Product Datasheet Search Results:

RN2706JE.pdf8 Pages, 562 KB, Original
RN2706JE(TE85L,F).pdf1 Pages, 233 KB, Original
RN2706JE(TE85L,F)
Toshiba
Bipolar Transistors - Pre-Biased Gen Trans PNP x 2 ESV, -50V, -100A

Product Details Search Results:

Toshiba.co.jp/RN2706JE
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"EXTREME SUPERMINI, 2-2P1D, ESV, 5 PIN","Terminal Form":"FLAT","Power Dissipation Ambient-Max":"0.1000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"80","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"200 MHz","Number of Elements":"2","Transistor Element Material":"SILICON","Ter...
1503 Bytes - 07:56:09, 18 February 2025
Toshiba.co.jp/RN2706JE(TE85L,F)
{"Continuous Collector Current":"100 mA","Emitter- Base Voltage VEBO":"5 V","Product Category":"Bipolar Transistors - Pre-Biased","Transistor Polarity":"PNP","Factory Pack Quantity":"4000","DC Collector/Base Gain hfe Min":"80","Pd - Power Dissipation":"100 mW","Mounting Style":"SMD/SMT","Collector- Emitter Voltage VCEO Max":"50 V","Packaging":"Reel","Peak DC Collector Current":"100 mA","Maximum Operating Frequency":"200 MHz (Typ)","Minimum Operating Temperature":"- 55 C","Package / Case":"SMV-5","Typical Re...
1957 Bytes - 07:56:09, 18 February 2025
Toshiba.semicon-storage.com/RN2706JE(TE85L,F)
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"100mA","Mounting Type":"Surface Mount","Transistor Type":"2 PNP - Pre-Biased (Dual) (Emitter Coupled)","Product Photos":"SOT-553","Family":"Transistors (BJT) - Arrays, Pre-Biased","Resistor - Base (R1) (Ohms)":"4.7k","Series":"-","Vce Saturation (Max) @ Ib, Ic":"300mV @ 250\u00b5A, 5mA","Voltage - Collector Emitter Breakdown (Max)":"50V","Supplier Device Package":"ESV","Packaging":"Digi-Reel\u00ae","Resistor - Emitter Base (R2) ...
1845 Bytes - 07:56:09, 18 February 2025

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