Datasheet.Directory

{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"20 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.1 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"16 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"250 V","Tra...

{"C(iss) Max. (F)":"700p","Absolute Max. Power Diss. (W)":"50","g(fs) Max, (S) Trans. conduct,":"2.5","I(D) Abs. Max.(A) Drain Curr.":"2.5","@V(GS) (V) (Test Condition)":"10","r(DS)on Max. (Ohms)":"1.1","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"16","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"1.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"2.0","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"4.0","V(GS)th Min. (V)":"2.0","Package":"TO-252","Military":"N",...