Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"8-PowerTDFN","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 35\u00b5A","Input Capacitance (Ciss) @ Vds":"2670pF @ 15V","Series":"OptiMOS\u2122","Standard Package":"1","Supplier Device Package":"PG-TDSON-8 (5.15x6.15)","Datasheets":"BSC059N03S G","Rds On (Max) @ Id, Vgs":"5.5 mOhm @ 50A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max":"48W","Package / Case":"8-Powe...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 35\u00b5A","Series":"OptiMOS\u2122","Package / Case":"8-PowerVDFN","Supplier Device Package":"P-TDSON-8 (5.15x6.15)","Rds On (Max) @ Id, Vgs":"5.5 mOhm @ 50A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"48W","Standard Package":"5,000","Input Capacitance (Ciss) @ Vds":"2670pF @ 15V","Drain to Source...

{"Polarity":"N","Gate-Source Voltage (Max)":"20(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"17(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"40(V)","Packaging":"Tape and Reel","Power Dissipation":"3(W)","Operating Temp Range":"-55C to 175C","Package Type":"TDSON EP","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2V @ 23\u00b5A","Package / Case":"8-PowerTDFN","Current - Continuous Drain (Id) @ 25\u00b0C":"16A (Ta), 73A (Tc)","Gate Charge (Qg) @ Vgs":"40nC @ 10V","Rds On (Max) @ Id, Vgs":"5.9 mOhm @ 50A, 10V","Product Photos":"8-PowerTDFN","PCN Other":"Multiple Changes 09/Jul/2014","Datasheets":"BSC059N04LS G","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"1","Drain to Source Voltage (Vdss)":"40V","Onl...

{"Terminal Finish":"MATTE TIN","Terminal Form":"FLAT","Avalanche Energy Rating (Eas)":"25 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"16 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0059 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"292 A","Channel Type":"N-CHANNEL","China RoHS C...

{"Product Category":"MOSFET","Series":"BSC059N04","Brand":"Infineon Technologies","Packaging":"Reel","Tradename":"OptiMOS","RoHS":"Details","Manufacturer":"Infineon"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"40 V","Typical Rise Time":"3.4 ns","Typical Turn-Off Delay Time":"23 ns","Description":"Value","Maximum Continuous Drain Current":"16 A","Package":"8TDSON EP","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"5.6 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"5.9@10V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"3.8 ns"}...