Product Datasheet Search Results:

XVN0610LL.pdf2 Pages, 19 KB, Original
XVN0610LL
Calogic
FET Transistor, N-Channel Enhancement-Mode MOS Transistors

Product Details Search Results:

Americanmicrosemi.com/VN0610LL
{"Status":"Active"}...
717 Bytes - 01:20:15, 28 November 2024
Atmel.com/VN0610LL
{"Status":"Transferred","Surface Mount":"NO","Package Body Material":"PLASTIC/EPOXY","Configuration":"SINGLE","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT MODE","Polarity/Channel Type":"N-CHANNEL","Number of Terminals":"3","Package Style":"CYLINDRICAL","Drain Current-Max (ID)":"1.3 A","Qualification Status":"COMMERCIAL","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Package Shape":"ROUND","Number of Elements":"1","Drain-source On Re...
1318 Bytes - 01:20:15, 28 November 2024
Atmel.com/VN0610LL-18
{"Terminal Form":"WIRE","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Additional Feature":"LOW THRESHOLD","Status":"Transferred","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2800 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5 ohm","JESD-30 Code":"O-PBCY-W3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mount":"NO","J...
1469 Bytes - 01:20:15, 28 November 2024
Atmel.com/VN0610LLTA
{"Terminal Form":"WIRE","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Additional Feature":"LOW THRESHOLD","Status":"Transferred","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2800 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5 ohm","JESD-30 Code":"O-PBCY-W3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mount":"NO","J...
1462 Bytes - 01:20:15, 28 November 2024
Atmel.com/VN0610LLTR
{"Terminal Form":"WIRE","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Additional Feature":"LOW THRESHOLD","Status":"Transferred","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2800 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5 ohm","JESD-30 Code":"O-PBCY-W3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mount":"NO","J...
1463 Bytes - 01:20:15, 28 November 2024
Calogic.net/VN0610LL
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2800 A","Drain Current-Max (Abs) (ID)":"0.1900 A","Sub Category":"FET General Purpose Power","Peak Reflow Temperature (Cel)":"NOT SPECIFIED","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5 oh...
1812 Bytes - 01:20:15, 28 November 2024
Calogic.net/VN0610LLTA
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2800 A","Feedback Cap-Max (Crss)":"5 pF","Peak Reflow Temperature (Cel)":"NOT SPECIFIED","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5 ohm","Moisture Sensitivity Level":"NOT SPECIFI...
1661 Bytes - 01:20:15, 28 November 2024
Calogic.net/VN0610LLTR1
{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2800 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Moun...
1460 Bytes - 01:20:15, 28 November 2024
Calogic.net/VN0610LLTR2
{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2800 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Moun...
1461 Bytes - 01:20:15, 28 November 2024
Calogic.net/VN0610LLTR3
{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2800 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Moun...
1460 Bytes - 01:20:15, 28 November 2024
Calogic.net/VN0610LLTR4
{"Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2800 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"60 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Moun...
1461 Bytes - 01:20:15, 28 November 2024
Exar.com/VN0610LL
{"Status":"Discontinued","Operating Mode":"ENHANCEMENT MODE","Polarity/Channel Type":"N-CHANNEL","Power Dissipation-Max (Abs)":"0.4000 W","Operating Temperature-Max":"150 Cel","Drain Current-Max (Abs) (ID)":"0.1900 A","Sub Category":"FET General Purpose Power","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Configuration":"Single","Surface Mount":"NO"}...
1048 Bytes - 01:20:15, 28 November 2024

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