Product Datasheet Search Results:

TSM3443CX6RF.pdf6 Pages, 209 KB, Original
TSM3443CX6RF
Taiwan Semiconductor Co., Ltd.
4.7 A, 20 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET
TSM3443CX6RFG.pdf6 Pages, 209 KB, Original
TSM3443CX6RFG
Taiwan Semiconductor Co., Ltd.
4.7 A, 20 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Taiwansemi.com/TSM3443CX6RF
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.7 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"20 V","Tran...
1495 Bytes - 01:37:14, 08 January 2025
Taiwansemi.com/TSM3443CX6RFG
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.7 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"20 V","Tran...
1517 Bytes - 01:37:14, 08 January 2025

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