Product Datasheet Search Results:

STD4N25-1.pdf10 Pages, 204 KB, Original
STD4N25-1
Stmicroelectronics, Inc.
4 A, 250 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA

Product Details Search Results:

St.com/STD4N25-1
{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"20 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.1 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"16 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"250 V","Tra...
1449 Bytes - 08:26:05, 01 December 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
CDNGDN25-125-D.pdf2.181Request
CD85KN25-10-B.pdf11.811Request
CDG1WLN25-150Z.pdf7.481Request
C85N25-125.pdf11.811Request
CD85N25-100S-B.pdf11.811Request
NCDGFN25-1400.pdf9.761Request
CDG1KRN25-100Z.pdf7.481Request
NCDGLN25-1500.pdf9.761Request
C85KN25-100.pdf11.811Request
CDG1KWBN25-125Z.pdf7.481Request
NCDGLN25-1600-M9BZ.pdf9.761Request
NCDGKLN25-1000.pdf9.761Request