Datasheet.Directory

{"Terminal Finish":"NOT SPECIFIED","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Terminal Form":"WIRE","Diode Cap Tolerance":"10 %","Quality Factor-Min":"1000","Package Shape":"ROUND","Breakdown Voltage-Min":"30 V","Status":"ACTIVE","Package Body Material":"GLASS","Variable Capacitance Diode Classification":"ABRUPT","Diode Capacitance-Nom (Cd)":"8.2 pF","Configuration":"SINGLE","Power Dissipation Limit-Max":"0.2500 W","Diode Element Material":"SILICON","Case Connection":"ISOLATED","Mfr Pac...

{"C1/C2 Min. Capacitance Ratio":"2.9","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"1.0k","Package":"DO-7var","P(D) Max.(W) Power Dissipation":"250m","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"8.2p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4","@V(Q min)(V) (Test Condition)":"4"}...

{"C1/C2 Min. Capacitance Ratio":"2.9","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"1.0k","Package":"Chip","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"8.2p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4","@V(Q min)(V) (Test Condition)":"4"}...