Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"5.5V @ 500\u00b5A","Input Capacitance (Ciss) @ Vds":"1460pF @ 25V","Series":"CoolMOS\u2122","Standard Package":"1","Supplier Device Package":"PG-TO263-3","Datasheets":"SPB11N60S5","Rds On (Max) @ Id, Vgs":"380 mOhm @ 7A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max":"125W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads ...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"11(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"600(V)","Pin Count":"2 +Tab","Packaging":"Tape and Reel","Power Dissipation":"125(W)","Operating Temp Range":"-55C to 150C","Package Type":"D2PAK","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"0.38(ohm)","Number of Elements":"1"}...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"340 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"22 A","Channel Type":"N-CHANNEL","China R...