Product Datasheet Search Results:

XVN2222LL.pdf2 Pages, 19 KB, Original
XVN2222LL
Calogic
FET Transistor, N-Channel Enhancement-Mode MOS Transistors

Product Details Search Results:

Americanmicrosemi.com/VN2222LL
{"Status":"Active"}...
719 Bytes - 10:56:48, 20 November 2024
Atmel.com/VN2222LL
{"Terminal Form":"WIRE","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Additional Feature":"LOW THRESHOLD","Status":"Transferred","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2300 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","JESD-30 Code":"O-PBCY-W3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mount":"NO",...
1505 Bytes - 10:56:48, 20 November 2024
Atmel.com/VN2222LL-18
{"Terminal Form":"WIRE","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Additional Feature":"LOW THRESHOLD","Status":"Transferred","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2300 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","JESD-30 Code":"O-PBCY-W3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mount":"NO",...
1469 Bytes - 10:56:48, 20 November 2024
Atmel.com/VN2222LLTA
{"Terminal Form":"WIRE","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Additional Feature":"LOW THRESHOLD","Status":"Transferred","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2300 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","JESD-30 Code":"O-PBCY-W3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mount":"NO",...
1461 Bytes - 10:56:48, 20 November 2024
Atmel.com/VN2222LLTR
{"Terminal Form":"WIRE","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Additional Feature":"LOW THRESHOLD","Status":"Transferred","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2300 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","JESD-30 Code":"O-PBCY-W3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mount":"NO",...
1464 Bytes - 10:56:48, 20 November 2024
Calogic.net/VN2222LL
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Active","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2300 A","Drain Current-Max (Abs) (ID)":"0.0990 A","Sub Category":"FET General Purpose Power","Peak Reflow Temperature (Cel)":"NOT SPECIFIED","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","...
1808 Bytes - 10:56:48, 20 November 2024
Calogic.net/VN2222LLTA
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Active","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2300 A","Feedback Cap-Max (Crss)":"5 pF","Peak Reflow Temperature (Cel)":"NOT SPECIFIED","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","Moisture Sensitivity Level":"NOT SPECIFIED",...
1657 Bytes - 10:56:48, 20 November 2024
Calogic.net/VN2222LLTR1
{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2300 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mo...
1463 Bytes - 10:56:48, 20 November 2024
Calogic.net/VN2222LLTR2
{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2300 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mo...
1465 Bytes - 10:56:48, 20 November 2024
Calogic.net/VN2222LLTR3
{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2300 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mo...
1461 Bytes - 10:56:48, 20 November 2024
Calogic.net/VN2222LLTR4
{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2300 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mo...
1463 Bytes - 10:56:48, 20 November 2024
Diodes.com/VN2222LL
{"Terminal Form":"WIRE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Transferred","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1500 A","Drain Current-Max (Abs) (ID)":"0.0990 A","Sub Category":"FET General Purpose Power","Configuration":"SINGLE","Drain-source On Resistance-Max":"7.5 ohm","Feedback Cap-Max (Crss)":"5 pF","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE S...
1560 Bytes - 10:56:48, 20 November 2024

Documentation and Support

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