Datasheet.Directory

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"EXTREME SUPERMINI, 2-2N1A, ES6, 6 PIN","Terminal Form":"FLAT","Power Dissipation Ambient-Max":"0.1000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"80","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"250 MHz","Number of Elements":"2","Transistor Element Material":"SILICON","Ter...

{"Packaging":"Reel","Product Category":"Bipolar Transistors - Pre-Biased","Transistor Polarity":"NPN/PNP","Brand":"Toshiba","Pd - Power Dissipation":"100 mW","Mounting Style":"SMD/SMT","Collector- Emitter Voltage VCEO Max":"- 50 V, 50 V","Emitter- Base Voltage VEBO":"- 5 V, 5 V","Package / Case":"SOT-563","Typical Resistor Ratio":"0.0468","Manufacturer":"Toshiba","DC Collector/Base Gain hfe Min":"80","RoHS":"Details","Continuous Collector Current":"- 100 mA, 100 mA"}...

{"Continuous Collector Current":"100 mA","Emitter- Base Voltage VEBO":"5 V","Product Category":"Bipolar Transistors - Pre-Biased","Transistor Polarity":"NPN/PNP","Factory Pack Quantity":"4000","DC Collector/Base Gain hfe Min":"80","Pd - Power Dissipation":"100 mW","Mounting Style":"SMD/SMT","Collector- Emitter Voltage VCEO Max":"50 V","Packaging":"Reel","Peak DC Collector Current":"100 mA","Maximum Operating Frequency":"250 MHz (Typ)","Minimum Operating Temperature":"- 55 C","Package / Case":"ES-6","Typical...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"100mA","Product Photos":"SOT-563","Package / Case":"SOT-563, SOT-666","DC Current Gain (hFE) (Min) @ Ic, Vce":"80 @ 10mA, 5V","Frequency - Transition":"200MHz","Voltage - Collector Emitter Breakdown (Max)":"50V","Datasheets":"RN4905FE -","Resistor - Emitter Base (R2) (Ohms)":"47k","Standard Package":"4,000","Transistor Type":"1 NPN, 1 PNP - Pre-Biased (Dual)","Family":"Transistors (BJT) - Arrays, Pre-Biased","Vce Saturation (Max...