVGAIN[3:0], VCOGAIN[3:0], and OUTTERM[3:0] - Power Controls for RFout
These three words may be programmed in a value from 0 to 15 and work in conjunction to control the output
power level of the RFout pin. Increasing any of these values increases the output power at the expense of higher
current consumption of the buffer. Although there may be more than one way to get the same output power,
some combinations may have lower current. The typical performance characteristics show these trade-offs. The
default setting for all these bits is 12. The value of VCO_DIV determines which two of these three words have an
impact.
VCO_DIV BITS that IMPACT POWER
1 (Bypass) OUTTERM, VCOGAIN
>1 (Not Bypass) OUTTERM, DIVGAIN
9.6.1.6 Register R5
This register controls the fastlock mode which enables a wider loop bandwidth when the device is changing
frequencies.
9.6.1.6.1 FL_TOC[13:0] -- Time Out Counter for FastLock
When the value of this word is 3 or less, FastLock time out counter is disabled, and the FLout pin can be used
for general purpose I/O. When this value is 4 or greater, the time out counter is engaged for the amount of phase
detector cycles shown in the table below.
TOC VALUE FLout PIN STATE FASTLOCK ENGAGEMENT TIME
0 High Impedance Disabled
1 Low Always Engaged
2 Low Disabled
3 High Disabled
Engaged for
4 Low 4 × 2 Phase Detector Cycles
. . .
Engaged for
16383 Low 16383 × 2 Phase Detector Cycles
When this count is active, the FLout Pin is grounded, the FastLock current is engaged, and the resistors R3 and
R4 are also potentially changed. The table below summarizes the bits that control various values in and out of
FastLock.
CHARGE PUMP
FastLock STATE FLout R3_LF VALUE R4_LF VALUE
CURRENT
Not Engaged High Impedance CPG R3_LF R4_LF
Engaged Grounded FL_CPG FL_R3_LF FL_R4_LF
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9.6.1.6.2 FL_R3_LF[2:0] -- Value for Internal Loop Filter Resistor R3 During Fastlock
FL_R3_LF VALUE R3 RESISTOR DURING FASTLOCK (kΩ)
0 Low ( 200 Ω)
1 1
2 2
3 4
4 16
5-7 Reserved
9.6.1.6.3 FL_R4_LF[2:0] -- Value for Internal Loop Filter Resistor R4 During Fastlock
FL_R4_LF VALUE R3 RESISTOR DURING FASTLOCK (kΩ)
0 Low ( 200 Ω)
1 1
2 2
3 4
4 16
5-7 Reserved
9.6.1.6.4 FL_CPG[4:0] -- Charge Pump Current for Fastlock
When FastLock is enabled, this is the charge pump current that is used for faster lock time.
TYPICAL FASTLOCK CHARGE PUMP
FL_CPG FASTLOCK CHARGE PUMP STATE CURRENT at 3.3 VOLTS (µA)
0 1X 100
1 2X 200
2 3X 300
3 4X 400
... ... ...
31 32X 3200
9.6.1.7 Register R4
This register controls miscellaneous functions of the device. The action of programming the R4 register also
synchronizes the VCO divider, which is necessary when VCO_DIV = 4 or 5.
9.6.1.7.1 OSC_FREQ [7:0] -- OSCin Frequency for VCO Calibration Clocking
This word is used for the VCO frequency calibration. This word should be set to the OSCin frequency rounded to
the nearest MHz.
OSC_FREQ OSCin FREQUENCY
0 Illegal State
1 1 MHz
2 2 MHz
... ...
255 MHz
255 and higher
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9.6.1.7.2 VCO_DIV[5:0] - VCO Divider
The output of the VCO is divided by the value of VCO_DIV, which can range from 1 (Bypass Mode) to 63 and all
values in between with the limitation that the VCO divider can only be set to bypass mode when the device is
operating in full chip mode. When the VCO divider is set to 4 or 5 ONLY, there is one extra programming step
required to synchronize the VCO divider. Consult the Feature Description for more details.
VCO_DIV VCO OUTPUT DIVIDE COMMENTS
0 n/a Illegal State
1 Bypass Mode This state only available for MODE=Full Chip Mode
2 Divide by 2
3 Divide by 3
4 Divide by 4 Extra programming is required for divide by 4 and divide by 5 only. Refer to the
Feature Description for more details.
5 Divide by 5
6 Divide by 6
... ...
62 Divide by 62
63 Divide by 63
9.6.1.7.3 R3_LF[2:0] -- Value for Internal Loop Filter Resistor R3
This word controls the state of the internal loop filter resistor R3_LF when the device is in Full Chip Mode and
Fastlock is not active.
R3_LF VALUE R3 RESISTOR DURING FASTLOCK (kΩ)
0 Low ( 200 Ω)
1 1
2 2
3 4
4 16
5-7 Reserved
9.6.1.7.4 R4_LF[2:0] -- Value for Internal Loop Filter Resistor R4
This word controls the state of the internal loop filter resistor R4_LF when the device is in Full Chip Mode and
Fastlock is not active.
R4_LF VALUE R3 RESISTOR DURING FASTLOCK (kΩ)
0 Low ( 200 Ω)
1 1
2 2
3 4
4 16
5-7 Reserved
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9.6.1.7.5 C3_LF[3:0] -- Value for C3 in the Internal Loop Filter
This word controls the state of the internal loop filter resistor C3_LF when the device is Full Chip Mode.
C3_LF C3 (pF)
0 0
1 1
2 5
3 6
4 10
5 11
6 15
7 16
8 20
9 21
10 25
11 26
12 30
13 31
14 35
15 36
9.6.1.7.6 C4_LF[3:0] -- Value for C4 in the Internal Loop Filter
This word controls the state of the internal loop filter resistor C4_LF when the device is Full Chip Mode.
C4_LF C4 (pF)
0 0
1 5
2 20
3 25
4 40
5 45
6 60
7 65
8 100
9 105
10 120
11 125
12 140
13 145
14 160
15 165
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9.6.1.8 Register R3
This register controls miscellaneous features of the device.
9.6.1.8.1 MODE[1:0] -- Operational Mode
The LMX2541 can be run in several operational modes as listed in the table below:
MODE NAME DIVIDER PLL VCO
0 Full Enabled Enabled Enabled
1 External VCO Enabled Enabled Disabled
2 Divider Only Enabled Disabled Disabled
3 Test (Reserved) Enabled Enabled Enabled
9.6.1.8.2 Powerdown -- Powerdown Bit
Enabling this bit powers down the entire device, although register and VCO calibration information is retained.
9.6.1.8.3 XO - Crystal Oscillator Mode Select
When this bit is enabled, a crystal with appropriate load capacitors can be attached between the OSCin and
OSCin* pins in order to form a crystal oscillator.
9.6.1.8.4 CPG[4:0] -- Charge Pump Current
This word programs the charge pump current gain. The current is programmable between 100 uA and 3.2 mA in
100 uA steps.
CPG CHARGE PUMP STATE TYPICAL CHARGE PUMP CURRENT (µA)
0 1X 100
1 2X 200
2 3X 300
3 4X ...
... ...
31 32X 3200
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9.6.1.8.5 MUX[3:0] -- Multiplexed Output for Ftest/LD Pin
The MUX[3:0] word is used to program the output of the Ftest/LD Pin. This pin can be used for a general
purpose I/O pin, a lock detect pin, and for diagnostic purposes. When programmed to the digital lock detect
state, the output of the Ftest/LD pin will be high when the device is in lock, and low otherwise. The output voltage
level of the Ftest/LD is not equal to the supply voltage of the device, but rather is given by VOH and VOL in the
electrical characteristics specification.
Because the Ftest/LD pin is close to the OSCin pin, the state of this pin can have an impact on the performance
of the device. If any of the diagnostic modes (8-13) are used, the OSCin sensitivity can be severely degraded, so
these should only be used for diagnostic purposes. The fractional spurs can also be impacted a little by the MUX
programming word. The Push-Pull digital lock detect modes, like mode 3, tend to have the best fractional spurs,
so these states are recommended, even if the digital lock detect function is not needed.
MUX OUTPUT TYPE FUNCTION COMMENTS
0 High Impedance Disabled
1 Push-Pull Logical High State GENERAL PURPOSE I/O MODES
2 Push-Pull Logical Low State
3 Push-Pull Digital Lock Detect
4 Push-Pull Inverse Digital Lock Detect LOCK DETECT MODES
5 Open Drain Digital Lock Detect Consult Feature Description for more details
State 3 is recommended for optimal spurious performance.
6 Open Drain Analog Lock Detect
7 Push-Pull Analog Lock Detect
8 Push-Pull N Divider DIAGNOSTIC MODES
9 Push-Pull N Divider / 2 These allow the user to view the outputs of the N divider,
10 Push-Pull R Divider R divider, and phase frequency detector (PFD) and are
11 Push-Pull R Divider / 2 intended only for diagnostic purposes. Typically, the output
is narrow pulses, but when the output is divided by 2, there
12 Push-Pull PFD Up is a 50% duty cycle. The use of these modes (including R
13 Push-Pull PFD Down Divider) can degrade the OSCin sensitivity.
14-15 N/A Reserved
9.6.1.8.6 CPP - Charge Pump Polarity
This bit sets the polarity of the phase detector.
CPP CHARGE PUMP POLARITY TYPICAL APPLICATIONS
Full Chip Mode
0 Negative External VCO Mode with an inverting active loop filter.
1 Positive External VCO Mode with a passive loop filter.
9.6.1.8.7 OSC2X-- OSCin Frequency Doubler
Enabling this bit doubles the OSCin frequency. This is useful in achieving a higher phase detector frequency to
improve PLL phase noise, push out noise from the delta-sigma modulator, and sometimes reduce fractional
spurs . Note that when this bit is enabled, the R divider is bypassed.
OSC_2X STATE
0 Normal
1 OSCin frequency is doubled
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9.6.1.8.8 FDM - Extended Fractional Denominator Mode Enable
Enabling this bit allows the fractional numerator and denominator to be expanded from 10 bits to 22 bits. In 10-bit
mode, only the first 10 bits of the fractional numerator and denominator are considered. When using FSK mode,
this bit has to be disabled.
FDM FRACTIONAL MODE
0 10-bit
1 (Default) 22-bit
9.6.1.8.9 ORDER[2:0] -- Delta-Sigma Modulator Order
This word determines the order of the delta-sigma modulator in the PLL. In general, higher order fractional
modulators tend to reduce the primary fractional spurs that occur at increments of the channel spacing, but can
also create spurs that are at a fraction of the channel spacing. The optimal choice of modulator order is very
application specific, however, a third order modulator is a good starting point. The first order modulator has no
analog compensation or dithering
DELTA-SIGMA
ORDER MODE COMMENTS
MODULATOR
0 Disabled Integer Allows larger N Counter
1 First Order This has no analog compensation or dithering
2 Second Order Fractional
3 Third Order Traditional Delta-Sigma Operation
4 Fourth Order
5-7 Illegal States n/a n/a
9.6.1.8.10 DITH[1:0] -- Dithering
Dithering randomizes the delta-sigma modulator output. This reduces sub-fractional spurs at the expense of
adding phase noise. In general, it is recommended to keep the dithering strength at None or Weak for most
applications. Dithering should never be used when the device is used in integer mode or a first order modulator.
When using dithering with the other delta-sigma modulator orders, it is beneficial to disable it in the case where
the fractional numerator is zero, because it can actually create sub-fractional spurs.
DITH DITHERING STRENGTH
0 Weak
1 Medium
2 Strong
3 Disabled
9.6.1.8.11 CPT - Charge Pump TRI-STATE
When this bit is enabled, the charge pump is at TRI-STATE. The TRI-STATE mode could be useful for open loop
modulation applications or as diagnostic tool for measuring the VCO noise, but is generally not used.
CPT CHARGE PUMP
0 Normal Operation
1 TRI-STATE
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9.6.1.8.12 DLOCK[2:0] - Controls for Digital Lock Detect
This word controls operation of the digital lock detect function through selection of the window sizes (εand δ). In
order to indicate the PLL is locked, there must be 5 consecutive phase detector output cycles in which the time
offset between the R and N counter outputs is less than ε. This will cause the Ftest/LD pin output to go high.
Once lock is indicated, it will remain in this state until the time offset between the R and N counter outputs
exceeds δ. For this device, εand δare the same. If the OSCin signal goes away, the digital lock detect circuit will
reliably indicate an unlocked condition. Consult the Feature Description for more details. A larger window size
makes the lock detect circuit less sensitive, but may be necessary in some situations to reduce chattering.
WINDOW SIZE
DLOCK (εand δ)
03.5
(Default)
1 5.5
2 7.5
3 9.5
4 11.5
5 13.5
6 -7 Reserved
There are restrictions when using digital lock detect, based on the phase detector frequency (fPD), Modulator
Order (ORDER), and VCO frequency (fVCO). The first restriction involves a minimum window size (εmin), the
second one involves a maximum window size (εmax), and the third involves further restrictions on the maximum
phase detector frequency that are implied by the window size that is selected.
The first restriction involves the minimum window size (εmin). This minimum window size cannot be greater than
the maximum programmable value of 13.5 ns for valid operation of the digital lock detect. Possible remedies for
this solution would be reducing the delta-sigma order, using a higher VCO frequency and using a larger
VCO_DIV value, or using analog lock detect.
13.5 ns εmin = 2ORDER-1 / fVCO (8)
The second restriction is the maximum window size (εmax). If the calculated maximum window size is less than
the minimum programmable window size of 3.5 ns, then this indicates that the digital lock detect cannot be used
in this condition. Possible remedies for this could be to decrease the phase detector frequency, use analog lock
detect, decrease the delta-sigma order, or decrease the VCO frequency.
3.5 ns εmax = 1/fPD -εmin - 2 ns (9)
The third restriction comes from rearranging the equation for εmax.
fPD 1 / ( εmin +εmax + 2 ns ) (10)
In addition to this restriction on the maximum phase detector rate, recall that there are also restrictions on the
maximum phase detector rate implied by the electrical specifications ( fPD104 MHz ) and by the minimum
continuous N divider value (fPD fVCO / NMin).
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fVCO ORDER εmin MAXIMUM POSSIBLE PHASE DETECTOR FREQUENCY (MHz)
(MHz) (ns) ε= 3.5 ns ε= 5.5 ns ε= 7.5 ns ε= 9.5 ns ε= 11.5 ns ε= 13.5 ns
Min Min Min Min Min Min
All 0 0.0 (104, fVCO / (104, fVCO / (104, fVCO / (87.0, fVCO / (74.1, fVCO / (64.5, fVCO /
12) 12) 12) 12) 12) 12)
400 4 20.0 FAIL FAIL FAIL FAIL FAIL FAIL
400 3 10.0 FAIL FAIL FAIL FAIL 26.7 26.7
400 2 5.0 FAIL 30.8 30.8 30.8 30.8 30.8
500 4 16.0 FAIL FAIL FAIL FAIL FAIL FAIL
500 3 8.0 FAIL FAIL FAIL 33.3 33.3 33.3
500 2 4.0 FAIL 38.5 38.5 38.5 38.5 38.5
600 4 13.3 FAIL FAIL FAIL FAIL FAIL 31.6
600 3 6.7 FAIL FAIL 40.0 40.0 40.0 40.0
600 2 3.3 46.2 46.2 46.2 46.2 46.2 46.2
1200 4 6.7 FAIL FAIL 63.2 63.2 63.2 63.2
1200 3 3.3 80.0 80.0 80.0 80.0 74.1 64.5
1200 2 1.7 92.3 92.3 92.3 87.0 74.1 64.5
1530 4 5.2 FAIL 80.3 80.3 80.3 74.1 64.5
1530 3 2.6 102.0 102.0 102.0 87.0 74.1 64.5
1530 2 1.3 104.0 104.0 104.0 87.0 74.1 64.5
1800 4 4.4 FAIL 91.8 91.8 87.0 74.1 64.5
1800 3 2.2 104.0 104.0 104.0 87.0 74.1 64.5
1800 2 1.1 104.0 104.0 104.0 87.0 74.1 64.5
2000 4 4.0 FAIL 100.0 100.0 87.0 74.1 64.5
2000 3 2.0 104.0 104.0 104.0 87.0 74.1 64.5
2000 2 1.0 104.0 104.0 104.0 87.0 74.1 64.5
3000 4 2.7 104.0 104.0 104.0 87.0 74.1 64.5
3000 3 1.3 104.0 104.0 104.0 87.0 74.1 64.5
3000 2 0.7 104.0 104.0 104.0 87.0 74.1 64.5
4000 4 2.0 104.0 104.0 104.0 87.0 74.1 64.5
4000 3 1.0 104.0 104.0 104.0 87.0 74.1 64.5
4000 2 0.5 104.0 104.0 104.0 87.0 74.1 64.5
In the previous table, consider the case of operating in integer mode with ORDER=0. For this case, lock detect
can theoretically work for all VCO frequencies provided that the phase detector frequency does not violate the
maximum possible value. For instance, it would be an invalid condition to operate in integer mode with a VCO
frequency of 900 MHz and a phase detector frequency of 100 MHz because 100 MHz exceeds the limit of 900
MHz/12 = 75 MHz. If the phase detector was lowered to 75 MHz to meet this restriction, then this condition would
be valid provided that the window size was programmed to be 9.5 ns or less.
Consider another example of a 400 MHz VCO frequency with a fourth order modulator. Because the minimum
window size of 20 ns is above the maximum programmable value of 13.5 ns, digital lock detect cannot be used
in this configuration. If the modulator order was reduced to 2nd order, then it would function provided that the
phase detector frequency was less 30.8 MHz.
9.6.1.8.13 FSK - Frequency Shift Keying
This bit enables a binary FSK modulation mode using the PLL N counter. Consult the applications section for
more details.
FSK FSK MODE
0 Disabled
1 Enabled
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9.6.1.9 Register R2
This word contains all the bits of the fractional denominator. These bits apply if the device is being used
fractional mode.
9.6.1.9.1 PLL_DEN[21:0] -- Fractional Denominator
These bits determine the fractional denominator.
PLL_DEN[21:0]
Fractional
Denominator
0 0000000000000000000000
... ......................
4194303 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1
9.6.1.10 Registers R1 and R0
Both registers R1 and R0 contain information for the PLL R counter, N counter, and fractional numerator. The
action of programming register R0, even to the same value, runs the VCO calibration when the device has the
internal VCO operating. There are some programming words that are split across these two registers.
9.6.1.10.1 PLL_R[11:0] -- PLL R Divider Value
The R divider divides the OSCin signal. Note that if the doubler is enabled, the R divider is bypassed.
PLL_R[11:0]
0 Illegal State
1000000000001
2000000000010
3000000000011
... ... ... ... ... ... ... ... ... ... ... ... ...
4095 1 1 1 1 1 1 1 1 1 1 1 1
9.6.1.10.2 PLL_N[17:0] PLL N Divider Value
When using integer mode, the PLL N divider value is split up into two different locations. In fractional mode, only
the 12 LSB bits of the N counter are used. Based on the order of the modulator, the range is shown in the table
below.
PLL_N[17:12] PLL_N[11:0]
<12 Divide Values below 12 are prohibited
12 000000000000001100
Intege
13 r000000000000001101
Mode
... ..................
262143 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1
12 Possible with first order modulator only
13-14 Possible with first or second order modulator
15-18 Possible with first, second, or third order modulators only
19 x x x x x x 0 0 0 0 0 0 0 1 0 0 1 1
... Fracti . . . . . . . . . . . . . . . . . .
onal
4087 x x x x x x 1 1 1 1 1 1 1 1 0 1 1 1
Mode
4088 Possible with a first, second, or third order modulator only
-4091
4092- Possible with a first or second order modulator only
4093
4094 Possible with a first order modulator only
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Note that the N divider value has a minimum value, NMin, which is implied by the modulator order. NMin is 12 for
integer mode and a first order modulator, 13 for a 2nd order modulator,15 for a third order modulator, and 19 for
a fourth order modulator. The maximum phase detector frequency given the electrical specifications, modulator
order, and VCO frequency is shown below.
fPD Min( 104 MHz, fVCO / NMin) (11)
9.6.1.10.3 PLL_NUM[21:0] -- Fractional Numerator
The fractional numerator is formed by the NUM word that is split between two registers and applies in fractional
mode only. The fractional numerator, PLL_NUM must be less than or equal to the fractional denominator,
PLL_DEN.
FRACTIONAL PLL_NUM[21:16] PLL_NUM[15:0]
NUMERATOR
0 0000000000000000000000
...
4194303 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1
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10 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
10.1 Application Information
10.1.1 Determining the Best Frequency Option of the LMX2541 to Use
When there are multiple devices that can satisfy the frequency requirement, performance characteristics can
sometimes be used to make a decision. Consider the following example of where an output frequency of 1200 to
1250 MHz is desired with a channel spacing of 100 kHz. From the frequency table, the LMX2541SQ2380E could
be used with a divide value of 2, or the LMX2541SQ3740E option could be used with a divide value of 3. This
raises the question: Which one has better performance? The following table is helpful in comparing the
performance.
PERFORMANCE WHAT MAKES WHY
CHARACTERISTIC IT BETTER
Fractional spurs at the VCO are independent of VCO frequency, but when the VCO
frequency is divided down by a factor of VCO_DIV, the fractional spurs improve by a
Fractional Spurs factor of 20·log(VCO_DIV). Also, the fractional channel spacing can be made wider at
Larger Value of
and the VCO, which makes the fractional spurs farther from the carrier.
VCO_DIV
Fraction Noise The fractional noise of the modulator is divided down in a similar way as fractional
spurs. In applications where this is dominant, this larger division can have an impact.
Consult the applications section for more information on the fractional phase noise.
Operating in the lower At the lower end of the tuning range, the VCO phase noise is less because the tuning
VCO Phase Noise frequency range of the gain is less. This provides better phase noise, even accounting for the difference in
VCO frequency.
Considering the fractional spurs and phase noise, the channel spacing at the 2380E VCO would be 200 kHz.
When this is divided by two, the offset of these spurs does not change and the spurs at the VCO output would be
reduced by a factor of 20·log(2) = 6 dB. The channel spacing at the 3740E VCO would be 300 kHz and these
spurs would be reduced by a factor of 20·log(3) = 9.5 dB. So the spurs of the 3740E option would probably be
better by virtue of the fact that they are farther from the carrier and easier to filter and also that they are divided
down more by the VCO divider. The fractional phase noise would also be (9.5 - 6) = 3.5 dB better by the same
reasoning.
Now consider the VCO phase noise. For the 3740E option, 1200 - 1250 MHz corresponds to a VCO frequency of
3600 - 3750 MHz, which is closer to the lower end of the tuning range for this device. For the 2380E option, this
would correspond to 2400 - 2500 MHz, which is closer to the higher end of the tuning range. To verify this, take
the phase noise numbers from the electrical specifications, extrapolate them to the actual frequencies, and then
subtract a factor of 20·log(VCO_DIV). For the 2380E option, this works out to -116 dBc/Hz at 1200 MHz and -
115.4 dBc/Hz at 1250 MHz. For the 3740E option, this works out to -117.4 dBc/Hz at 1200 MHz and -116.9
dBc/Hz at 1250 MHz.
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10.1.2 RFout Output Power Test Setup
The output power is tested by programming the VCO output to a desired frequency and measuring with a
spectrum analyzer. A 3 dB pad is used and this gain as well as any losses from the cable are added to the actual
measurement. As for the DC blocking capacitor, typically 100 pF is used for frequencies above 2 GHz and 0.1 uF
are used for frequencies below 2 GHz. It turns out that the measurement is not as sensitive as one would expect
to this blocking capacitor value. The output power is mainly a function of the frequency of the output buffer and
the settings of the VCO_DIV (1 or >1), OUTTERM, VCOGAIN, and DIVGAIN bits. It is not very sensitive to the
actual frequency option of the part. For instance, the LMX2541SQ2060E and the LMX2541SQ2380E both should
have similar output power at 2.2 GHz. Note that this same test setup can also be used to measure harmonics.
10.1.3 Phase Noise Measurement Test Setup
The basic setup technique for all noise tests is to measure the noise at the output of the RFout pin in Internal
VCO Mode (MODE=0) with a phase noise analyzer. For all measurements, the internal loop filter components
(LF_R3, LF_R4, LF_C3, and LF_C4) should be set to their minimum values. There are some special
considerations depending on what kind of noise is being measured.
10.1.3.1 PLL Phase Noise Measurement
To get an accurate measurement of the PLL phase noise, one needs to ensure four things.
The PLL loop bandwidth is sufficiently wide so that the VCO noise does not degrade the measurement
The measurement is not corrupted by peaking in the loop filter response.
The reference source is sufficiently clean so that this does not degrade the measurement.
A distinction is made between the PLL flat noise and the PLL 1/f noise
If the PLL loop bandwidth is made as wide as possible, then this helps keep the peaking of the loop filter
response and the VCO noise from degrading the measurement. For the ultimate accuracy, this loop filter
response can be factored into the measurement. As for the cleanliness of the reference source, the best sources
tend to be those that are fixed, such as a 100 MHz Wenzel oscillator. Signal generators tend to be noisy, but if
that is all that is available, then there are a few things that can help compensate for this. One technique is to use
a higher frequency and divide this down to a lower frequency. For instance, a 500 MHz signal divided down to 20
MHz typically has much better phase noise than a direct 20 MHz signal, if it comes from a signal generator.
Another technique is to measure the noise of the reference source and then multiply it up and then subtract it
from the measurement. For instance, if the signal source was 500 MHz and the output frequency was 4 GHz, this
signal source noise would be multiplied up by a factor of 20·log(4 GHz / 500 MHz) = 18 dB. Once that is done,
the 1/f noise and the flat noise can be measured.
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10.1.3.1.1 PLL Phase Noise Measurement - 1/f Noise
The 1/f noise dominates closer to the carrier. Special care should be taken to ensure that this is not the noise of
the reference source. The noise contribution of the reference source at the RFout pin can be calculating by
measuring what is coming into the OSCin pin and then adding a correction factor of 20·log( fRFout / fOSCin).A
characteristic of this noise is that it follows a 10 dB/decade slope. If the slope of the measured noise looks more
than 10 dB/decade, it is likely to be the reference source, not the LMX2541 device. Another characteristic of the
1/f noise is that it is independent of phase detector frequency. So to fully expose the 1/f noise, raise the phase
detector frequency as high as possible, because this lowers the flat noise, but not the 1/f noise.
10.1.3.1.2 PLL Phase Noise Measurement - Flat Noise
The PLL flat noise is measured at an offset that is not too close to the PLL 1/f noise, but also well inside the loop
bandwidth. Many phase noise profiles have a point where the PLL noise flattens to a minimum value between
the carrier and the loop bandwidth. This is where the flat noise should be measured. To measure the 1 Hz
normalized phase noise, it is often easier to measure this with a lower phase detector frequency so that this flat
noise is higher and easier to measure.
10.1.3.2 VCO Phase Noise Measurement
In order to measure the VCO phase noise, the loop filter resistors should be set to their minimum value to reduce
their noise contribution. The loop bandwidth should also be made as narrow as possible. Because the loop
bandwidth is very narrow, the cleanliness of the OSCin signal is therefore not as important. The phase noise is
measured outside the loop bandwidth of the system.
An alternative way that might not be as accurate, but is much easier to do is to lock the device to a frequency
and then set the CPT bit to 1 to disable the charge pump. The VCO will drift a little, the averaging on the
equipment should be reset after this bit is changed and one cannot take to long to take this measurement. Test
equipment that tracks the signal source is better if using this open loop technique.
10.1.3.3 Divider Phase Noise Measurement
The basic method for measuring the divider noise is to drive the divider with a noise source of known value and
then subtract away this noise. The divider noise floor tends to be flat, whereas the VCO phase noise decreases
with offset frequency, so this measurement is made at as far of an offset that is possible. When using Internal
VCO Mode (MODE=0), the raw VCO phase noise with VCO_DIV=1 can be measured. Then the VCO divider can
be programmed to get close to the desired frequency. For example, the VCO frequency can be set to 4 GHz and
the phase noise measured. This phase noise data can be saved or downloaded. Suppose then that one was
interested in the divider noise at 400 MHz. The VCO divider could be set to 10 and then 20 dB is subtracted from
the VCO phase noise to figure its contribution at 400 MHz. Provided that the actual phase noise measured at
400 MHz with VCO_DIV is above this, then one can assume that this is the noise of the divider.
An alternative way to measure this is to drive the OSCin pin and use Divider Only (MODE=2) to measure the
phase noise. This gives direct control of the frequency, but one should be sure that the noise being measured is
the device and not the frequency source.
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10.1.4 Input and Output Impedance Test Setup
A network analyzer can be used to measure the input impedance of the OSCin and ExtVCOin pin as well as the
output impedance of the RFout pin. The general technique is to connect the desired pin with no DC blocking
capacitor to a network analyzer and measure the impedance directly. The part needs to be programmed to
ensure that it is in a known state. There are some special considerations that should be taken for different
measurements of the three different impedances.
10.1.4.1 OSCin Input Impedance Measurement
For this pin, the provided calibration standards are typically good enough for a decent measurement. A single-
ended measurement at the OSCin or OSCin* pins can be made For a differential measurement, this needs to be
treated by the instrument as a two port network.
10.1.4.2 ExtVCOin Input Impedance Measurement
Because this pin goes higher in frequency, it is often difficult get a good measurement at higher frequencies
because of the effects of the board and SMA connector. One technique that can be used is instead of using the
provided calibration standards that come with the equipment, solder resistors directly to the board in order to
calibrate out the effects of the board as well. A 0 ohm resistor functions as a short, no resistor functions as an
open, and two parallel 100 ohm resistors serve as a load. These should be soldered as close to the part as
possible. Once this calibration is done, the measurement can be done as normal.
10.1.4.3 RFout Output Impedance Measurement
Although output and input impedance are not the same thing, they can be measured in a similar way. Because
this pin is a higher frequency, it is better to use the same method for calibration as used for the ExtVCOin pin.
The other consideration for the RFout pin is that there are many different settings that impact this input
impedance. When in bypass mode (VCO_DIV=1), the VCOGAIN and OUTTERM words can change the
impedance. When in divided mode (VCO_DIV>1), the DIVGAIN and OUTTERM words can impact the
impedance.
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10.1.5 ExtVCOin (NOT OSCin) Input Sensitivity Test Setup
In order to measure the ExtVCOin Input sensitivity, the part is put in External VCO mode and a signal is applied
to the ExtVCOin pin. A matching network, which is typically a 3 dB pad, is used and this loss is added to the
measured numbers as well as any potential cable losses (on the order of 1 dB). A signal is applied at a known
frequency and power and the output of the N counter is monitored using the Ftest/LD pin and setting it to look at
the N counter output divided by 2. Typically, the divide by 2 function is better because if it is not used, the duty
cycle from the Ftest/LD pin is not 50% and this can sometimes confuse frequency counters. The part is set in
fractional mode with a large fraction of 502 + 2097150/4194301 to ensure that the fractional circuitry gets fully
tested. Accounting for the extra divide by 2 from the Ftest/LD pin, the divided output frequency should be the
input frequency divided by 1005 to a 1 ppm tolerance.
10.1.6 OSCin Input Sensitivity Test Setup
10.1.6.1 Input Sensitivity Test Procedure
There are two things that are important to consider when measuring the OSCin sensitivity.
The action of setting the Ftest/LD pin to monitor the R divider output degrades the OSCin sensitivity.
The internal VCO frequency calibration is based on the OSCin signal
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DATA
CLK
LE
CE
VccPLL1
VccPLL2
OSCin
OSCin*
RFout
Ftest/LD
LMX2541
Microcontroller
VccCP1
VccCP2
VccRFout
LMK04000
Output
RFoutEN
VregRFout
VccVCO
VccDig
VregVCO
VrefVCO
100 pF
100 :
+3.3V
VccFRAC
VregFRAC
VccDiv
VccOSCin
VccBias
Bypass
4.7:
1 PF
330:
330:
18:
Ferrite
Ferrite
ExtVCOin
To Circuit
10:
1 PF
+3.3V
Ferrite
+3.3V
0.1 PF
4.7:
4.7 PF
+3.3V
0.1 PF
+3.3V
Ferrite
0.1 PF
+3.3V
Ferrite
0.1 PF
+3.3V
Ferrite
0.1 PF
+3.3V
Ferrite
0.1 PF
+3.3V
+3.3 V
+3.3 V
0.1 PF
0.1 PF
Vtune
CPout
C1_LF
R2_LF
C2_LF
FLout
R2pLF
LMX2541
SNOSB31J JULY 2009REVISED DECEMBER 2014
www.ti.com
Because of these considerations, the OSCin sensitivity needs to be measured in a closed loop test in such a way
that the internal frequency calibration is not distorting the measurement. To do this, a known frequency and
power level are set at the OSCin pin and the power level is changed until the PLL becomes more than 1 ppm off
frequency. The PLL_R divider is varied to maintain a phase detector frequency of 1 MHz to ensure that the PLL
loop does not become unstable. The frequency counter needs to be synchronized in frequency to the signal
generator. It is better to use a narrower loop bandwidth for this test because the phase noise of the PLL might
degrade when the OSCin power level gets to close to the sensitivity limits. Typically, a 0.1 uF capacitor is used
as a DC block for the signal at the OSCin pin. The sensitivity at the OSCin pin is measured with a single-ended
input.
This test can be run in internal VCO mode (MODE=0) or external VCO mode (MODE=1). When doing the test in
internal VCO mode, the part needs to be initially locked and then the R counter is programmed to adjust for the
OSCin frequency. However, in internal VCO mode, the PLL_N counter cannot be programmed, because the
action of programming this counter activates the internal VCO frequecy calibration, which can interfere with the
test.
10.1.6.2 OSCin Slew Rate Tests
There are two methods that can be used to test the OSCin slew rate. One method is to use test equipment that
actually allows the user to vary the slew rate directly, but this type of equipment typically does not give the user
enough range of adjustability. Another method is to calculate the slew rate based on the slope of a sine wave of
known frequency and amplitude. For this method, the slew rate can be calculated from the frequency and peak
to peak amplitude of the OSCin signal as follows: SlewOSCin = 2 × π× fOSCin × VppOSCin
10.1.7 Typical Connections
Figure 32. Full Chip Mode, Differential OSCin
56 Submit Documentation Feedback Copyright © 2009–2014, Texas Instruments Incorporated
Product Folder Links: LMX2541
VccPLL1
VccPLL2
OSCin
OSCin*
RFout
Vtune
CPout
LMX2541
Microcontroller
VccCP1
VccCP2
VccRFout
C1_LF
R2_LF
VregRFout
VccVCO
VccDig
VregVCO
VrefVCO
100 pF
51:
C2_LF
FLout
+3.3V
VccFRAC
VregFRAC
VccDiv
VccOSCin
VccBias
Bypass
4.7:
1 PF
18:
Ferrite
Ferrite
ExtVCOin
+3.3V
Ferrite
+3.3V
+3.3V
0.1 PF
+3.3V
Ferrite
0.1 PF
+3.3V
Ferrite
0.1 PF
+3.3V
Ferrite
0.1 PF
+3.3V
Ferrite
0.1 PF
+3.3V
+3.3V
+3.3V
0.1 PF
0.1 PF
18:
18:
To
Circuit
C4_LF
R4_LF
C3_LF
R2pLF
R3_LF
51:
1 PF
0.1 PF
4.7:
DATA
CLK
LE
CE
Ftest/LD
RFoutEN
LMX2541
www.ti.com
SNOSB31J JULY 2009REVISED DECEMBER 2014
Figure 33. External VCO Mode, Single-Ended OSCin, RFout Pin not Used
For both of the able connection diagrams, L1, L2, and Lmid should be left open, but the pads should be placed
on these pins for optimal solderability. The GND pins should have separate vias to ground and the GND DAP
also needs to be grounded with 9 vias. The VccVCO, VccRFout, and VccDiv pins can be shorted to the power
plane, but need to be connected. For the other Vcc pins, ferrite beads and bypass capacitors may be added in
order to improve spurious performance. VregVCO and VrefVCO need to be connected even if the internal VCO
is not being used. The VregRFout pin only needs to be connected if the RFout pin is being used. When a block is
not used, it is always still necessary to connect the corresponding Vcc pin, but the bypassing is not necessary,
as shown in the above diagram for the external VCO mode.
10.1.7.1 OSCin/OSCin* Connections
For single-ended operation, the signal is driven into the OSCin pin. The OSCin* pin is terminated the same as
the OSCin pin. This is a typical case if the device is driven by a TCXO. For both single-ended and differential
operation, the input is AC coupled because the OSCin/OSCin* pins self-bias to an optimal DC operating point.
Better performance for both phase noise and fractional spurs is obtained for signals with a higher slew rate, such
as a square wave. This is especially important for lower frequency signals, because slower frequency sine waves
have lower slew rates. Fractional spurs are typically about four dB better when running in differential mode as
opposed to single-ended mode.
Copyright © 2009–2014, Texas Instruments Incorporated Submit Documentation Feedback 57
Product Folder Links: LMX2541
OSCin
OSCin*
LMX2541
OSCin
OSCin*
0.1 PF
0.1 PF
100:
LMX2541
OSCin
OSCin*
50:
0.1 PF
0.1 PF
50:
LMX2541
LMX2541
SNOSB31J JULY 2009REVISED DECEMBER 2014
www.ti.com
Figure 34. Single-Ended Operation
For differential operation, as is the case when using an LVDS or LVPECL driver, a 100 Ωresistor is placed
across the OSCin/OSCin* traces
Figure 35. Differential Operation
A third way to configure the device is in crystal mode (XO = 1). For this, the crystal is placed across the
OSCin/OSCin* pins. Crystals are specified for a specific load capacitance, CLoad. The load capacitors shown in
the figure each have a value of CLoad/2.
Figure 36. Crystal Mode Operation
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Product Folder Links: LMX2541
LMX2541
www.ti.com
SNOSB31J JULY 2009REVISED DECEMBER 2014
10.2 Typical Application
10.2.1 Design Requirements
Consider generating 4000.25 MHz from a 100-MHz XO input frequency.
For this design example, use the parameters listed in Table 19 as the user-input parameters.
Table 19. Design Parameters
PARAMETER VALUE REASON FOR CHOOSING
Fout 4000.25 MHz This parameter was given.
Fosc 100 MHz This parameter was given.
Although the phase detector could be chosen to be 100 MHz, it is being chosen lower
Fpd 25 MHz to reduce the integer boundary spur at 250 kHz offset.
A wider bandwidth gives better in-band phase noise, but then the integer boundary
Loop Bandwidth 53 kHz spur is higher. This gives a reasonable trade-off.
Kpd 3.2 mA Maximum charge pump gain is best for the lowest PLL phase noise.
C1_LF 2.2 nF
C2_LF 22 nF The external loop filter components can be found using design software from TI.
R2_LF 470 Ω
C3_LF 20 pF The internal loop filter was chosen with the resistors to a lower setting to allow a wider
C4_LF 100 pF bandwidth. However, it is best to put the most capacitance on C4 as it gives more
R3_LF 1 kΩfiltering.
R4_LF 200 Ω
Copyright © 2009–2014, Texas Instruments Incorporated Submit Documentation Feedback 59
Product Folder Links: LMX2541
Offset (Hz)
Phase Noise (dBc/Hz)
1x1021x1031x1041x1051x1061x1071x108
-160
-150
-140
-130
-120
-110
-100
-90
-80
-70
D001
Fpd = 50 MHz , 5.8 mRad
Fpd =100 MHz, 5.1 mRad
Input Signal, 5.1 mRad
Offset (Hz)
Phase Noise (dBc/Hz)
1x1021x1031x1041x1051x1061x1071x108
-160
-150
-140
-130
-120
-110
-100
-90
-80
-70
D001
Fpd=50MHz, 4.7 mRad
Fpd=100MHz, 4.4 mRad
Input Signal, 4.2 mRad
LMX2541
SNOSB31J JULY 2009REVISED DECEMBER 2014
www.ti.com
10.2.2 Detailed Design Procedure
Use the WEBENCH® Clock Architect to calculate the values of C2_LF and R2_LF.
Use C4 for the largest capacitance because it offers more filtering.
10.2.3 Application Curves
For Figure 38 and Figure 39, a third order modulator with dithering disabled was used with a fractional
denominator of 500000. The charge pump gain was 32X and the loop filter components were C1 = 2.2 nF, C2 =
22 nF, R2 = 470 Ω. The internal loop filter components were C3_LF = 20 pF, C4_LF = 100 pF, R3_LF = 1 kΩ,
R4_LF = 200 Ω.
See Phase Noise Measurement Test Setup. The VCO Frequency is The OSCin signal was a 500 MHz differential LVPECL output of the
2720.1 MHz. The OSCin signal was a 500 MHz differential LVPECL LMK04033.
output of the LMK4033. Figure 38. LMX2541SQ3320E System Phase Noise
Figure 37. LMX2541SQ2690 System Phase Noise
60 Submit Documentation Feedback Copyright © 2009–2014, Texas Instruments Incorporated
Product Folder Links: LMX2541
Offset (Hz)
Phase Noise (dBc/Hz)
1x1021x1031x1041x1051x1061x1071x108
-160
-150
-140
-130
-120
-110
-100
-90
-80
-70
D001
Fpd=50 MHZ, 3.3 mRad
Fpd=100 MHz, 2.8 mRad
Input Signal, 3.0 mRad
Temperature (C)
CHANGE in VCO Noise (dB)
-40 -20 0 20 40 60 80 100
-3
-2.4
-1.8
-1.2
-0.6
0
0.6
1.2
1.8
2.4
3
D001
Offset=10 kHz
Offset=100 kHz
Offset=1 MHz
Offset=20 MHz
LMX2541
www.ti.com
SNOSB31J JULY 2009REVISED DECEMBER 2014
The above plot shows how much the VCO phase noise typically
change over temperature relative to room temperature. The typical
values for represent an average over all frequencies and part
options and therefore there are some small variations over part
options and frequencies that are not shown. VCO phase noise
numbers room temperature are reported in the electrical
The OSCin signal was a 500 MHz differential LVPECL output of the specifications. A negative value indicates a phase noise
LMK04033. improvement.
Figure 39. LMX2541SQ3740E System Phase Noise Figure 40. VCO Phase Noise Degradation vs. Temperature
and Offset
(VCO Relocked at Each Temperature Vcc = 3.3 V,
AC_TEMP_COMP = 5)
Figure 42. Integer Boundary Spur Measurement
Figure 41. Phase Noise at 4000.25 MHz
11 Power Supply Recommendations
The LMX2541 has an internal low-noise regulator for the internal VCO, which makes it more immune to supply
noise than many devices with an integrated VCO. That being said, the VCO is extremely sensitive to noise so it
is recommended to use an LDO or clean power supply for this device; a switching power supply would likely
generate unwanted spurs on the output.
Copyright © 2009–2014, Texas Instruments Incorporated Submit Documentation Feedback 61
Product Folder Links: LMX2541
LMX2541
SNOSB31J JULY 2009REVISED DECEMBER 2014
www.ti.com
12 Layout
12.1 Layout Guidelines
12.1.1 Configuring the LMX2541 for Optimal Performance
1. Determine the Channel Spacing (fCH)
For a system that has a VCO that tunes over several frequencies, the channel spacing is the tuning
increment. In the case that the VCO frequency is fixed, this channel spacing is the greatest number that
divides both the VCO frequency and the OSCin frequency.
2. Determine OSCin Frequency (fOSCin)
If the OSCin frequency is not already determined, then there are several considerations. A higher
frequency is generally, but not always, preferable. One reason for this is that it has a higher slew rate if it
is a sine wave. Another reason is that the clock for the VCO frequency calibration is based on the OSCin
frequency and in general will run faster for higher OSCin frequencies.
Although a higher OSCin frequency is desirable, there are also reasons to use a lower frequency. If the
OSCin frequency is strategically chosen, the worst case fractional spur channels might fall out of band.
Also, if the OSCin frequency can be chosen such that the fractional denominator can avoid factors of 2
and/or 3, the sub-fractional spurs can be reduced.
3. Determine the Phase Detector Frequency (fPD) , Charge Pump Gain (KPD) and Fractional Denominator
(FDEN)
In general, choose the highest phase detector frequency and charge pump gain, unless it leads to loop
filter capacitor values that are unrealistically large for a given loop bandwidth. In this case, reducing either
the phase detector frequency or the charge pump gain can yield more feasible capacitor values. Other
reasons for not using the highest charge pump gain is to allow some adjustment margin to compensate
for changes in the VCO gain or allow the use of Fastlock.
For choosing the fractional denominator, start with FDEN = fPD/fCH. As discussed previously, there might
be reasons to choose larger equivalent fractions.
4. Design the Loop Filter
5. Determine the Modulator Order
6. Determine Dithering and Potential Larger Equivalent Fractional Value
62 Submit Documentation Feedback Copyright © 2009–2014, Texas Instruments Incorporated
Product Folder Links: LMX2541
LMX2541
www.ti.com
SNOSB31J JULY 2009REVISED DECEMBER 2014
12.2 Layout Example
Figure 43. Layout
Copyright © 2009–2014, Texas Instruments Incorporated Submit Documentation Feedback 63
Product Folder Links: LMX2541
LMX2541
SNOSB31J JULY 2009REVISED DECEMBER 2014
www.ti.com
13 Device and Documentation Support
13.1 Device Support
For the Clock Architect tool, go to http://www.ti.com/lsds/ti/analog/webench/clock-architect.page
13.2 Trademarks
All trademarks are the property of their respective owners.
13.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
13.4 Glossary
SLYZ022 TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
14 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
64 Submit Documentation Feedback Copyright © 2009–2014, Texas Instruments Incorporated
Product Folder Links: LMX2541
PACKAGE OPTION ADDENDUM
www.ti.com 6-Feb-2020
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
LMX2541SQ2060E/NOPB ACTIVE WQFN NJK 36 1000 Green (RoHS
& no Sb/Br) SN Level-3-260C-168 HR -40 to 85 412060E
LMX2541SQ2380E/NOPB ACTIVE WQFN NJK 36 1000 Green (RoHS
& no Sb/Br) SN Level-3-260C-168 HR -40 to 85 412380E
LMX2541SQ2690E/NOPB ACTIVE WQFN NJK 36 1000 Green (RoHS
& no Sb/Br) SN Level-3-260C-168 HR -40 to 85 412690E
LMX2541SQ3030E/NOPB ACTIVE WQFN NJK 36 1000 Green (RoHS
& no Sb/Br) SN Level-3-260C-168 HR -40 to 85 413030E
LMX2541SQ3320E/NOPB ACTIVE WQFN NJK 36 1000 Green (RoHS
& no Sb/Br) SN Level-3-260C-168 HR -40 to 85 413320E
LMX2541SQ3740E/NOPB ACTIVE WQFN NJK 36 1000 Green (RoHS
& no Sb/Br) SN Level-3-260C-168 HR -40 to 85 413740E
LMX2541SQE2060E/NOPB ACTIVE WQFN NJK 36 250 Green (RoHS
& no Sb/Br) SN Level-3-260C-168 HR -40 to 85 412060E
LMX2541SQE2380E/NOPB ACTIVE WQFN NJK 36 250 Green (RoHS
& no Sb/Br) SN Level-3-260C-168 HR -40 to 85 412380E
LMX2541SQE2690E/NOPB ACTIVE WQFN NJK 36 250 Green (RoHS
& no Sb/Br) SN Level-3-260C-168 HR -40 to 85 412690E
LMX2541SQE3030E/NOPB ACTIVE WQFN NJK 36 250 Green (RoHS
& no Sb/Br) SN Level-3-260C-168 HR -40 to 85 413030E
LMX2541SQE3320E/NOPB ACTIVE WQFN NJK 36 250 Green (RoHS
& no Sb/Br) SN Level-3-260C-168 HR -40 to 85 413320E
LMX2541SQE3740E/NOPB ACTIVE WQFN NJK 36 250 Green (RoHS
& no Sb/Br) SN Level-3-260C-168 HR -40 to 85 413740E
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
PACKAGE OPTION ADDENDUM
www.ti.com 6-Feb-2020
Addendum-Page 2
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
LMX2541SQ2060E/NOPB WQFN NJK 36 1000 330.0 16.4 6.3 6.3 1.5 12.0 16.0 Q1
LMX2541SQ2380E/NOPB WQFN NJK 36 1000 330.0 16.4 6.3 6.3 1.5 12.0 16.0 Q1
LMX2541SQ2690E/NOPB WQFN NJK 36 1000 330.0 16.4 6.3 6.3 1.5 12.0 16.0 Q1
LMX2541SQ3030E/NOPB WQFN NJK 36 1000 330.0 16.4 6.3 6.3 1.5 12.0 16.0 Q1
LMX2541SQ3320E/NOPB WQFN NJK 36 1000 330.0 16.4 6.3 6.3 1.5 12.0 16.0 Q1
LMX2541SQ3740E/NOPB WQFN NJK 36 1000 330.0 16.4 6.3 6.3 1.5 12.0 16.0 Q1
LMX2541SQE2060E/NOP
BWQFN NJK 36 250 178.0 16.4 6.3 6.3 1.5 12.0 16.0 Q1
LMX2541SQE2380E/NOP
BWQFN NJK 36 250 178.0 16.4 6.3 6.3 1.5 12.0 16.0 Q1
LMX2541SQE2690E/NOP
BWQFN NJK 36 250 178.0 16.4 6.3 6.3 1.5 12.0 16.0 Q1
LMX2541SQE3030E/NOP
BWQFN NJK 36 250 178.0 16.4 6.3 6.3 1.5 12.0 16.0 Q1
LMX2541SQE3320E/NOP
BWQFN NJK 36 250 178.0 16.4 6.3 6.3 1.5 12.0 16.0 Q1
LMX2541SQE3740E/NOP
BWQFN NJK 36 250 178.0 16.4 6.3 6.3 1.5 12.0 16.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 20-Sep-2016
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
LMX2541SQ2060E/NOPB WQFN NJK 36 1000 367.0 367.0 38.0
LMX2541SQ2380E/NOPB WQFN NJK 36 1000 367.0 367.0 38.0
LMX2541SQ2690E/NOPB WQFN NJK 36 1000 367.0 367.0 38.0
LMX2541SQ3030E/NOPB WQFN NJK 36 1000 367.0 367.0 38.0
LMX2541SQ3320E/NOPB WQFN NJK 36 1000 367.0 367.0 38.0
LMX2541SQ3740E/NOPB WQFN NJK 36 1000 367.0 367.0 38.0
LMX2541SQE2060E/NOP
BWQFN NJK 36 250 210.0 185.0 35.0
LMX2541SQE2380E/NOP
BWQFN NJK 36 250 210.0 185.0 35.0
LMX2541SQE2690E/NOP
BWQFN NJK 36 250 210.0 185.0 35.0
LMX2541SQE3030E/NOP
BWQFN NJK 36 250 210.0 185.0 35.0
LMX2541SQE3320E/NOP
BWQFN NJK 36 250 210.0 185.0 35.0
LMX2541SQE3740E/NOP
BWQFN NJK 36 250 210.0 185.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 20-Sep-2016
Pack Materials-Page 2
MECHANICAL DATA
NJK0036A
www.ti.com
SQA36A (Rev A)
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