Did you mean: CP-MB-2-T18
Product Datasheet Search Results:
- AAT2603INJ-2-T1
- Advanced Analog Technology, Inc.
- Total Power Solution for Portable Applications
- AAT2861IMK-2-T1
- Analogictech
- Backlight/Flash LED Driver and Multiple LDO Lighting Management Unit, TQFN34-24
- AAT3103IJQ-2-T1
- Advanced Analog Technology, Inc.
- 3-Channel Charge-Pump LED Driver
- AAT3104IJQ-2-T1
- Analogictech
- Low Cost 1x/2x 4 Channel Charge Pump WLED Driver, S<sup>2</sup>Cwire Interface, 32-Step Current Control, SC70JW-10
- AAT3195IJQ-2-T1
- Analogictech
- 4-Channel Charge-Pump LED Driver, S<sup>2</sup>Cwire Interface, 20mA, 32-step Current Level (Inverting), SC70JW-10
- AAT3221IGV-2.8-2-T1
- Analogictech
- 150mA NanoPower LDO Linear Regulator
- AAT3221IGV-3.3-2-T1
- Analogictech
- MicroPower Microprocessor Reset Circuit with Delay
- AAT3663IWO-4.2-2-T1
- Analogictech
- 1A Linear Li-Ion Battery Charger for Single and Dual Cell Applications
- AAT3663IWO-8.4-2-T1
- Analogictech
- 1A Linear Li-Ion Battery Charger for Single and Dual Cell Applications
- AAT3672IWO-4.2-2-T1
- Analogictech
- 1.6A Dynamic Battery Charger and Power Management IC, TDFN33-14
- AAT3681AIJS-4.2-2-T1
- Analogictech
- USB Port or AC Adapter Lithium-Ion Battery Charger
- AAT3683IOQ-4.2-2-T1
- Analogictech
- 1A Linear Li-Ion Battery Charger in 2.2x2.2mm STDFN
Product Details Search Results:
Chia_shin_knobs/CP-MB-2-T18
895 Bytes - 08:25:59, 01 December 2024
Harbourind.com/M27500-16-TG-2-T14
1200 Bytes - 08:25:59, 01 December 2024
Harbourind.com/M27500-22-TG-2-T14
891 Bytes - 08:25:59, 01 December 2024
Harbourind.com/M27500-24-TG-2-T14
892 Bytes - 08:25:59, 01 December 2024
Mitsubishichips.com/FS10AS-2-T1
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"40 A","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"10 A","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RE...
1455 Bytes - 08:25:59, 01 December 2024
Mitsubishichips.com/FS10ASJ-2-T1
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"40 A","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"10 A","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RE...
1464 Bytes - 08:25:59, 01 December 2024
Mitsubishichips.com/FS30AS-2-T1
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"120 A","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"30 A","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"R...
1456 Bytes - 08:25:59, 01 December 2024
Mitsubishichips.com/FS30ASJ-2-T1
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"120 A","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"30 A","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"R...
1466 Bytes - 08:25:59, 01 December 2024
Mitsubishichips.com/FS30VS-2-T1
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"30 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"120 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor Application":"SWITCHING","Surf...
1510 Bytes - 08:25:59, 01 December 2024
Mitsubishichips.com/FS30VSJ-2-T1
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"30 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0910 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"120 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor Application":"SWITCHING","Surf...
1516 Bytes - 08:25:59, 01 December 2024
Mitsubishichips.com/FS50VS-2-T1
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"50 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0550 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"200 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor Application":"SWITCHING","Surf...
1510 Bytes - 08:25:59, 01 December 2024
Mitsubishichips.com/FS50VSJ-2-T1
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"50 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0520 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"200 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor Application":"SWITCHING","Surf...
1516 Bytes - 08:25:59, 01 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
VMPAL-AP-20-QS8-1-T1.pdf | 0.23 | 1 | Request | |
VMPAL-AP-20-QS5_16_-2.pdf | 10.51 | 1 | Request | |
VMPAL-AP-20-T35.pdf | 10.51 | 1 | Request | |
VMPAL-AP-20-QS10-1-T1.pdf | 0.23 | 1 | Request | |
VMPAL-AP-20-QS3_8_-1-T1.pdf | 10.51 | 1 | Request | |
VMPAL-AP-20-QS10-2.pdf | 10.51 | 1 | Request | |
VMPAL-AP-20-QS8-1.pdf | 10.51 | 1 | Request | |
VMPAL-AP-20-QS3_8_-2-T1.pdf | 10.51 | 1 | Request | |
VMPAL-AP-20-T35-RV.pdf | 0.13 | 1 | Request | |
VMPAL-AP-20-QS5_16_-1.pdf | 10.51 | 1 | Request | |
VMPAL-AP-20-QS3_8_-1.pdf | 10.51 | 1 | Request | |
VMPAL-AP-20-T135-RV.pdf | 0.13 | 1 | Request |