Datasheet.Directory

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Avalanche Energy Rating (Eas)":"16 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0240 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"45 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown ...

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"15(A)","Mounting":"Surface Mount","Operating Temp Range":"-55C to 150C","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Power Dissipation":"2.8(W)","Rad Hardened":"No","Package Type":"SOP ADVANCE","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"1"}...

{"Factory Pack Quantity":"3000","Vds - Drain-Source Breakdown Voltage":"60 V","Transistor Polarity":"N-Channel","Brand":"Toshiba","Id - Continuous Drain Current":"15 A","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"24 mOhms","Package / Case":"SOP-8","RoHS":"Details","Manufacturer":"Toshiba"}...