SYMBOLS & CODES EXPLAINED j p 7 e 4 . { i a i ( i . . [A G n LINE TYPE [DEVICE Vp. BVdss (BVgss _| \ass Igss@ ND] COMMON SOURCE/ Rds | MAX. | IN STRUC|Y200 (EO No. No. [DISS @ | | Id Ig |Vgs=0O8 we pi Vgs /Vds gfs Yos Cis FREE |MAX|-TURE | s/a jAD @25C |ld=0 |Vds | Vds>Vp!& mhos. AIR [TEMP T0200/D E w) | (vy | ty) Vv} | tA) | A A Vv MAX ee C Ser. v- Matched Type, also listed in STRUCTURE Section 13, Category 6 A typical afg D ~ Diffused @ Phototransistor, also listed in Pulsed E Epitaxial tooe bonr ae ; % High Frequency (Yes) Ge GermaniumPE 5 (i- Yes PE Planar Epitaxial PL Planar eet tg: . # Junction Type A With infinite heat sink A_y - Y, * Insulated Gate (MOS Type) T Above 28C; For additional is 9 _ Matched pair or dual information, consult manufacturer. + Not at given test conditions A Switching, other uses % Maximum Zw Chopper, Other uses + * Pulsed D Noise figure 8db or below VgglCut off} mi fT = Plastic Package A. Vogt Threshold) Vv H Hometaxial % Typical % Maximum $ Tetrode # Mini A Not given at test conditions % Insulated Gate (MNOS Type} - imimum R [_# = Mini T Rosion) # Vps * A Depletion Mode, Type A $ Depletion-Enhancement Mode, Type B x Enhancement Mode, Type C a A - BYv T- sv bso DSX A pss @ Ves = Qand Vos Vp Ves 790 Minimum Typical Pulsed ON e+ P+ , (Output Shorted) Not given at test conditions Typical Cass Cag0 g-c igs JJunction $Storage AAmbient CCase A Phototransistor Device A Tetrode Device % Composite Type BYngo ! Lo mE al ks esaleain M wa Re aay alg we TYPE No. fT - 40 # g0c * 45C $ 100c # 50 D Free Air Zz 60C y Typical Vatue 75C A- > 100C Symbols indicate temperature at which derating starts. A Q With infinite heat sink Following symbols indicate temp W Power at which derating starts: Output f- 40% (- ec % gor * 45C ~- 70C A Pulsed #- 50% $$ - 100C %_ min * 0-65C A Ambient @ 70-80 C Case # 85-100C J Junction # 110-125C S Storage 130-135C ~ 140-165C 170-200C v Over 200C D - te . $ Minimum # Pulsed or Peak a T At temperature 25C Case D- 1, # Pulsed $ Minimum aE t sraucly indicated Maximum tyt % * Ton t, # ~ ts QD ~ AtVog < Max. Veg (see mfr. spec.) FT - ttt * Tote # Icex ky A - rs * = Ton * Toft 1 cer CEO) CES @ AtTemp. 25C Case Vv Typical Value # Pulsed $ Typical tT AtTemp. > 25C # Rated max. operating frequency f # BV __ or punch-through t <b x a Gain bandwidth product (ft) Q- BV ces * Pulsed A- 1 * Maximum frequency of oscillation g BV BVsoisus) B-1 Q Figure of merit (frequency for CER $ Minimum B unity power gain) op A Minimum Z- Maximum 7 At Temp. 25C Case fon a $ Minimum ~~ "fe * ~ Available to # Pulsed selected range $ ~ Tetrode Typical narrower than # Radiation Resistant Device (Also see top of reverse side of card.)73 ML111B ML132B MT132B 2N3697 2N3113 28412 MEM301 2N3695 $D5012* * $05015* 2N3379 2N3385 K1502 UC140 MT101B RN1030 RN3020R SFF103 2N5505 v 2N5508 2NS511 2N55149 DP1003 v DP1006v Vv DP1009 2N4088 3N96 BFX83 FP4339 MEM101T MM2103 P1027 P1069E ut Vv DISS @ @25C |Id=0 |Vds D.A.T.A. 40 30 75 30 @ Vgs= -60mA 180uA 90m 1.0n m 3.7 5.0 B* 5.0 D* 6m% 30m% m 6.0mA 20nA n 1.5n 50n 50m! 1.5m 5Qm| 100u |5.0n 30m 3.0mA 6.0m 5.0m 50m) 35m 50m|3.8m 5m 50mj600u Igss@ Vgs>V' Vds>Vp|&Vds= -10n 50p -10n 100u 1.0n 3.0p .On n 15n 100p 100p 10p 3.0n 3.0n 10n 100p 100p 4.5 1.7m | 35u% 5.Op# * .1p 1.1pt* * Ip 1.1 pt* 2.0pA 5.0pa 1.0pA 8.0p 6.9pt 4.0pt 4.0pt 3.0 A* 9p 1.0m 6.5 m . 75m : 20p% 10 [3.0m 100u%|600 %| 40p# 10 | 7.0m .12k 16pt 20 |1.0m 1.2kt |5.0p% 20 |300u 2.4kt |5.0p% SYMBOLS AND CODES EXPLAINED IN INTERPRETER IN ORDER OF (1) DISSIPATION IN FREE AIR 4.0m 4.0m 4.0m 2.0m C- /200 |E 0 TURE | s/a AD 175 2008S 200 200J 125J T0200|D E R115b L53b L53b u 7072 u TO18 TO17 TO72 TO72 L53 L54 u22 u22 200S |ID#A 200J |PL 200J |PL 73b> CQew + LINE No. Vv - - #- SYMBOLS & CODES COMMON TO MORE THAN ONE TECH New Type Revised Specifications Non-JEDEC type manufactured outside U'S.A. TYPE No. SYMBOLS & CODES EXPLAINED Switching type, also listed in Section 12 Chopper, also listed in Section 13, Category 10 These types also included elsewhere with other characteristics. See Type No. Cross Index for alternate line number. Radiation Resistant Devices, also listed in Section 13, Category 13. ICAL SECTION wo fa, Gain bandwidth product (f-) Maximum frequency of oscillation Figure of merit (frequency for unity power gain) Minimum Maximum I Charge storage time constant Stored base charge picocoulomb Total switching time Ton = t + ty Typical Value ee Tort = ts + ty Typical Value Ton + Tote =td+ tr + tf + ts LINE No. TYPE No. [2] RISE [DELAY TIME | TIME STRUCTURE (Atl Sections A Alloy Except 6 & 7} AN Annular D Diffused or drift DM - Diffused mesa E Epitaxial EA -~ Epitaxial annular EM Epitaxial mesa F Fused G Grown GA Gallium Arsenide H Hometaxial MA -- Mico alloy MD Micro alloy diffused ME - Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alloy diffused PE Planar epitaxial PL Planar s Surface barrier to Matched pair ~ Switching, other uses Chopper, other uses Noise figure 8db or below Plastic package ~ Overlay * THESE TYPES ALSO INCLUDED ELSEWHERE WITH OTHER CHARACTERISTICS SEE TYPE NO. CROSS INDEX FOR ADDITIONAL PAGE & LINE NO. Pulsed Minimum Maximum Available to selected range narrower than indicated - Yes in millimho (FETs only). Bias values are Vos & 'b . | Cob SAT. xX Tt - "bp rbb PP +him vw 24 NP Cob |N-NPN i A|TEMP: T OWG. No. ormr moo Ge Germanium Si Siticon Tetrode NPN or N Channel PNP or P Channel Field Effect Transistor Radiation Resistant Device (See above also) D With infinite heat sink Following symbols indicate temperature at which derating starts: f - 40c 70 * ~ 45C $- 100C or greater # 50C @ 80C ~ 60C A- Pulsed A ~- Maximum $ ~ Cob - Ron (FETs only) # Pulsed - Coes (FET's only} SISTORS A Ambient Cc Case J Junction Ss Storage DESCRIPTION a 1 Avalanche Mode 10 - 2 Bi-directional 11 - Unmatched Ge Germanium 3 Field Effect Composite (Dual) Si Silicon 4 Hook Collector 12 Cryogenic 5 ~ Complementary 13 Radiation Symmetry (PNP & Resistant Devices NPN) Matched Pair 14 Pressure Sensitive N -~ NPN or N Channel See TECHNICAL TERM DEFINITIONS Section | 6 Matched Pair 15 Transistor chips P PNP or P Channel 7 Phototransistor 16 Darlington (See above also) 8 - Tetrode 17 Microwave 9 Unijunction: NN-type emitter (P-type Base) PP-type emitter (N-type Base)123 X1004 2N1019 28843 AC154/AC 157 FP4340/2N4340 2AD140 2AT128 2BC138 2BC221 2N214MP 2N3515 2N3519 2N3524 2N3943 2N4043 * 2N5505* * 2N5508* * 2N5511* * 2N5514* * 20C6 20C84 288145 2SFT212 273043 2X2N3055t 4JD12X043 124104 12A108 12A904 12G101 12H301 12H901 12J302 125902 12X165 A520 D.A.T.A. IN ORDER OF (1) CATEGORY & (2) TYPE No. DESCRIPTION m m m . 4 leaded TOS or TO46; BVDSS-50V; IDSS-100nA max; gfs-1000u mhos Pc-10W max:;BVCBO-30V; Ic-3.0A max:hFE-15000 Typ/VCE-5.0V:Ic-1.0A. ax. A ; Max. Temp fab-1.0Mc; BVCBO-25V; IC-.O5A max; hFE-70 at IC--O5A Matched pair of AC154 and AC157 max. match-30%;IDSS match-5%;BVGSS-50V_ max;Pc-.30W max. ax. ; } Matched Pair of AD140; hFE1/hFE2-1.25 to 1.0 Matched Pair of AT128; hFE/hFE2-.83 max. ; 75 max. Matched Pair of BC138;hFE 1/2 1.0min-1.25max at iC of 1.0A. Matched Pair of 8C221;hFE 1/2 1.Omin-1.25max at IC of 200mA. -. at : Max. Coll. Diss. 18O0mW;FaB.80mC;Max.Temp.85J;Matched pair 214 -1. OV max. Pt-1.4W both EO-40V BO-5.0V max. 7. max; max. PT-1.4W both sides;VCBO-6GOV max:VCEO-30V max;VEBO-7.0V max. 1, max; max. Pt-1.4W both sides;VCBO-70V max:VCEO-55V max:VEBO-7.0V max. B 1C-50mA;Pt-.7 5W;VBE( 1-2)-3.OmV:hFE 1/2-.90min. - . : - n. BVCBO-45V,IC-10mA;Pt-.50W;VBE(1- .OmV;hFE 1/2-.80min. Pt. 3W,1G(1- : . mv; Su mV; PL.swWw ; : 15mV; mv; Pt. 3W, ; 15mvV; mV; Pt-..2W, ; . 25mV; .95 m * Matched Pair of OC20; hFE1/h -1.2 to 1.0 Matched of OC84;hFE1/2-.83 min. : max; BVCBO-30V; Ic-1.0A max; fae-7.0Mc; hFE-37/te-1.0A -. a BVCBO-30V;Pc-30W at Tc:hFE-40 at FC-2.0A;fab-200kc mv; Max. Thermal Res. 3.0 oC/mW; Matched Pair 2T3033 Pt 117W:hFE1/2 1.6 at VCE 4.0V;IC 400mAft 1.0MHz. > Two 2N2193 T =, - - 1 5mVmax. Pt-250m BO-2.0nA maxhFE-25min;VBE1/2-5.0mV max:ft-6OMc min. n; : PT-.75W both sides;VCBO-50V min:hFE match-40%;VBE match-15mV. : ; mV. Pt-250m BO-2.0nA_max:hFE-25 ;7Vbe 1/Vbe2-5.OmVmax:fT-6O0Mcmin. 1. m PT-.75W both sides; VCBO-35V min. Pt-1.4W Both Sides:VCBO-30V min:ICBO-10nA. Pt-1.4W Both Sides;VCBO-30V min;ICBO-10nA. Pt-1.4W Both Sides:VCBO-40V:ICBO-. 40uA;hFE Match-.80/1.0 Pt-1.4W Both Sides:VCBO-40V-ICBO-.40UA:hFE Match-.80/1.0 at max at PA-300mW; VCEO-55V; hFE-100 min; hFE1/hFE2-.80 to 1.0. VCBO-80V;Ic-50mA max;Pt-1200m iVBE1-VBE2-3mV:hFE-40 min. SYMBOLS AND CODES EXPLAINED IN INTERPRETER 123