Datasheet.Directory

{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"147 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"24 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"525 V","Tr...

{"Factory Pack Quantity":"50","Vds - Drain-Source Breakdown Voltage":"525 V","Transistor Polarity":"N-Channel","Brand":"Toshiba","Id - Continuous Drain Current":"6 A","Pd - Power Dissipation":"35 W","Mounting Style":"Through Hole","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"1.3 Ohms","Package / Case":"TO-220-3","RoHS":"Details","Manufacturer":"Toshiba"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-220-3 Full Pack","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4.4V @ 1mA","Input Capacitance (Ciss) @ Vds":"600pF @ 25V","Series":"-","Standard Package":"50","Supplier Device Package":"TO-220SIS","Datasheets":"TK6A53D -","Rds On (Max) @ Id, Vgs":"1.3 Ohm @ 3A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"35W","Package / Case":"TO-220-3 Full Pack","Mounting Type":"Through Hole","...