Product Datasheet Search Results:

SUB85N10-10.pdf8 Pages, 130 KB, Original
SUB85N10-10
Vishay / Siliconix
MOSFET 100V 85A 250W
SUB85N10-10 SPICE DEVICE MODEL.pdf3 Pages, 178 KB, Original
SUB85N10-10 SPICE DEVICE MODEL
Vishay
N-Channel 100-V (D-S) 175°C MOSFET
SUB85N10-10T4.pdf6 Pages, 103 KB, Original
SUB85N10-10T4
Vishay Presicion Group
85 A, 100 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

Product Details Search Results:

Vishay.com/SUB85N10-10
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"280 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"85 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0105 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"240 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","...
1502 Bytes - 13:19:48, 09 January 2025
Vishay.com/SUB85N10-10-E3
960 Bytes - 13:19:48, 09 January 2025
Vishay.com/SUB85N10-10T4
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"280 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"85 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0105 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"240 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Bre...
1508 Bytes - 13:19:48, 09 January 2025

Documentation and Support

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File NameFile Size (MB)DocumentMOQSupport
C85N10-10.pdf11.811Request
CD85N10-100-B.pdf11.811Request
CD85N10-100-A.pdf11.811Request
CD85N10-10-A.pdf11.811Request
CD85N10-10-B.pdf11.811Request
C85N10-100.pdf11.811Request