Product Datasheet Search Results:
- TPH4R003NL,L1Q
- Toshiba
- MOSFET Power moSFET N-ch single VDSS30V
Product Details Search Results:
Toshiba.co.jp/TPH4R003NL,L1Q
{"Mounting Style":"SMD/SMT","Vds - Drain-Source Breakdown Voltage":"30 V","Transistor Polarity":"N-Channel","Qg - Gate Charge":"14.8 nC","Channel Mode":"Enhancement","Vgs - Gate-Source Breakdown Voltage":"20 V","Series":"U-MOSVIII","Brand":"Toshiba","Id - Continuous Drain Current":"68 A","Vgs th - Gate-Source Threshold Voltage":"2.3 V","Pd - Power Dissipation":"36 W","Packaging":"Reel","Product Category":"MOSFET","Fall Time":"3.5 ns","Rds On - Drain-Source Resistance":"6.2 mOhms","Package / Case":"SOP-8","T...
1670 Bytes - 18:27:59, 08 January 2025
Toshiba.semicon-storage.com/TPH4R003NL,L1Q
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.3V @ 200\u00b5A","Featured Product":"U-MOS\u2167-H MOSFETs","Package / Case":"8-PowerVDFN","Current - Continuous Drain (Id) @ 25\u00b0C":"40A (Tc)","Gate Charge (Qg) @ Vgs":"14.8nC @ 10V","Product Photos":"TPHR8504PL,L1Q","Rds On (Max) @ Id, Vgs":"4 mOhm @ 20A, 10V","Datasheets":"TPH4R003NL -","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"5,000","Drain to Source Voltage (Vdss)":"30V","Online Catal...
1864 Bytes - 18:27:59, 08 January 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
300TPHSR431W.pdf | 0.04 | 1 | Request | |
400TPHSR631S9.pdf | 0.04 | 1 | Request | |
900TPHSR631MW.pdf | 0.04 | 1 | Request | |
300TPHSR431.pdf | 0.04 | 1 | Request | |
400TPHSR631M.pdf | 0.04 | 1 | Request | |
350TPHSR631S9.pdf | 0.04 | 1 | Request | |
450TPHSR631M.pdf | 0.04 | 1 | Request | |
TPH_250.pdf | 0.03 | 1 | Request | |
TPH_500.pdf | 0.04 | 1 | Request | |
100TPHSR231M.pdf | 0.04 | 1 | Request | |
500TPHSR431MW.pdf | 0.04 | 1 | Request | |
250TPHSR431MW.pdf | 0.04 | 1 | Request |