Features
• Logic Level Input
• Input Protection (ESD)
•=Thermal shutdown with latch
•Overload protection
• Short circuit protection
• Overvoltage protection
•Current limitation
• Status feedback with external input resistor
• Analog driving possible
Product Summary
Drain source voltage VDS 60 V
On-state resistance RDS
(
on
)
28 mΩ
Current limit ID
(
lim
)
25 A
Nominal load current ID
(
ISO
)
12 A
Clamping energy E
A
S4000 mJ
Application
• All kinds of resistive, inductive and capacitive loads in switching or
linear applications
• μC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS® chip on chip tech-
nology. Providing embedded protection functions.
protection
Overvoltage
Drain
IN
ESD
HITFET
Source
Current
1
3
Over-
protection
temperature Short circuit
protection
+
dv/dt
lim itatio n lim itation
Vbb
Short circuit
protection
LOAD
2
Overload
protection
M
•AEC qualified
•Green product (RoHS compliant)
Datasheet 1 Rev. 1.0, 2009-07-20
Smart Low Side Power Switch
HITFET BTS 141TC
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter Symbol Value Unit
Drain source voltage VDS 60 V
Drain source volta
g
e for short circuit
p
rotection VDS
(
SC
)
32
Continuous input current 1)
-0.2V ≤VIN ≤ 10V
VIN < -0.2V or VIN > 10V
IIN
no limit
|IIN | ≤ 2
mA
Operating temperature T
j
- 40 ... +150 °C
Storage temperature Tst
- 55 ... +150
Power dissipation
TC = 25 °C
Ptot 149 W
Unclamped single pulse inductive energy
ID(ISO) = 12 A
EAS 4000 mJ
Electrostatic discharge voltage (Human Body Model)
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
VESD 3000 V
Load dump protection VLoadDump2) = VA + VS
VIN=low or high; VA=13.5 V
t
d
= 400 ms, RI = 2 Ω,ID=0,5*12A
t
d
= 400 ms, RI = 2 Ω,ID= 12A
VLD
100
84
Thermal resistance
junction - case: RthJC 0.84 K/W
junction - ambient: RthJ
A
75
SMD version, device on PCB: 3) RthJ
A
45
1In case of thermal shutdown a minimum sensor holding current of 500 μA has to be guaranteed (see also page 3).
2V
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2(one layer, 70μm thick) copper area for Drain connection.
PCB mounted vertical without blown air.
Datasheet 2 Rev. 1.0, 2009-07-20
Smart Low Side Power Switch
HITFET BTS 141TC
Electrical Characteristics
Parameter Symbol Values Unit
at T
j
=25°C, unless otherwise specified min. typ. max.
Characteristics
Drain source clamp voltage
T
j
= - 40 ...+ 150°C, I
D
= 10 mA
V
DS(AZ)
60 - 73 V
Off state drain current
V
DS
= 32 V, T
j
= -40...+150 °C, V
IN
= 0 V
I
DSS
- - 20 μA
Input threshold voltage
I
D
= 2,7 mA
V
IN(th)
1.3 1.7 2.2 V
Input current - normal operation, I
D
<I
D(lim)
:
V
IN
= 10 V
I
IN(1)
- 35 100 μA
Input current - current limitation mode, I
D
=I
D(lim)
:
V
IN
= 10 V
I
IN(2)
- 270 500
Input current - after thermal shutdown, I
D
=0 A:
V
IN
= 10 V
I
IN(3)
1000 2500 4000
Input holding current after thermal shutdown
1)
T
j
= 25 °C
T
j
= 150 °C
I
IN(H)
500
300
-
-
-
-
On-state resistance
V
IN
= 5 V, I
D
= 12 A, T
j
= 25 °C
V
IN
= 5 V, I
D
= 12 A, T
j
= 150 °C
R
DS(on)
-
-
31
52
34
68
mΩ
On-state resistance
V
IN
= 10 V, I
D
= 12 A, T
j
= 25 °C
V
IN
= 10 V, I
D
= 12 A, T
j
= 150 °C
R
DS(on)
-
-
25
45
28
56
Nominal load current (ISO 10483)
V
IN
= 10 V, V
DS
= 0.5 V, T
C
= 85 °C
I
D(ISO)
12 - - A
1If the input current is limited by external components, low drain currents can flow and heat the device.
Auto restart behaviour can occur.
Datasheet 3 Rev. 1.0, 2009-07-20
Smart Low Side Power Switch
HITFET BTS 141TC
Electrical Characteristics
Parameter Symbol Values Unit
at T
j
=25°C, unless otherwise specified min. typ. max.
Characteristics
Initial peak short circuit current limit
V
IN
= 10 V, V
DS
= 12 V
I
D(SCp)
- 100 - A
Current limit
1)
V
IN
= 10 V, V
DS
= 12 V, t
m
= 350 μs,
T
j
= -40...+150 °C
I
D(lim)
25 35 50
Dynamic Characteristics
Turn-on time V
IN
to 90% I
D
:
R
L
= 2,2 Ω,V
IN
= 0 to 10 V, V
bb
= 12 V
t
on
- 40 100 μs
Turn-off time V
IN
to 10% I
D
:
R
L
= 2,2 Ω,V
IN
= 10 to 0 V, V
bb
= 12 V
t
off
- 70 170
Slew rate on 70 to 50% V
bb
:
R
L
= 2,2 Ω,V
IN
= 0 to 10 V, V
bb
= 12 V
-dV
DS
/dt
on
- 1 3 V/μs
Slew rate off 50 to 70% V
bb
:
R
L
= 2,2 Ω,V
IN
= 10 to 0 V, V
bb
= 12 V
dV
DS
/dt
off
- 1 3
Protection Functions
Thermal overload trip temperature T
j
t
150 165 - °C
Unclamped single pulse inductive energy
I
D
= 12 A, T
j
= 25 °C, V
bb
= 32 V
I
D
= 12 A, T
j
= 150 °C, V
bb
= 32 V
E
AS
4000
900
-
-
-
-
mJ
Inverse Diode
Inverse diode forward voltage
I
F
= 5*12A, t
m
= 300 μS, V
IN
= 0 V
V
SD
- 1.13 - V
1Device switched on into existing short circuit (see diagram Determination of I D(lim)). If the device is in on condition
and a short circuit occurs, these values might be exceeded for max. 50 μs.
2Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2)
Datasheet 4 Rev. 1.0, 2009-07-20
Smart Low Side Power Switch
HITFET BTS 141TC
Block Diagramm
Terms Inductive and overvoltage output clamp
HITFET
IN D
VIN
IDVDS
1
IIN
S
Vbb
RL
2
3
HITFET
VZ
D
S
Short circuit behaviour
VIN
ID
ID(SCp)
t 0 tm t 2
ID(Lim)
t 1
Input circuit (ESD protection)
IN
ESD-ZD I
Source
ESD zener diodes are not designed
for DC current > 2 mA @ VIN>10V. t0: Turn on into a short circuit
tm: Measurementpoint for ID(lim)
t1: Activation of the fast temperature sensor and
regulation of the drain current to a level where
the junction temperature remains constant.
t2: Thermal shutdown caused by the second
temperature sensor, achieved by an
integrating measurement.
Datasheet 5 Rev. 1.0, 2009-07-20
Smart Low Side Power Switch
HITFET BTS 141TC
On-state resistance
RON = f(Tj); ID=12A; VIN=10V
-50 -25 0 25 50 75 100 °C 150
Tj
0
10
20
30
40
Ω
60
RDS(on)
typ.
max.
Maximum allowable power dissipation
P
tot = f(Tc)
0 20 40 60 80 100 120 °C 160
150
0
20
40
60
80
100
120
W
160
BTS 141
Ptot
On-state resistance
RON = f(Tj); ID= 12A; VIN=5V
-50 -25 0 25 50 75 100 °C 150
Tj
0
10
20
30
40
50
Ω
70
RDS(on)
typ.
max.
Typ. input threshold voltage
V
IN(th) = f(Tj); ID=2,7mA; VDS=12V
-50 -25 0 25 50 75 100 °C 150
Tj
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
2.0
VIN(th)
Datasheet 6 Rev. 1.0, 2009-07-20
Smart Low Side Power Switch
HITFET BTS 141TC
Typ. transfer characteristics
I
D
= f(V
IN
); V
DS
=12V; T
j
=25°C
0 1 2 3 4 5 6 V8
V
IN
0
4
8
12
16
20
A
28
I
D
Typ. output characteristic
I
D
= f(V
DS
); T
j
=25°C
Parameter: V
IN
0 1 2 3 4 V6
V
DS
0
5
10
15
20
25
A
35
I
D
Vin=3V
4V
5V
6V
10V
Transient thermal impedance
Z
thJC
= f(t
p
)
parameter : D=t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
2
s
t
P
-3
10
-2
10
-1
10
0
10
1
10
K/W
Z
thJC
0
0.005
0.01
0.02
0.05
0.1
0.2
D=0.5
Datasheet 7 Rev. 1.0, 2009-07-20
Smart Low Side Power Switch
HITFET BTS 141TC
Application examples:
Status signal of thermal shutdown by
monitoring input current
D
S
IN
μC Vbb
HITFET
VIN
RSt
VIN
thermal shutdown
Δ
V
μC
ΔV = R
ST
*I
IN(3)
Datasheet 8 Rev. 1.0, 2009-07-20
Smart Low Side Power Switch
HITFET BTS 141TC
Datasheet 9 Rev. 1.0, 2009-07-20
Smart Low Side Power Switch
HITFET BTS 141TC
Package Outlines
1 Package Outlines
MAX.
BA0.25 M
±0.2
GPT09085
10
8.5 1)
7.55 1)
(15)
±0.2
9.25 ±0.3
1
0...0.15
5.08
2.54
0.75 ±0.1
1.05
±0.1
1.27
4.4
B
0.5
±0.1
±0.3
2.7
4.7 ±0.5
±0.3
1.3
2.4
0...0.3 A
All metal surfaces tin plated, except area of cut.
Metal surface min. X = 7.25, Y = 6.9
Typical
1)
0.1 B
0.1
0.05
8˚
Figure 1 PG-TO263-3-2
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-
free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products.Dimensions in mm
Datasheet 10 Rev. 1.0, 2009-07-20
Smart Low Side Power Switch
HITFET BTS 141TC
Revision History
2 Revision History
Version Date Changes
Rev. 1.0 2009-07-20 released initial Datasheet
Edition 2009-07-20
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2009.
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
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Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
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