Smart Low Side Power Switch HITFET BTS 141TC Features Product Summary * Logic Level Input Drain source voltage VDS 60 V * Input Protection (ESD) On-state resistance RDS(on) 28 m *=Thermal shutdown with latch Current limit I D(lim) 25 A * Overload protection Nominal load current I D(ISO) 12 A * Short circuit protection Clamping energy EAS 4000 mJ * Overvoltage protection * Current limitation * Status feedback with external input resistor * Analog driving possible * AEC qualified * Green product (RoHS compliant) Application * All kinds of resistive, inductive and capacitive loads in switching or linear applications * C compatible power switch for 12 V and 24 V DC applications * Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS (R) chip on chip technology. Providing embedded protection functions. V bb + LOAD M D rain 2 dv /d t lim ita tio n 1 IN ESD O v erloa d pro te ctio n C u rre n t O ve rvoltag e p rotection lim ita tio n O ve rte m pe rature p ro te ctio n Sh ho rt circ c ircu it S ort uit pprotection ro te ctio n S o u rce 3 H IT F E T Datasheet 1 Rev. 1.0, 2009-07-20 Smart Low Side Power Switch HITFET BTS 141TC Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Symbol Drain source voltage VDS 60 Drain source voltage for short circuit protection Continuous input current 1) VDS(SC) 32 Value Unit V IIN mA -0.2V VIN 10V no limit VIN < -0.2V or VIN > 10V | IIN | 2 Operating temperature Tj - 40 ... +150 Storage temperature Tstg - 55 ... +150 Power dissipation Ptot 149 W EAS 4000 mJ 3000 V C TC = 25 C Unclamped single pulse inductive energy ID(ISO) = 12 A Electrostatic discharge voltage (Human Body Model) VESD according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 Load dump protection VLoadDump2) = VA + VS VLD VIN=low or high; VA =13.5 V td = 400 ms, RI = 2 , ID =0,5*12A td = 400 ms, RI = 2 , ID = 12A 100 84 Thermal resistance junction - case: R thJC 0.84 junction - ambient: R thJA 75 SMD version, device on PCB: 3) R thJA 45 K/W 1In case of thermal shutdown a minimum sensor holding current of 500 A has to be guaranteed (see also page 3). 2V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70m thick) copper area for Drain connection. PCB mounted vertical without blown air. Datasheet 2 Rev. 1.0, 2009-07-20 Smart Low Side Power Switch HITFET BTS 141TC Electrical Characteristics Parameter Symbol at Tj=25C, unless otherwise specified Values Unit min. typ. max. 60 - 73 V - - 20 A 1.3 1.7 2.2 V A Characteristics Drain source clamp voltage VDS(AZ) Tj = - 40 ...+ 150C, ID = 10 mA Off state drain current IDSS VDS = 32 V, Tj = -40...+150 C, VIN = 0 V Input threshold voltage VIN(th) ID = 2,7 mA Input current - normal operation, ID<ID(lim): VIN = 10 V IIN(1) - 35 100 Input current - current limitation mode, ID =ID(lim): VIN = 10 V IIN(2) - 270 500 Input current - after thermal shutdown, ID=0 A: VIN = 10 V IIN(3) 1000 2500 4000 Input holding current after thermal shutdown 1) IIN(H) Tj = 25 C 500 - - Tj = 150 C 300 - - R DS(on) On-state resistance VIN = 5 V, ID = 12 A, T j = 25 C VIN = 5 V, ID = 12 A, T j = 150 C m - 31 34 - 52 68 VIN = 10 V, I D = 12 A, Tj = 25 C - 25 28 VIN = 10 V, I D = 12 A, Tj = 150 C - 45 56 12 - - R DS(on) On-state resistance ID(ISO) Nominal load current (ISO 10483) A VIN = 10 V, VDS = 0.5 V, TC = 85 C 1If the input current is limited by external components, low drain currents can flow and heat the device. Auto restart behaviour can occur. Datasheet 3 Rev. 1.0, 2009-07-20 Smart Low Side Power Switch HITFET BTS 141TC Electrical Characteristics Parameter Symbol at T j=25C, unless otherwise specified Values Unit min. typ. max. - 100 - 25 35 50 ton - 40 100 toff - 70 170 -dVDS/dton - 1 3 dVDS/dtoff - 1 3 150 165 - Characteristics ID(SCp) Initial peak short circuit current limit A VIN = 10 V, VDS = 12 V ID(lim) Current limit 1) VIN = 10 V, VDS = 12 V, tm = 350 s, Tj = -40...+150 C Dynamic Characteristics VIN to 90% ID : RL = 2,2 , VIN = 0 to 10 V, Vbb = 12 V Turn-off time VIN to 10% ID : Turn-on time s RL = 2,2 , VIN = 10 to 0 V, Vbb = 12 V Slew rate on 70 to 50% Vbb : V/s RL = 2,2 , VIN = 0 to 10 V, Vbb = 12 V Slew rate off 50 to 70% Vbb: RL = 2,2 , VIN = 10 to 0 V, Vbb = 12 V Protection Functions 2) Thermal overload trip temperature Tjt Unclamped single pulse inductive energy EAS C mJ ID = 12 A, Tj = 25 C, Vbb = 32 V 4000 - - ID = 12 A, Tj = 150 C, Vbb = 32 V 900 - - - 1.13 - Inverse Diode VSD Inverse diode forward voltage V IF = 5*12A, tm = 300 S, VIN = 0 V 1Device switched on into existing short circuit (see diagram Determination of I D(lim)). If the device is in on condition and a short circuit occurs, these values might be exceeded for max. 50 s. 2Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. Datasheet 4 Rev. 1.0, 2009-07-20 Smart Low Side Power Switch HITFET BTS 141TC Block Diagramm Terms Inductive and overvoltage output clamp RL V Z D 2 I IN 1 D IN ID VDS Vbb S HITFET S 3 HITFET VIN Short circuit behaviour Input circuit (ESD protection) V IN I D(SCp) IN I D(Lim) ID ESD-ZD I Source t0 ESD zener diodes are not designed for DC current > 2 mA @ VIN >10V. t0: tm t1 t2 Turn on into a short circuit tm: Measurementpoint for ID(lim) t1: Activation of the fast temperature sensor and regulation of the drain current to a level where the junction temperature remains constant. t2: Thermal shutdown caused by the second temperature sensor, achieved by an integrating measurement. Datasheet 5 Rev. 1.0, 2009-07-20 Smart Low Side Power Switch HITFET BTS 141TC Maximum allowable power dissipation On-state resistance Ptot = f(Tc ) RON = f(Tj ); ID=12A; VIN =10V BTS 141 60 160 W RDS(on) Ptot 120 100 40 max. 30 80 typ. 60 20 40 10 20 0 0 20 40 60 80 100 120 C 0 -50 160 -25 0 25 50 75 100 C 150 Tj 150 On-state resistance Typ. input threshold voltage R ON = f(Tj ); ID= 12A; V IN=5V VIN(th) = f(Tj); ID =2,7mA; VDS =12V 70 2.0 V 50 VIN(th) RDS(on) 1.6 max. 40 1.4 1.2 1.0 typ. 30 0.8 0.6 20 0.4 10 0.2 0 -50 -25 0 25 50 75 100 C 0.0 -50 150 Tj Datasheet -25 0 25 50 75 100 C 150 Tj 6 Rev. 1.0, 2009-07-20 Smart Low Side Power Switch HITFET BTS 141TC Typ. transfer characteristics Typ. output characteristic ID = f(VIN); VDS =12V; Tj =25C ID = f(VDS); Tj =25C Parameter: V IN 28 35 A A 10V 6V 5V 20 25 ID ID 4V 16 20 12 15 8 10 4 5 0 0 1 2 3 4 5 V 6 0 0 8 VIN Vin=3V 1 2 3 4 V 6 VDS Transient thermal impedance Z thJC = f (t p) parameter : D = t p/T 10 1 K/W 0 ZthJC 10 D=0.5 0.2 10 -1 0.1 0.05 0.02 10 -2 0.01 0.005 0 10 -3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s 10 2 tP Datasheet 7 Rev. 1.0, 2009-07-20 Smart Low Side Power Switch HITFET BTS 141TC Application examples: Status signal of thermal shutdown by monitoring input current R St IN C V IN D HITFET V bb S V V IN thermal shutdown V = RST *IIN(3) Datasheet 8 Rev. 1.0, 2009-07-20 Smart Low Side Power Switch HITFET BTS 141TC Package Outlines 1 Package Outlines 4.4 10 0.2 1.27 0.1 A 8.5 1) B 0.05 4.7 0.5 2.7 0.3 2.4 0.1 1.3 0.3 7.55 1) 9.25 0.2 (15) 1 0.3 0...0.3 0...0.15 1.05 0.5 0.1 0.75 0.1 8 MAX. 2.54 5.08 0.25 A B M 1) Typical Metal surface min. X = 7.25, Y = 6.9 All metal surfaces tin plated, except area of cut. Figure 1 0.1 B GPT09085 PG-TO263-3-2 To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). You can find all of our packages, sorts of packing and others in our Infineon Internet Page "Products": http://www.infineon.com/products. Datasheet 9 Dimensions in mm Rev. 1.0, 2009-07-20 Smart Low Side Power Switch HITFET BTS 141TC Revision History 2 Version Rev. 1.0 Datasheet Revision History Date Changes 2009-07-20 released initial Datasheet 10 Rev. 1.0, 2009-07-20 Edition 2009-07-20 Published by Infineon Technologies AG 81726 Munich, Germany (c) Infineon Technologies AG 2009. All Rights Reserved. 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