DSS2x101-015A
2
3
1
4
Low Loss and Soft Recovery
High Performance Schottky Diode
Parallel legs
Schottky Diode
Part number
DSS2x101-015A
Backside: isolated
FAV
F
V V0.77
RRM
100
150
=
V=V
I=A
2x
Features / Advantages: Applications: Package:
● Very low Vf
● Extremely low switching losses
● Low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
SOT-227B (minibloc)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
● Isolation Voltage: V~
3000
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
Disclaimer Notice
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions. 20200210bData according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved
DSS2x101-015A
V = V
Symbol
Definition
Ratings
typ.
max.
I
R
V
IA
V
F
0.91
R0.4 K/W
R
min.
100
V
RSM
V
4T = 25°C
VJ
T = °C
VJ
mA10V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
110
P
tot
310 WT = 25°C
C
RK/W
100
150
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions
Unit
1.09
T = 25°C
VJ
125
V
F0
V
0.53T = °C
VJ
150
r
F
2.1
mΩ
V
0.77T = °C
VJ
I = A
F
V
100
0.99
I = A
F
200
I = A
F
200
threshold voltage
slope resistance for power loss calculation only
mA
125
V
RRM
V
150
max. repetitive reverse blocking voltage
T = 25°C
VJ
C
J
962
junction capacitance
V = V24 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current
V = 0 V
R
T = °C
VJ
150
1.40 kA
150
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Schottky
150
0.1
IXYS reserves the right to change limits, conditions and dimensions. 20200210bData according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved
DSS2x101-015A
Ratings
1234yywwZ
XXXXX
Product Marking
Logo
Part
Number
Date
Code
Lot#Location
®
UL
Package
T
op
°C
M
D
Nm1.5
mounting torque
1.1
T
VJ
°C150
virtual junction temperature
-40
Weight g30
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
Unit
M
T
Nm1.5
terminal torque
1.1
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
10.5 3.2
8.6 6.8
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
150 A
per terminal
125-40
terminal to terminal
SOT-227B (minibloc)
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
DSS2x101-015A 478474Tube 10DSS2x101-015AStandard
3000
ISOL
T
stg
°C150
storage temperature
-40
2500
threshold voltage
V0.53
mΩ
V
0 max
R
0 max
slope resistance *
0.2
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Schottky
°C
* on die level
150
IXYS reserves the right to change limits, conditions and dimensions. 20200210bData according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved
DSS2x101-015A
2
3
1
4
Outlines SOT-227B (minibloc)
IXYS reserves the right to change limits, conditions and dimensions. 20200210bData according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved
DSS2x101-015A
0.0 0.2 0.4 0.6 0.8 1.0
1
10
100
0 40 80 120 160
0.001
0.01
0.1
1
10
100
0 50 100 150
0
20
40
60
80
100
120
140
0.001 0.01 0.1 1 10
0.01
0.1
1
0 40 80 120 160
0
40
80
120
160
0 40 80 120 160
100
1000
10000
125°C
T
VJ
=
150°C
125°C
25°C
d = 0.5
D=0.5
0.33
0.25
DC
50°C
2
00
I
F
[A]
V
F
[V]
I
R
[mA]
V
R
[V] V
R
[V]
C
T
[pF]
P
(AV)
[W]
Z
thJC
[K/W]
t [s]
Note: All curves are per diode
Fig. 1 Max. forward voltage
drop characteristics
Fig. 2 Typ. reverse current
I
R
vs. reverse voltage V
R
Fig. 3 Typ. junction capacitance
C
T
vs. reverse voltage V
R
Fig. 4 Average forward current
I
F(AV)
vs. case temp. T
C
Fig. 5 Forward power loss
characteristics
Fig. 6 Transient thermal impedance junction to case at various duty cycles
I
F(AV)
[A]
T
C
I]C°[
F(AV)
[A]
T
VJ
=150°C
100°C
75°C
25°C
T
VJ
= 25°C
d =
DC
0.5
0.33
0.25
0.17
0.08
0.17
0.08 Single Pulse
Schottky
IXYS reserves the right to change limits, conditions and dimensions. 20200210bData according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved
