Datasheet.Directory

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.4 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0800 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"20 V","Tr...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0560 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"20 V","Tran...

{"Factory Pack Quantity":"3000","Vds - Drain-Source Breakdown Voltage":"20 V","Transistor Polarity":"N-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Forward Transconductance - Min":"10 S / 6 S","Brand":"Toshiba","Id - Continuous Drain Current":"3 A","Mounting Style":"SMD/SMT","Pd - Power Dissipation":"800 mW","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"70 mOhms","Package / Case":"UFM-3","Vgs - Gate-Source Breakdown Voltage":"12 V","Con...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.2 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5300 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"20 V","Tr...

{"Factory Pack Quantity":"3000","Product Category":"MOSFET","Brand":"Toshiba","Packaging":"Reel","RoHS":"Details","Manufacturer":"Toshiba"}...

{"Factory Pack Quantity":"3000","Vds - Drain-Source Breakdown Voltage":"20 V","Transistor Polarity":"N-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Forward Transconductance - Min":"1.16 S / 0.58 S","Brand":"Toshiba","Id - Continuous Drain Current":"1.2 A","Mounting Style":"SMD/SMT","Pd - Power Dissipation":"800 mW","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"390 mOhms","Package / Case":"SOT-323-3","Vgs - Gate-Source Breakdown Voltage"...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate, 4V Drive","Product Photos":"UFM-SSM3J","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.3V @ 100\u00b5A","Input Capacitance (Ciss) @ Vds":"36pF @ 10V","Series":"-","Standard Package":"1","Supplier Device Package":"UFM","Catalog Drawings":"UFM Top UFM Side","Datasheets":"SSM3K106TU - Mosfets Prod Guide","Rds On (Max) @ Id, Vgs":"310 mOhm @ 600mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power ...