SIEMENS NPN Silicon AF Transistors @ High breakdown voltage @ Low collector-emitter saturation voltage @ Complementary types: SMBTA 55 SMBTA 05 SMBTA 06 SMBTA 56 (PNP) | YPS05161 Type Marking Ordering Code Pin Configuration | Package) (tape and reel) 1 2 3 SMBTA 05 siH Q68000-A3430 B E CG | SOT-23 SMBTA 06 siG Q68000-A3428 Maximum Ratings Parameter Symbol Values Unit SMBTA 05 SMBTA 06 Collector-emitter voltage VeEo 60 80 Vv Collector-base voltage Vopo 60 80 Emitter-base voltage Vepo 4 Collector current Ie 500 mA Peak collector current cu 1 A Base current Ie 100 mA Peak base current Tem 200 Total power dissipation, Ts = 79 C Prot 330 mW Junction temperature Tj 150 C Storage temperature range Taig 65... + 150 Thermal Resistance Junction - ambient?) Rina < 285 KAW Junction - soldering point Rinss <215 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mmv/6 cm? Cu. 5.91 Semiconductor Group 1801SIEMENS SMBTA 05 SMBTA 06 Electrical Characteristics at Ta = 25 C, unless otherwise specified. Parameter Symbol Values min. |typ. | max. Unit DC characteristics Collector-emitter breakdown voltage Ic=1mA SMBTA 05 SMBTA 06 ViBR)CEO Collector-base breakdown voltage Ie = 100 pA SMBTA 05 SMBTA 06 Viaryceo Emitter-base breakdown voltage Te =10 pA Vier)eBo Collector-base cutoff current Ves = 60 V SMBTA 05 Veg = 80 V SMBTA 06 Vea = 60 V, Ta = 150C SMBTA 05 Vea = 80 V, Ta = 150C SMBTA 06 Teso nA nA pA Collector cutoff current Vce = 60 V Tce nA DC current gain) Ic = 10 MA, Vee=1V Ie = 100 mA, Vce = 1V Are 100 100 Collector-emitter saturation voltage?) Ic = 100 mA, Je = 10mMA Veesat Base-emitter saturation voltage) Ic = 100 mA, Vce=1V Vee AC characteristics Transition frequency Ic = 20 mA, Vee = V, f= 20 MHz 100 - MHz Output capacitance Vce = 10 V, f= 1 MHz Cobo 12 - pF 1 Pulse test conditions: t< 300 ps, D = 2 %. Semiconductor GroupSIEMENS SMBTA 05 SMBTA 06 Total power dissipation Pi = f (Ts"; Ts) Collector current Ic = f (Vee) * Package mounted on epoxy Vee=1V 400 PT 05/06 EHPOOB14 103 SMBTA 05/06 EHPO0815 mA Prot mW fe \ KN \ 2 300 10 iN | \ 5 \ Nie 200 10! AN 5 100 N 10 5 3 * 50 100 C 150 0 0.5 100 CAS Wk Vag Permissible pulse load Pict max/Prt oc = f (tp) 10 SwaTA 05/06 Prot mox 5 Prot oe 10? BEHNis DOOD ae AV=6 CTC He To oh CTT TT St EAT A 1078 o> 10* 1073 1077 = 10 ty Semiconductor Group Transition frequency ft = f (Ic) Vee = BV 3 SMBTA EHP00817 10 MHz 5 10? to! 5 107 ma 10 |, 10 10! 1803SIEMENS Base-emitter saturation voltage Ic = f (Veesa), re = 10 103 SMBTA 05/06 EHPO081S mA Ie 10? 5 10! 10 107} 0 0.5 1.0 V1.5 Versat Collector cutoff current /ceo = f (Ta) Vea = Vcemax SMBTA 05/06 4 EHPOOB20 10 nA 105 logo 5 10? 5 10! 107! 0 50 100 =6C 150 ~ 7 A Semiconducter Group SMBTA 05 SMBTA 06 Coilector-emitter saturation voltage Ic =f (Veesat), hre = 10 103 SMBTA 05/06 EHPOO819 ig mA 10? 5 10! 10 0.0 0.10.2 03040506 V 08 ~ Votsat DC current gain fre = f (Jc) Vee=1V 3 SMBTA 05/06 EHPO0821 Nee 10? 10! 1 1 0 1 2 3 10 10 10 107 mA 10 Ie 1804