Product Datasheet Search Results:
63 Pages, 1628 KB, Original- SSM6N7002BFE,LM
- Toshiba Semiconductor And Storage Omron Electronics Inc-emc Div Microchip Technology On Semiconductor Hirose Electric Co Ltd Rohm Semiconductor
- MOSFET 2N-CH 60V 0.2A ES6 CONN FPC 30POS 0.50MM R/A IC OPAMP GP 1MHZ RRO SC70-5 MOSFET 2P-CH 20V 0.88A SOT-363 CONN FFC BOTTOM 4POS 0.50MM R/A DIODE SCHOTTKY 20V 500MA 1608
5 Pages, 197 KB, Original- SSM6N7002BFE,LM
- Toshiba
- Trans MOSFET N-CH Si 60V 0.2A 6-Pin ES T/R
5 Pages, 197 KB, Original- SSM6N7002BFE,LM(T
- Toshiba
- Trans MOSFET N-CH Si 60V 0.2A 6-Pin ES T/R
Product Details Search Results:
Null/SSM6N7002BFE,LM
1565 Bytes - 12:25:17, 01 December 2024
Toshiba.co.jp/SSM6N7002BFE,LM
{"Mounting Style":"SMD/SMT","Vds - Drain-Source Breakdown Voltage":"60 V","Transistor Polarity":"N-Channel","Brand":"Toshiba","Id - Continuous Drain Current":"200 mA","Pd - Power Dissipation":"150 mW","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"2.1 Ohms","Package / Case":"SOT-23-6","Vgs - Gate-Source Breakdown Voltage":"10 V","RoHS":"Details","Manufacturer":"Toshiba"}...
1490 Bytes - 12:25:17, 01 December 2024
Toshiba.co.jp/SSM6N7002BFE,LM(T
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"0.15(W)","Continuous Drain Current":"0.2(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"ES","Operating Temp Range":"-55C to 150C","Type":"Small Signal","Pin Count":"6","Number of Elements":"2"}...
1508 Bytes - 12:25:17, 01 December 2024
Documentation and Support
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