Datasheet.Directory

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"ROHS COMPLIANT, THIN, 2-6J1B, 8 PIN","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"13 A","Transistor Application":"SWITCHING","Number of Elements":"1","Feedback Cap-Max (Crss)":"210 pF","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PUR...

{"Factory Pack Quantity":"3000","Vds - Drain-Source Breakdown Voltage":"80 V","Transistor Polarity":"N-Channel","Brand":"Toshiba","Id - Continuous Drain Current":"13 A","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"10.1 mOhms","Package / Case":"SOIC-8","RoHS":"Details","Manufacturer":"Toshiba"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"80 V","Typical Rise Time":"3.4 ns","Description":"Value","Maximum Continuous Drain Current":"13 A","Package":"6SOP","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"9.7@10V mOhm","Manufacturer":"Toshiba","Typical Fall Time":"6.7 ns"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"8-SOIC","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.3V @ 1mA","Input Capacitance (Ciss) @ Vds":"7540pF @ 10V","Series":"-","Standard Package":"3,000","Supplier Device Package":"8-SOP (5.5x6.0)","Catalog Drawings":"TCP8 Series Top TCP8 Series End","Datasheets":"TPC8051-H - Mosfets Prod Guide","Rds On (Max) @ Id, Vgs":"9.7 mOhm @ 6.5A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Po...