Product Datasheet Search Results:

STD4N25-1.pdf10 Pages, 204 KB, Original
STD4N25-1
Stmicroelectronics, Inc.
4 A, 250 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA

Product Details Search Results:

St.com/STD4N25-1
{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"20 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.1 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"16 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"250 V","Tra...
1449 Bytes - 02:48:15, 25 January 2025

Documentation and Support

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NCDGFN25-1500.pdf9.761Request
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CDG1WLN25-150Z.pdf7.481Request
CBG1FN25-150-HL.pdf7.481Request
CDBX2N25-150.pdf1.491Request
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CDG1BN25-125Z-M9PL.pdf7.481Request
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CD85N25-100-B.pdf11.811Request