Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"Y3-Li","Family":"FETs - Modules","Vgs(th) (Max) @ Id":"4V @ 10mA","Series":"-","Standard Package":"2","Supplier Device Package":"Y3-Li","Datasheets":"VMM1000-01P","Rds On (Max) @ Id, Vgs":"1.2 Ohm @ 800A, 10V","FET Type":"2 N-Channel (Dual)","Packaging":"Bulk","Power - Max":"-","Package / Case":"Y3-Li","Mounting Type":"Chassis Mount","Drain to Source Voltage (Vdss)":"100V","Current - Continuous Drain (Id) @ 25\u00b0C":"...

{"Terminal Form":"UNSPECIFIED","Qualification Status":"COMMERCIAL","Package Shape":"RECTANGULAR","Status":"Discontinued","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1000 A","Configuration":"SERIES CONNECTED, CENTER TAP, 2 ELEMENTS","Drain-source On Resistance-Max":"0.0012 ohm","DS Breakdown Voltage-Min":"100 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mount":"NO","Case Connection":"ISOLATED","Mfr Pa...