2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications * High-Fidelity Audio Output Amplifier * General Purpose Power Amplifier Features * * * * * * * * * High Current Capability: IC = 17A. High Power Dissipation : 150watts. High Frequency : 30MHz. High Voltage : VCEO=250V Wide S.O.A for reliable operation. Excellent Gain Linearity for low THD. Complement to 2SA1943/FJL4215. Thermal and electrical Spice models are available. Same transistor is also available in: -- TO3P package, 2SC5242/FJA4313 : 130 watts -- TO220 package, FJP5200 : 80 watts -- TO220F package, FJPF5200 : 50 watts Absolute Maximum Ratings* Symbol TO-264 1 1.Base 2.Collector 3.Emitter Ta = 25C unless otherwise noted Parameter Ratings Units BVCBO Collector-Base Voltage 250 V BVCEO Collector-Emitter Voltage 250 V BVEBO Emitter-Base Voltage 5 V IC Collector Current(DC) 17 A IB Base Current 1.5 A PD Total Device Dissipation(TC=25C) Derate above 25C 150 1.04 W W/C TJ, TSTG Junction and Storage Temperature - 50 ~ +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics* Symbol RJC Ta=25C unless otherwise noted Parameter Thermal Resistance, Junction to Case Max. Units 0.83 C/W * Device mounted on minimum pad size hFE Classification Classification R O hFE1 55 ~ 110 80 ~ 160 (c) 2009 Fairchild Semiconductor Corporation 2SC5200/FJL4315 Rev. C www.fairchildsemi.com 1 2SC5200/FJL4315 -- NPN Epitaxial Silicon Transistor January 2009 a Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=5mA, IE=0 250 V BVCEO Collector-Emitter Breakdown Voltage IC=10mA, RBE= 250 V BVEBO Emitter-Base Breakdown Voltage IE=5mA, IC=0 5 V ICBO Collector Cut-off Current VCB=230V, IE=0 5.0 A IEBO Emitter Cut-off Current VEB=5V, IC=0 5.0 A hFE1 DC Current Gain VCE=5V, IC=1A 55 hFE2 DC Current Gain VCE=5V, IC=7A 35 VCE(sat) Collector-Emitter Saturation Voltage IC=8A, IB=0.8A 0.4 3.0 V VBE(on) Base-Emitter On Voltage VCE=5V, IC=7A 1.0 1.5 V fT Current Gain Bandwidth Product VCE=5V, IC=1A 30 MHz Cob Output Capacitance VCB=10V, f=1MHz 200 pF 160 60 * Pulse Test: Pulse Width=20s, Duty Cycle2% Ordering Information Part Number Marking Package Packing Method 2SC5200RTU C5200R TO-264 TUBE hFE1 R grade 2SC5200OTU C5200O TO-264 TUBE hFE1 O grade FJL4315RTU J4315R TO-264 TUBE hFE1 R grade FJL4315OTU J4315O TO-264 TUBE hFE1 O grade (c) 2009 Fairchild Semiconductor Corporation 2SC5200/FJL4315 Rev. C Remarks www.fairchildsemi.com 2 2SC5200/FJL4315 -- NPN Epitaxial Silicon Transistor Electrical Characteristics* T =25C unless otherwise noted 16 IB=200mA IB = 180mA IB = 160mA IB = 140mA IB = 120mA 12 Vce=5V o Tj=125 C hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 14 IB = 100mA 10 IB = 80mA 8 IB = 60mA 6 IB = 40mA 4 2 o Tj=25 C 100 o Tj=-25 C 10 IB = 0 0 0 2 4 6 8 10 12 14 16 18 20 1 1 VCE[V], COLLECTOR-EMITTER VOLTAGE 10 Ic[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain ( R grade ) o hFE, DC CURRENT GAIN Tj=125 C Tj=25 C Vce(sat)[mV], SATURATION VOLTAGE 10000 o Vce=5V 100 o Tj=-25 C 10 1 1 10 Ic=10Ib 1000 o o 100 o Tj=-25 C 10 1 0.1 1 10 Ic[A], COLLECTOR CURRENT Ic[A], COLLECTOR CURRENT Figure 3. DC current Gain ( O grade ) Figure 4. Collector-Emitter Saturation Voltage 10000 Vbe(sat)[mV], SATURATION VOLTAGE 12 VCE = 5V 10 IC[A], COLLECTOR CURRENT Tj=25 C Tj=125 C 8 6 4 2 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 o Tj=-25 C o Tj=25 C 1000 o Tj=125 C 100 0.1 1 10 Ic[A], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 5. Base-Emitter On Voltage Figure 6. Base-Emitter Saturation Voltage (c) 2009 Fairchild Semiconductor Corporation 2SC5200/FJL4315 Rev. C Ic=10Ib www.fairchildsemi.com 3 2SC5200/FJL4315 -- NPN Epitaxial Silicon Transistor Typical Characteristics 100 IC MAX. (Pulsed*) 0.9 IC [A], COLLECTOR CURRENT o Transient Thermal Resistance, Rthjc[ C / W] 1.0 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1E-6 1E-5 1E-4 1E-3 0.01 0.1 10ms* 10 IC MAX. (DC) 100ms* DC 1 0.1 *SINGLE NONREPETITIVE o PULSE TC=25[ C] 0.01 1 1 10 100 Pulse duration [sec] VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 7. Power Derating Figure 8. Safe Operating Area 160 PC[W], POWER DISSIPATION 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 9. Power Derating (c) 2009 Fairchild Semiconductor Corporation 2SC5200/FJL4315 Rev. C www.fairchildsemi.com 4 2SC5200/FJL4315 -- NPN Epitaxial Silicon Transistor Typical Characteristics 2SC5200/FJL4315 -- NPN Epitaxial Silicon Transistor Package Dimensions (8.30) (1.00) (2.00) 20.00 0.20 0 1.50 0.20 ) (7.00) (7.00) 2.50 0.10 4.90 0.20 (1.50) (1.50) 2.50 0.20 3.00 0.20 (1.50) 20.00 0.50 0.2 .00 (2.00) (11.00) ) .00 2 (R (R1 (0.50) 0 o3.3 (9.00) (9.00) (8.30) (4.00) 20.00 0.20 6.00 0.20 TO-264 +0.25 1.00 -0.10 +0.25 0.60 -0.10 2.80 0.30 (2.80) 5.45TYP [5.45 0.30] (0.15) (1.50) 3.50 0.20 5.00 0.20 5.45TYP [5.45 0.30] Dimensions in Millimeters (c) 2009 Fairchild Semiconductor Corporation 2SC5200/FJL4315 Rev. C www.fairchildsemi.com 5 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor (c) 2009 Fairchild Semiconductor Corporation 2SC5200/FJL4315 Rev. C www.fairchildsemi.com 6