kaa SGS-THOMSON D44C1/2/3/4/5/6 SM iwickogLscrromies +=D44C7/8/9/10/11/12 LINEAR AND SWITCHING APPLICATIONS DESCRIPTION The D44C1 to D44C12 are silicon multiepitaxial pla- nar transistors in TO-220 plastic package intended for linear and switching applications. TO-220 INTERNAL SCHEMATIC DIAGRAM Cc B NPN E S ope ABSOLUTE MAXIMUM RATINGS Value Symbol Parameter D44c | p4a4ac | p44c | p4aac | Unit 1/2/3 | 4/5/6 | 7/8/9 (10/11/12 Vces Collector-emitter Voltage (Vee = 0) 40 55 70 90 Vv VceEo Collector -emitter Voltage (Ip = 0) 30 45 60 80 Vv Veso Emitter-base Voltage (Ic = 0) 5 5 5 5 Vv lo Collector Current 4 A lom Collector Peak Current (tp = 10 ms) 6 A Prot Total Power Disssipation Tease < 25 C 30 Ww Tamb S$ 25 C 1.67 Ww Tstg Storage Temperature 55 to 150 C Tj Junction Temperature 150 C June 1988 1/2 801D44C1/2/3-D44C4/5/6-D44C7/8/9-D44C10/11/12 THERMAL DATA for D44C1-4-7-10 Rth j-case | Thermal Resistance Junction-case Max 4.2 CAN Rthj-amp | Thermal Resistance Junction-ambient Max 75 C/W ELECTRICAL CHARACTERISTICS (T.,,. = 25 unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit Ices Collector Cutoff Current Voe = Rated Voces 10 A (Vee =0) leBo* Emitter Cutoff Current Vea =5V 100 uA (Ic = 9) Voceo(sus) | Collector-emitter Sustaining | lc = 100 mA Voltage for D44C1-2-3 30 Vv for D44C4-5-6 45 Vv for D44C7-8-9 60 v for D44010-11-12 80 Vv Vceisat) | Collector-emitter Saturation [Ilo =1A Ip =50 mA Voltage for D44C2-3-5-6-8-9-11-12 0.5 V Ilo =1A Ip =O.1A for D44C1-4-7-10 0.5 Vv Vee(sat) | Base-emitter Saturation lo=tA Ig = 100 mA 13 Vv Voltage Nre DC Current Gain Ic =O02A Voe=H1V 40 120 lc =2A Voe=1V 20 for D44C3-6-9-12 lo =O0.2A Vor =1V 100 220 lc =1A Voe=alV 20 for D44C2-5-8-11 Ic =O2A Voe=al1V 25 lo =1A Voe=1V 10 * Pulsed : pulse duration = 300us, duty cycle = 2%. 2/2 802 ik SGS-THOMSON MICROELECTRONICS