DSS2x101-015A Schottky Diode VRRM = 150 V I FAV = 2x 100 A VF = 0.77 V High Performance Schottky Diode Low Loss and Soft Recovery Parallel legs Part number DSS2x101-015A Backside: isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) Very low Vf Extremely low switching losses Low Irm values Improved thermal behaviour High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Rectifiers in switch mode power supplies (SMPS) Free wheeling diode in low voltage converters Isolation Voltage: 3000 V~ Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Base plate: Copper internally DCB isolated Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. (c) 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200210b DSS2x101-015A Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C VRRM max. repetitive reverse blocking voltage TVJ = 25C IR reverse current, drain current VF forward voltage drop min. typ. TVJ = 25C 4 mA TVJ = 125C 10 mA I F = 100 A TVJ = 25C 0.91 V 1.09 V 0.77 V TVJ = 125 C I F = 200 A VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TC = 110 C rectangular 0.99 V T VJ = 150 C 100 A TVJ = 150 C 0.53 V 2.1 m d = 0.5 for power loss calculation only 0.4 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45C CJ junction capacitance VR = TVJ = 25C IXYS reserves the right to change limits, conditions and dimensions. (c) 2020 IXYS all rights reserved V VR = 150 V I F = 100 A average forward current 150 VR = 150 V I F = 200 A I FAV max. Unit 150 V K/W 0.1 TC = 25C 24 V f = 1 MHz 962 Data according to IEC 60747and per semiconductor unless otherwise specified 310 W 1.40 kA pF 20200210b DSS2x101-015A Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 150 Unit A -40 150 C -40 125 C 150 C 30 Weight g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL terminal to terminal 10.5 terminal to backside 8.6 t = 1 second isolation voltage t = 1 minute 50/60 Hz, RMS; IISOL 1 mA 3.2 mm 6.8 mm 3000 V 2500 V Product Marking Logo XXXXX (R) yywwZ 1234 Date Code Location Ordering Standard Part Number UL Lot# Ordering Number DSS2x101-015A Equivalent Circuits for Simulation I V0 R0 Marking on Product DSS2x101-015A * on die level Delivery Mode Tube Code No. 478474 T VJ = 150C Schottky V 0 max threshold voltage 0.53 V R0 max slope resistance * 0.2 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2020 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20200210b DSS2x101-015A Outlines SOT-227B (minibloc) 2 1 3 4 IXYS reserves the right to change limits, conditions and dimensions. (c) 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200210b DSS2x101-015A Schottky 200 100 10000 100 10 TVJ=150C IR IF [mA] 10 CT 125C 1 0.1 [A] [pF] 75C TVJ = 150C 125C 25C TVJ = 25C 1000 100C 0.01 50C 25C 1 0.0 0.001 0.2 0.4 0.6 0.8 1.0 100 0 40 80 120 160 VR [V] VF [V] 40 80 120 160 VR [V] Fig. 2 Typ. reverse current IR vs. reverse voltage VR Fig. 1 Max. forward voltage drop characteristics 0 Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 140 160 120 120 100 DC IF(AV) P(AV) 80 d = 0.5 [A] d= DC 0.5 0.33 0.25 0.17 0.08 80 [W] 60 40 40 20 0 0 0 40 80 120 0 160 50 TC [C] 100 150 IF(AV) [A] Fig. 4 Average forward current IF(AV) vs. case temp. TC Fig. 5 Forward power loss characteristics 1 ZthJC D=0.5 0.33 0.25 0.1 0.17 0.08 Single Pulse [K/W] 0.01 0.001 Note: All curves are per diode 0.01 0.1 1 10 t [s] Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, conditions and dimensions. (c) 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200210b