RECTRON SEMICONDUCTOR MMBT5401LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) FEATURES * Power dissipation O PCM: 0.3 W(Tamb=25 C) * Collector current ICM: - 0.6 A * Collector-base voltage V(BR)CBO: - 160 V * Operating and storage junction temperature range TJ,Tstg: -55OC to+150OC SOT-23 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram 0.037(0.950)TYP 0.006(0.150) 0.003(0.080) 0.043(1.100) 0.035(0.900) 0.020(0.500) 0.012(0.300) 0.020(0.50) 0.004(0.100) 0.000(0.000) 0.100(2.550) 0.089(2.250) 0.012(0.30) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.019(2.00) 0.071(1.80) Ratings at 25 o C ambient temperature unless otherwise specified. 0.118(3.000) 0.110(2.800) Dimensions in inches and (millimeters) RATINGS SYMBOL VALUE UNITS - - mW Zener Current ( see Table "Characteristics" ) o O Max. Steady State Power Dissipation (1) @TA=25 C Derate above 25 C PD 300 Max. Operating Temperature Range TJ -55 to +150 o C -55 to +150 o C Storage Temperature Range TSTG ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient Max. Instantaneous Forward Voltage at IF= 10mA NOTES : 1. Alumina=0.4*0.3*0.024in.99.5% alumina SYMBOL MIN. TYP. MAX. R JA - - 417 VF - - - UNITS o C/W Volts 2006-3 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C = -1.0 mAdc, I B = 0) V(BR)CEO -150 - Vdc Collector-Base Breakdown Voltage (I C = -100Adc, I E = 0) V(BR)CBO -160 - Vdc Emitter-Base Breakdown Voltage (I E = -10Adc, I C = 0) V(BR)EBO -5.0 - Vdc - -50 nAdc - -50 Adc 50 - 60 240 Collector Cutoff Current (V CB = -120Vdc,IE=0) (V CE = -120Vdc, IE=0, TA= 100 OC) ICES ON CHARACTERISTICS DC Current Gain (I C = -1.0mAdc, V CE = -5.0Vdc) (I C = -10mAdc, V CE = -5.0Vdc) hFE - (I C = -50mAdc, V CE = -5.0Vdc) 50 - Collector-Emitter Saturation Voltage (I C = -10mAdc, I B = -1.0mAdc) - -0.2 - -0.5 - -1.0 - -1.0 100 300 MHz (I C = -50mAdc, I B = -5.0mAdc) Base-Emitter Saturation Voltage (I C = -10Adc, I B =-1.0mAdc) VCE(sat) VBE(sat) (I C = -50mAdc, I B = -5.0mAdc) Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (I C = -10mAdc, V CE = -10Vdc, f= 100MHz) fT Cobo - 6.0 pF Small-Signal Current Gain (V CE = -10Vdc, I C = -1.0mAdc, f= 1.0kHz) hfe 40 200 - Noise Figure (V CE = -5.0Vdc, I C = -200Adc, RS=10 , f= 1.0kHz) NF - 8.0 dB Output Capacitance (V CB = -10Vdc, I E = 0, f= 1.0MHz) RECTRON RATING AND CHARACTERISTICS CURVES ( MMBT5401LT1 ) 200 150 O hFE,CURRENT GAIN TJ=125 C 100 O 25 C 70 50 O -55 C VCE = -1.0V VCE = -5.0V 30 20 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 10 20 50 5.0 10 20 30 IC,COLLECTOR CURRENT (mA) VCE,COLLECTOR-EMITTER VOLTAGE(VOLTS) Figure 1. DC Current Gain 1.0 0.9 0.8 0.7 0.6 IC = 1.0 mA 0.5 10 mA 30 mA 100 mA 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 IB,BASE CURRENT (mA) Figure 2. Collector Saturation Region 102 1.0 0.9 VCE= 30V 101 O TJ=125 C 100 O 75 C 10-1 REVERSE O 25 C 10-2 10-3 0.3 0.2 0.1 O TJ=25 C 0.8 IC=ICES V,VOLTAGE(VOLTS) IC,COLLECTOR CURRENT (A) 103 FORWARD 0.7 0.6 VBE(sat) @ IC/IB = 10 0.5 0.4 0.3 0.2 VCE(sat) @ IC/IB = 10 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC,COLLECTOR CURRENT (mA) IC,COLLECTOR CURRENT (mA) Figure 3. Collector Cut-Off Region Figure 4. "On" Voltages 50 100 RECTRON 2.5 2.0 O 100 70 50 O TJ = -55 Cto 135 C 1.5 1.0 0.5 0 C,CAPACITANCE(pF) O V,TEMPERATURE COEFFICIENT(mV/ C) RATING AND CHARACTERISTICS CURVES ( MMBT5401LT1 ) VC for VCE(sat) -0.5 -1.0 -1.5 -2.0 -2.5 0.1 1000 700 500 VB for VBE(sat) 0.2 0.3 0.5 1.0 30 Cibo 20 10 7.0 5.0 Cobo 3.0 2.0 2.0 3.0 5.0 10 1.0 0.2 0.3 0.5 0.7 20 30 50 100 1.0 2.0 3.0 5.0 7.0 10 IC,COLLECTOR CURRENT(mA) VR,REVERSE VOLTAGE(VOLTS) Figure 5.Temperature Coefficients Figure 6.Capacitances 20 2000 IC/IB = 10 O TJ =25 C tr @ VCC = 120V 300 1000 700 500 tr @ VCC = 30V t,TIME(ns) 200 t,TIME(ns) O TJ =25 C 100 70 50 30 VCC= 120 V 10 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 tf @ VCC = 120V tf @ VCC = 30 V ts @ VCC = 120V 100 70 50 td @ VBE(off) = 1.0 V 20 300 IC/IB = 10 O TJ =25 C 30 200 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 IC,COLLECTOR CURRENT(mA) IC,COLLECTOR CURRENT(mA) Figure 7.Turn-On Time Figure 8.Turn-Off Time 200 RECTRON