Datasheet.Directory

{"Absolute Max. Power Diss. (W)":"360m","g(fs) Max, (S) Trans. conduct,":"12","@V(GS) (V) (Test Condition)":"5.0","r(DS)on Max. (Ohms)":"70","@V(DS) (V) (Test Condition)":"10","I(GSS) Max. (A)":"10u","V(BR)GSS (V)":"25","@I(D) (A) (Test Condition)":"20m","V(GS)th Max. (V)":"2.0","@(VDS) (V) (Test Condition)":"15","V(GS)th Min. (V)":".1","Package":"Chip","Military":"N","td(on) Max (s) On time delay":"1.0n","t(r) Max. (s) Rise time":"1.0n","V(BR)DSS (V)":"20","g(fs) Min. (S) Trans. conduct.":"10","I(D) Abs. D...

{"Absolute Max. Power Diss. (W)":"360m","g(fs) Max, (S) Trans. conduct,":"12","@V(GS) (V) (Test Condition)":"5.0","r(DS)on Max. (Ohms)":"70","@V(DS) (V) (Test Condition)":"10","I(GSS) Max. (A)":"10u","V(BR)GSS (V)":"25","@I(D) (A) (Test Condition)":"20m","V(GS)th Max. (V)":"2.0","@(VDS) (V) (Test Condition)":"15","V(GS)th Min. (V)":".1","Package":"SOT-143","Military":"N","td(on) Max (s) On time delay":"1.0n","t(r) Max. (s) Rise time":"1.0n","V(BR)DSS (V)":"20","g(fs) Min. (S) Trans. conduct.":"10","I(D) Abs...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3600 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"70 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"20 V",...

{"Polarity":"N","Gate-Source Voltage (Max)":"30(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.05(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"20(V)","Power Dissipation":"0.36(W)","Operating Temp Range":"-55C to 125C","Package Type":"SOT-143","Type":"Small Signal","Pin Count":"4","Number of Elements":"1"}...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3600 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"70 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"20 V",...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0500 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"75 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDU...