Product Datasheet Search Results:
- TPCA8A05-H
- Toshiba
- TPCA8A05-H
Product Details Search Results:
Toshiba.co.jp/TPCA8A05-H
{"Terminal Form":"FLAT","Avalanche Energy Rating (Eas)":"52 mJ","Package Shape":"SQUARE","Status":"EOL/LIFEBUY","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"20 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0172 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"30 V","Transist...
1522 Bytes - 09:33:47, 03 January 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
TPCA8A05-H.pdf | 0.20 | 1 | Request |