Datasheet.Directory

{"@V(R) (V) (Test Condition)":"5","V(R) Max.(V) Reverse Voltage":"20","Semiconductor Material":"InGaAs","Photosensitive Area (mm2)":"75u","@Wavelength(m)(Test Condition)":"1.3u","Package":"TO-18var","Re Min.(A\/W) Responsivity":"750m","C(T) Max. (F) Capacitance":"1.2p","t(resp) Max.(s) Response Time":".5n","Ioff Max.(A) Off-state Current":"10n"}...

{"@V(R) (V) (Test Condition)":"5","V(R) Max.(V) Reverse Voltage":"20","Semiconductor Material":"InGaAs","Photosensitive Area (mm2)":"75u","@Wavelength(m)(Test Condition)":"1.3u","Package":"TO-18var","Re Min.(A\/W) Responsivity":"750m","C(T) Max. (F) Capacitance":"1.0p","t(resp) Max.(s) Response Time":"10n","Ioff Max.(A) Off-state Current":"10n"}...

{"@V(R) (V) (Test Condition)":"5","V(R) Max.(V) Reverse Voltage":"20","Semiconductor Material":"InGaAs","Photosensitive Area (mm2)":"75u","@Wavelength(m)(Test Condition)":"1.3u","Package":"TO-18var","Re Min.(A\/W) Responsivity":"750m","C(T) Max. (F) Capacitance":"1.2p","t(resp) Max.(s) Response Time":".5n","Ioff Max.(A) Off-state Current":"5n"}...

{"@V(R) (V) (Test Condition)":"5","V(R) Max.(V) Reverse Voltage":"20","Semiconductor Material":"InGaAs","Photosensitive Area (mm2)":"75u","@Wavelength(m)(Test Condition)":"1.3u","Package":"FOM-FC","Re Min.(A\/W) Responsivity":"700m","C(T) Max. (F) Capacitance":"1.2p","t(resp) Max.(s) Response Time":".5n","Ioff Max.(A) Off-state Current":"10n"}...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"TIN","Mfr Package Description":"TO-39, 4 PIN","Operating Temperature-Min":"-40 Cel","Light Current-Nom":"24 mA","Pk Sensitivity Wavelength-Nom":"900 nm","Operating Temperature-Max":"125 Cel","Infrared Range":"Yes","Number of Functions":"1","Optoelectronic Device Type":"PHOTO DIODE","China RoHS Compliant":"Yes","Dark Current-Max":"100 nA","EU RoHS Compliant":"Yes","Reverse Breakdown Voltage-Min":"10 V","Shape":"ROUND","Configuration":"COMMON CATHODE, 2 ...